A QUEST FOR MĀ’OHI LITERATURE AND MĀ’OHI IDENTITY IN TITAUA PEU’S REPRESENTATIONS OF FRANCE IN MUTISMES AND PINA

M.A

Gunn domain existence in the channel of a saturated GaAs MESFET

The existence of a Gunn domain in the channel of a GaAs MESFET after saturation is confirmed through numerical bidimensional simulation, but the i D vs. VDS decrease is not observed. It is shown that in devices including an interfacial space charge layer, the accumulation bump of the domain is responsible for an opening of the channel by which the leakage current is flowing

Gunn domain existence in the channel of a saturated GaAs MESFET

The existence of a Gunn domain in the channel of a GaAs MESFET after saturation is confirmed through numerical bidimensional simulation, but the i D vs. VDS decrease is not observed. It is shown that in devices including an interfacial space charge layer, the accumulation bump of the domain is responsible for an opening of the channel by which the leakage current is flowing.L'existence d'un domaine de Gunn dans le canal d'un MESFET GaAs après saturation est confirmée par une simulation numérique bidimensionnelle, mais son apparition ne produit pas de décroissance du courant de drain. On montre que dans les dispositifs comportant une zone de charge d'espace à l'interface entre couche et substrat la zone d'accumulation du domaine provoque un élargissement du canal responsable de la circulation d'un courant excédentaire, sans que le substrat soit sollicité