72 research outputs found
Radiation damage to semiconductors by high energy electrons Final progress report, 15 Mar. 1967 - 15 Mar. 1968
Radiation damage to silicon and germanium semiconductors by high energy electron
Radiation damage to semiconductors by high- energy electron and proton radiation Progress report, 15 Sep. 1965 - 15 Mar. 1966
Semiconductor radiation damage from high-energy electron and proton radiatio
Investigation of the structure of radiation damage in lithium diffused solar cells Progress report, 3 Feb. - 30 Jun. 1969
Damage structure due to 1 to 5 MeV electron irradiation studied in lithium diffused silicon for solar cell
Optical studies of the lithium defect complex in irradiated silicon Progress report, 15 Jun. 1967 - 15 Mar. 1968
Optical studies of lithium defect complex in irradiated silico
Radiation-induced photoconductivity of silicon
Photoconductivity method for measuring effects of radiation induced defects in n-type silico
Investigation of the structure of radiation damage in lithium diffused silicon Midway progress report, 1 Jan. - 1 Jun. 1970
Instrumentation and methods for study of radiation damage in lithium diffused silicon using infrared photoconductivity and spectroscopy as probe
Investigation of the structure of radiation damage in lithium-diffused silicon Final report, 3 Feb. - 8 Dec. 1969
Effects of electron irradiation on lithium-doped silico
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The Effects of Reactor Irradiation on the Thermoelectric Properties of Lead and Bismuth Tellurides
Commercially available specimens of polycrystalline nand p-type lead telluride and n- and p-type bismuth telluride were irradiated in the Engineering Test Reactor. Total integrated flux times of 1.5 x 10/sup 20/ neutrons/cm/sup 2/ (thermal) and 1.6 x 10/sup 19/ neutrons/cm/sup 2/ (fast, i.e., for neutrons having energies greater than 1 (Mev) were accumulated by the specimens during irradiation. The specimen temperature during irradiation was 60 plus or minus 20 deg C. The effects of the irradiation on the thermoelectrical properties of these materials were found to be due almost entirely to fast neutrons insofar as most of the damage is healed during heat treatment. Increases in the electrical resistivity for irradiated n type PbTe and Bi/sub 2/Te/sub 3/ were found to anneal at temperatures below 200 deg C. Measurements of the electrical resistivity and Seebeck coefficient as a function of temperature for irradiated and unirradiated samples cut from the same ingot are given for all materials except p type PbTe. For the latter sample only the measurements of the Seebeck coefficient are given. (auth
Influence of canopy fruit location on morphological, histochemical and biochemical changes in two oil olive cultivars
The influence of different irradiance conditions was evaluated under natural solar radiation by comparing well-exposed (in) and shaded fruit (out) in canopies of olive trees (Olea europaea L). Over a 2-year period, from 50 days after full bloom up to harvest time, “in” and “out” olive samples of two genotypes (“Frantoio Millennio” and “Coratina 5/19”) were periodically collected. Morphological, histochemical, and biochemical analysis were performed to study the changes on fruit morphometric traits, oil body accumulation, and b-glucosidase enzyme activity. Some parameters were modified by shading inside the canopy in which the proportion of incident photosynthetically active radiation intercepted by the crop was 47%. Shaded fruits developed at slow rate and were characterized by late darkgoing time, reduced size, with a tendency toward oblong shape. The rapid histochemical procedure proposed to estimate the oil body accumulation during fruit ripening showed that a reduced irradiance caused a decrease in oil body density. The canopy position influenced, in a different way, the b-glucosidase activity in relation to the fruit-ripening stage in both genotypes. These findings indicate that providing an adequate and uniform lighting of the olive canopy by careful choices of orchard management practices can be a key factor for several yield components
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