2 research outputs found
Transparent Conductive Oxide Nanocrystals Coated with Insulators by Atomic Layer Deposition
Thin
films comprised of transparent conductive oxide (TCO) nanocrystals
are attractive for a number of optoelectronic applications. However,
it is often observed that the conductivity of such films is very low
when they are in contact with air. It has recently been demonstrated,
somewhat surprisingly, that filling in initially insulating films
comprised of TCO nanocrystals with another insulator by atomic layer
deposition (ALD) dramatically increases the conductivity by many orders
of magnitude. This work aims to elucidate the mechanism by which the
ALD coating increases conductivity. We examined the effect of removing
two adsorbed oxygen species (physisorbed molecular water and chemisorbed
hydroxide) on sheet resistance and compared this result to the results
with thin films comprised of ZnO nanocrystals coated with Al<sub>2</sub>O<sub>3</sub> and also HfO<sub>2</sub> by ALD. Although both insulating
infills decrease the sheet resistance and increase the stability of
the films, there is a stark discrepancy between the two. From the <i>in situ</i> measurements, it was found that coating with Al<sub>2</sub>O<sub>3</sub> removes both physisorbed water and chemisorbed
hydroxide, resulting in a net reduction of the ZnO nanocrystals. Coating
with HfO<sub>2</sub> removes only physisorbed water, which was confirmed
by Fourier transform infrared spectroscopy. A similar phenomenon was
observed when thin films comprised of Sn-doped In<sub>2</sub>O<sub>3</sub> nanocrystals were coated, suggesting Al<sub>2</sub>O<sub>3</sub> can be used to reduce and stabilize metal oxide nanocrystals
in general
Electrochemically Induced Transformations of Vanadium Dioxide Nanocrystals
Vanadium dioxide (VO<sub>2</sub>)
undergoes significant optical, electronic, and structural changes
as it transforms between the low-temperature monoclinic and high-temperature
rutile phases. Recently, alternative stimuli have been utilized to
trigger insulator-to-metal transformations in VO<sub>2</sub>, including
electrochemical gating. Here, we prepare and electrochemically reduce
mesoporous films of VO<sub>2</sub> nanocrystals, prepared from colloidally
synthesized V<sub>2</sub>O<sub>3</sub> nanocrystals that have been
oxidatively annealed, in a three-electrode electrochemical cell. We
observe a reversible transition between infrared transparent insulating
phases and a darkened metallic phase by in situ visible–near-infrared
spectroelectrochemistry and correlate these observations with structural
and electronic changes monitored by X-ray absorption spectroscopy,
X-ray diffraction, Raman spectroscopy, and conductivity measurements.
An unexpected reversible transition from conductive, reduced monoclinic
VO<sub>2</sub> to an infrared-transparent insulating phase upon progressive
electrochemical reduction is observed. This insulator–metal–insulator
transition has not been reported in previous studies of electrochemically
gated epitaxial VO<sub>2</sub> films and is attributed to improved
oxygen vacancy formation kinetics and diffusion due to the mesoporous
nanocrystal film structure