Air, the making of

Nous essayons de surprendre D’Alembert au travail lorsqu’il rédige un article de l’Encyclopédie dans une matière qui n’est pas directement de sa spécialité. Nous allons aussi voircomment les articles de la Cyclopædia de Chambers sont utilisés, transformés (de façondifférente selon l’avancée des volumes de l’Encyclopédie). Nous abordons le découpagede l’article AIR, l’intervention de Formey, les passages tirés de Musschenbroeck et lesautres. Nous verrons que D’Alembert est à la fois absent et présent dans son articlejustifiant une signature (O) pour un texte venu d’ailleurs.The making of AIR (O)This article tries to catch D’Alembert in the act of working on an Encyclopédie article on a subject that is not directly his speciality.We look at how Chambers’s Cyclopaedia articles are used and transformed (in different ways as the Encyclopédie volumes progress), by studying the way AIR is divided up, Formey’s interventions and the passages from Musschenbroeck and others. We see that D’Alembert is both absent and present in his articles, thus justifying a signature (0) at the end of a text taken from elsewhere

Characterization of the activation of yttrium-based getter films by electrical measurements and ion-beam analyses

International audienceGettering properties of thin films of pure yttrium and yttrium-based alloys have been studied for application to MEMS vacuum packaging at the wafer level. Thin films of Y, Zr-Y, Ti-Y and V-Y were co-evaporated under ultra-high vacuum. It is demonstrated that the sheet resistance measured by 4-probes technique before and after activation at 250°C gives a good estimation of the oxygen sorption ability determined by NRA. Pure yttrium has been found to be highly reactive after deposition (sheet resistance increases by 40% after 1 month in air) but poorly efficient in oxygen trapping after activation. Conversely, the sorption ability of Y-V, Y-Zr and Y-Ti alloys is extremely high and increases with the yttrium content in the film. The bests results for sorption are obtained with Y-V (2.7 10 22 atom/cm 3 for Y44V56)

In situ electrical characterization of YxTiy getter thin films during thermal activation

International audienceTransition metals alloys are the most studied getter films for wafer-level vacuum packaging of MEMS. In this work we investigated yttrium and Y x Ti y alloys films that could possibly overcome the limitations of usual getter materials, i.e. reversible sorption of hydrogen and low sorption ability for hydrocarbon gases. As a preliminary step towards this objective, properties of (co-)evaporated yttrium and Y x Ti y films were analyzed by SEM, EDS, XPS and in-situ sheet resistance measurements before, after and/or during annealing in vacuum. As deposited and annealed films have a small grain size and a columnar structure. It is shown that yttrium and Y x Ti y films can be activated after 1 hour of annealing in vacuum at 250 °C if the Y-content is larger than ~9 %. These results are promising for the use of Y-based films as low temperature getters for vacuum packaging

Conclusion

L’histoire partagée entre le Québec et la France du XVIe au XVIIIe siècle, celle de la Nouvelle-France, a laissé aux générations actuelles un héritage considérable et d’une grande diversité, inscrit pour une partie dans les paysages laurentien et picto-charentais

Introduction

Parmi les nations qui ont pris part à l’expansion européenne dans les Nouveaux Mondes entre les XVIe et XIXe siècles, l’Angleterre, l’Espagne et la France se sont engagées en Amérique du Nord davantage que les autres

Introduction

Parmi les nations qui ont pris part à l’expansion européenne dans les Nouveaux Mondes entre les XVIe et XIXe siècles, l’Angleterre, l’Espagne et la France se sont engagées en Amérique du Nord davantage que les autres

Conclusion

L’histoire partagée entre le Québec et la France du XVIe au XVIIIe siècle, celle de la Nouvelle-France, a laissé aux générations actuelles un héritage considérable et d’une grande diversité, inscrit pour une partie dans les paysages laurentien et picto-charentais

A Comparison of TSV Etch Metrology Techniques

International audienceWe use three metrology techniques, vertical scanning interferometry (VSI), confocal chromatic microscopy (CCM), and time domain optical coherence tomography (TD-OCT), for depth measurement of through-silicon vias (TSVs) of various cross sections and depths. The merits of these techniques are discussed and compared. Introduction While sales of semiconductor equipment broke a new record this year, many metrology needs should be addressed to support the development and production of electronic chips based on "More than Moore" scaling. Among these scaling approaches, 3D integration based on TSVs offers superior integration density and reduces interconnect length/latency. Measurements are needed to evaluate the depth uniformity of etched TSVs. Indeed, upon metal filling, geometrical variations of TSVs can affect Cu nails coplanarity and can warp the wafer, resulting in a low stacking yield. Measuring the depth of TSVs is an increasingly challenging task as the diameter of many TSVs has now shrunk to only a few microns