764 research outputs found

    Physiopathological rationale of using high-flow nasal therapy in the acute and chronic setting: A narrative review

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    Chronic lung disease and admissions due to acute respiratory failure (ARF) are becoming increasingly common. Consequently, there is a growing focus on optimizing respiratory support, particularly non-invasive respiratory support, to manage these conditions. High flow nasal therapy (HFNT) is a noninvasive technique where humidified and heated gas is delivered through the nose to the airways via small dedicated nasal prongs at flows that are higher than the rates usually applied during conventional oxygen therapy. HFNT enables to deliver different inspired oxygen fractions ranging from 0.21 to 1. Despite having only recently become available, the use of HFNT in the adult population is quite widespread in several clinical settings. The respiratory effects of HNFT in patients with respiratory failure may be particularly relevant for clinicians. In this narrative review, we discuss the main pathophysiological mechanism and rationale for using HFNT in the acute and chronic setting

    Length of remdesivir treatment in patients with severe covid-19

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    In severe COVID-19, a 5-day remdesivir regimen seems as effective as a 10-day course of treatment and it may be safer. To date, the drug has no clearly proven efficacy over time

    Inclusion of predatory journals in Scopus is inflating scholars’ metrics and advancing careers

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    Copper (Cu) interconnect lines are widely used in advanced, high-density integrated circuits (ICs), large-area flat panel displays, and many nano and microelectronic and optoelectronic products. Compared with aluminum (Al), Cu has many advantages, such as the higher conductivity and longer lifetime. However, Cu is difficult to etch into fine lines using the conventional plasma etching method because the reaction product is nonvolatile. Another problem of Cu interconnect lines is that it has poor adhesion to the dielectric film unless an adhesion layer is used. Recently, Kuo’s group solved the etching problem with a novel room-temperature process that consumes the Cu thin film with a plasma reaction and then removes the reaction product with a liquid solution. This method has been used in the fabrication of ICs and TFT LCDs. One of the most critical issues in applying Cu lines in products is the reliability – electromigration (EM) lifetime prediction. As the IC keeps shrinking, the geometry effect on the lifetime of the thin Cu line is important especially for advanced products. Previously, Kuo’s group had studied temperature and mechanical bending effects on the Cu fine line’s lifetime. Geometry effects on the lifetime of the Al or Al-Cu alloy line have also been discussed before. However, there are few reports on the geometry effect on the Cu fine line prepared by the plasma-based etch process. In this research, the author investigated the relationship between the Cu line width or length and the EM failure time. The change of the line resistance with the stress time has also been studied. The capping layer effect is very important in multi-layer devices. There were some research studies on Cu capping layer before, i.e., Ag layer to protect Cu oxidation and SiN layer as interlayer dielectrics. However, few studies had been done on the TiW capping layer effect on plasma etched Cu lines. In this study, the TiW capping layer effect on lifetime has been studied
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