Site-selective adsorption of naphthalene-tetracarboxylic-dianhydride on Ag(110): First-principles calculations

The mechanism of adsorption of the 1,4,5,8-naphthalene-tetracarboxylic-dianhydride (NTCDA) molecule on the Ag(110) surface is elucidated on the basis of extensive density functional theory calculations. This molecule, together with its perylene counterpart, PTCDA, are archetype organic semiconductors investigated experimentally over the past 20 years. We find that the bonding of the molecule to the substrate is highly site-selective, being determined by electron transfer to the LUMO of the molecule and local electrostatic attraction between negatively charged carboxyl oxygens and positively charged silver atoms in [1-10] atomic rows. The adsorption energy in the most stable site is 0.9eV. A similar mechanism is expected to govern the adsorption of PTCDA on Ag(110) as well.Comment: 8 pages, 4 figures, high-quality figures available upon reques

The elevated Curie temperature and half-metallicity in the ferromagnetic semiconductor Lax_{x}Eu1−x_{1-x}O

Here we study the effect of La doping in EuO thin films using SQUID magnetometry, muon spin rotation ($\mu$SR), polarized neutron reflectivity (PNR), and density functional theory (DFT). The $\mu$SR data shows that the La$_{0.15}$Eu$_{0.85}$O is homogeneously magnetically ordered up to its elevated $T_{\rm C}$. It is concluded that bound magnetic polaron behavior does not explain the increase in $T_{\rm C}$ and an RKKY-like interaction is consistent with the $\mu$SR data. The estimation of the magnetic moment by DFT simulations concurs with the results obtained by PNR, showing a reduction of the magnetic moment per La$_{x}$Eu$_{1-x}$O for increasing lanthanum doping. This reduction of the magnetic moment is explained by the reduction of the number of Eu-4$f$ electrons present in all the magnetic interactions in EuO films. Finally, we show that an upwards shift of the Fermi energy with La or Gd doping gives rise to half-metallicity for doping levels as high as 3.2 %.Comment: 7 pages, 11 figure

C-Field Methods for Non-Equilibrium Bose Gases

We review c-field methods for simulating the non-equilibrium dynamics of degenerate Bose gases beyond the mean-field Gross-Pitaevskii approximation. We describe three separate approaches that utilise similar numerical methods, but have distinct regimes of validity. Systems at finite temperature can be treated with either the closed-system projected Gross-Pitaevskii equation (PGPE), or the open-system stochastic projected Gross-Pitaevskii equation (SPGPE). These are both applicable in quantum degenerate regimes in which thermal fluctuations are significant. At low or zero temperature, the truncated Wigner projected Gross-Pitaevskii equation (TWPGPE) allows for the simulation of systems in which spontaneous collision processes seeded by quantum fluctuations are important. We describe the regimes of validity of each of these methods, and discuss their relationships to one another, and to other simulation techniques for the dynamics of Bose gases. The utility of the SPGPE formalism in modelling non-equilibrium Bose gases is illustrated by its application to the dynamics of spontaneous vortex formation in the growth of a Bose-Einstein condensate.Comment: 7 pages, 1 figure. Unedited version of chapter to appear in Quantum Gases: Finite Temperature and Non-Equilibrium Dynamics (Vol. 1 Cold Atoms Series). N.P. Proukakis, S.A. Gardiner, M.J. Davis and M.H. Szymanska, eds. Imperial College Press, London (in press). See http://www.icpress.co.uk/physics/p817.html v2: Added arXiv cross-reference

Variational quantum chemistry requires gate-error probabilities below the fault-tolerance threshold

The variational quantum eigensolver (VQE) is a leading contender for useful quantum advantage in the NISQ era. The interplay between quantum processors and classical optimisers is believed to make the VQE noise resilient. Here, we probe this hypothesis. We use full density-matrix simulations to rank the noise resilience of leading gate-based VQE algorithms in ground-state computations on a range of molecules. We find that, in the presence of noise: (i) ADAPT-VQEs that construct ansatz circuits iteratively outperform VQEs that use "fixed" ansatz circuits; and (ii) ADAPT-VQEs perform better when circuits are constructed from gate-efficient elements rather than physically-motivated ones. Our results show that, for a wide range of molecules, even the best-performing VQE algorithms require gate-error probabilities on the order of $10^{-6}$ to $10^{-4}$ to reach chemical accuracy. This is significantly below the fault-tolerance thresholds of most error-correction protocols. Further, we estimate that the maximum allowed gate-error probability scales inversely with the number of noisy (two-qubit) gates. Our results indicate that useful chemistry calculations with current gate-based VQEs are unlikely to be successful on near-term hardware without error correction.Comment: 17 pages, 8 figure