All-optical mitigation of amplitude and phase-shift drift noise in semiconductor optical amplifiers

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)An all-optical scheme aimed at minimizing distortions induced by semiconductor optical amplifiers (SOAs) over modulated optical carriers is presented. The scheme employs an additional SOA properly biased to act as a saturated absorber, and thus counteract the distortions induced by the first amplifying device. The scheme here is demonstrated in silico, for 40 and 100 Gb/s (10 and 25 Gbaud, 16 QAM), with reasonable total gain (>20 dB) for symbol error rate below the forward error correction limit. (C) 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)An all-optical scheme aimed at minimizing distortions induced by semiconductor optical amplifiers (SOAs) over modulated optical carriers is presented. The scheme employs an additional SOA properly biased to act as a saturated absorber, and thus counteract5410CAPES - COORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL DE NÍVEL SUPERIORCNPQ - CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOFAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)FAPESP [2007/56024-4, 2015/50063-4]CNPq [CNPQ 574017/2008-9]sem informação574017/2008-92007/56024-4 ; 2015/50063-4The authors would like to thank CAPES (Coordination of Improvement of Higher Education Personnel), CNPq (National Council of Scientific and Technological Development), Espaço da Escrita-Coordenadoria Geralda Universidade-UNICAMP-for the language service

Frequency- and time-domain simulations of semiconductor optical amplifiers using equivalent circuit modeling

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)We propose an equivalent circuit modeling for a chip-on-carrier and for two encapsulated semiconductor optical amplifiers (SOAs). The models include main parasitic leaks and were used in reflection and transmission simulations, showing good agreement with experimental data. The model for each SOA is validated, comparing the simulated results with experimental data from SOAs operating as high-speed electro-optical switches, reaching rise times below 200 ps. (C) 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)We propose an equivalent circuit modeling for a chip-on-carrier and for two encapsulated semiconductor optical amplifiers (SOAs). The models include main parasitic leaks and were used in reflection and transmission simulations, showing good agreement with5411CAPES - COORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL DE NÍVEL SUPERIORCNPQ - CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOFAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)CNPq [574017/2008-9]FAPESP [2007/56024-4, 2005/51689-2]sem informação574017/2008-92007/56024-4 ; 2005/51689-2The authors thank Professor Adriano Toazza (UPF, RS/Brazil) for the software used to automate the EO transmission measurements. This work was supported in part by the Brazilian agencies CAPES and CNPq (scholarship), CNPq (under INCT-Fotonicom project, 57

Energy efficient switching technique for high-speed electro-optical semiconductor optical amplifiers

The analysis and performance of an efficient microwave coupler using asymmetrical impedance matching are introduced aiming high-speed electro-optical space switches employing a semiconductor optical amplifier (SOA). Through the reduction of the step matching resistor, its parasitic, and the optimization of the injected electrical switching signals, the proposed coupler was able to significantly reduce the SOA energy consumption while maintaining its ultrafast state transition with reduced transient behavior. Overall, the SOA-based switching action achieved guard times below 500 ps with overshoots close to 0% while operating with low bias currents and short pre-impulses, with a driver power close to 135 mW and energy consumption of 3.4 pJ/bit372460156024CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICO - CNPQFUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULO - FAPESP301409/2017-0; 301420/2015-7; 402923/2016-22017/20121-8; 2015/50063-4; 2015/24517-8; 2007/56024-

Comparison of electro-optical switching performances of dissimilar semiconductor optical amplifiers

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)The electro-optical switching performances of four semiconductor optical amplifiers are compared. Devices with distinct physical features, using different pulse formats for the current injection, were evaluated experimentally. The wide range of results might help in indicating preferable devices and pulse formats for a particular application. (c) 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:1500-1503, 2015The electro‐optical switching performances of four semiconductor optical amplifiers are compared. Devices with distinct physical features, using different pulse formats for the current injection, were evaluated experimentally. The wide range of results mi57615001503CAPES - COORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL DE NÍVEL SUPERIORCNPQ - CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOFAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)CNPq [574017/2008-9]FAPESP [2007/56024-4, 2005/51689-2]sem informação574017/2008-92007/56024-4 ; 2005/51689-2The authors thank to the Brazilian agencies CAPES (scholar-ship), CNPq (under INCT-Fotonicom project, 574017/2008-9),and FAPESP (under Padtec and CEPOF projects, 2007/56024-4and 2005/51689-2)

Optical Amplitude Modulation Extinction By A Deep Saturated Ultra-long Semiconductor Optical Amplifier.

The recovery of an optical carrier with the deletion of its amplitude modulation is introduced using a deeply saturated ultra-long semiconductor optical amplifier (UL-SOA). The experimental results were achieved for input signal bit rates up to 12.5 Gbps with high extinction ratio (up to 13.9 dB). The influence of parameters such as UL-SOA bias current, optical bandwidth, signal input power, modulation depth and bit rate are analyzed including the carrier spectral broadening effects due to the self-phase modulation effect.1827298-30

Coincidence Of Biophoton Emission By Wheat Seedlings During Simultaneous, Transcontinental Germination Tests.

Measurements of spontaneous ultra-weak light (biophoton) emission from native Brazilian and German wheat seedlings in three simultaneous series of germination tests are presented, two run in Germany and one in Brazil. Seedlings in both countries presented semi-circadian rhythms of emission that were in accordance with the local lunisolar gravimetric tidal acceleration, as did seeds which had been transported from Brazil to Germany. The simultaneity of the photon emission patterns in all tests argues for the lunisolar tide and its rhythmic variations as regulators of the natural rhythm of photon emission. However, seedlings from seed samples transported from Brazil to Germany showed, in addition, a temporary disturbance within the emission periodicity which may indicate a possible short-term acclimatization to the new location.250793-

Improvements Evaluation of High-Speed Electro-Optical Integrated Thin-Film Microwave Coupler SOA-based Space Switch

Abstract The speed and transient improvements due to a thin- film microwave coupler on a high-speed SOA-based space switch are analyzed. The switch performance is compared with another one using the same SOA device but in its commercial butterfly encapsulated form factor. Through an extensive experimental characterization and an automated algorithm analysis, the switching actions were evaluated in several SOA operational conditions (bias current, electrical pulse step amplitude, preimpulse amplitude, and switching technique) employing metrics related to the switching times and transient behavior intensity. The results showed that the thin-film coupler SOA switch mounting led to switching time improvements and quicker optical output pulse stabilization. In conjunction with the appropriated switching technique, the device could achieve switching speeds around 200 ps aiming its operation in high-speed optical networks