High-Quality Planar high-Tc Josephson Junctions

Reproducible high-Tc Josephson junctions have been made in a rather simple two-step process using ion irradiation. A microbridge (1 to 5 ?m wide) is firstly designed by ion irradiating a c-axis-oriented YBa2Cu3O7-? film through a gold mask such as the non-protected part becomes insulating. A lower Tc part is then defined within the bridge by irradiating with a much lower fluence through a narrow slit (20 nm) opened in a standard electronic photoresist. These planar junctions, whose settings can be finely tuned, exhibit reproducible and nearly ideal Josephson characteristics. This process can be used to produce complex Josephson circuits.Comment: 4 pages, 5 figures, to be published in Applied Physics Letter

Study and optimization of ion-irradiated High-Tc Josephson nanoJunctions by Monte Carlo simulations

High Tc Josephson nanoJunctions (HTc JnJ) made by ion irradiation have remarkable properties for technological applications. However, the spread in their electrical characteristics increases with the ion dose. We present a simple model to explain the JnJ inhomogeneities, which accounts quantitatively for experimental data. The spread in the slit's width of the irradiation mask is the limiting factor.Monte Carlo simulations have been performed using different irradiation conditions to study their influence on the spread of the JnJ charcateristics. A "universal" behavior has been evidenced, which allows to propose new strategies to optimize JnJ reproducibility.Comment: 14 pages, 6 Figures. accepted in Journal of Applied Physic

Spin-polarized tunneling spectroscopy in tunnel junctions with half-metallic electrodes

We have studied the magnetoresistance (TMR) of tunnel junctions with electrodes of La2/3Sr1/3MnO3 and we show how the variation of the conductance and TMR with the bias voltage can be exploited to obtain a precise information on the spin and energy dependence of the density of states. Our analysis leads to a quantitative description of the band structure of La2/3Sr1/3MnO3 and allows the determination of the gap delta between the Fermi level and the bottom of the t2g minority spin band, in good agreement with data from spin-polarized inverse photoemission experiments. This shows the potential of magnetic tunnel junctions with half-metallic electrodes for spin-resolved spectroscopic studies.Comment: To appear in Physical Review Letter

Phase Separation and the Phase Diagram in Cuprates Superconductors

We show that the main features of the cuprates superconductors phase diagram can be derived considering the disorder as a key property of these materials. Our basic point is that the high pseudogap line is an onset of phase separation which generates compounds made up of regions with distinct doping levels. We calculate how this continuous temperature dependent phase separation process occurs in high critical temperature superconductors (HTSC) using the Cahn-Hilliard approach, originally applied to study alloys. Since the level of phase separation varies for different cuprates, it is possible that different systems with average doping level pm exhibit different degrees of charge and spin segregation. Calculations on inhomogeneous charge distributions in form of stripes in finite clusters performed by the Bogoliubov-deGennes superconducting approach yield good agreement to the pseudogap temperature T*(pm), the onset of local pairing amplitudes with phase locked and concomitantly, how they develop at low temperatures into the superconducting phase at Tc(pm) by percolation.Comment: 9 pages, 9 figures. Submitted to Phys. Rev.

Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments

We have performed magnetotransport measurements on La2/3Sr1/3MnO3 / SrTiO3 / La2/3Sr1/3MnO3 magnetic tunnel junctions. A magnetoresistance ratio of more than 1800 % is obtained at 4K, from which we infer an electrode spin polarization of at least 95 %. This result strongly underscores the half-metallic nature of mixed-valence manganites and demonstrates its capability as a spin analyzer. The magnetoresistance extends up to temperatures of more than 270K. We argue that these improvements over most previous works may result from optimizing the patterning process for oxide heterostructures.Comment: to appear in Applied Physics Letter

Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization

We report on tunneling magnetoresistance (TMR) experiments that demonstrate the existence of a significant spin polarization in Co-doped (La,Sr)TiO3-d (Co-LSTO), a ferromagnetic diluted magnetic oxide system (DMOS) with high Curie temperature. These TMR experiments have been performed on magnetic tunnel junctions associating Co-LSTO and Co electrodes. Extensive structural analysis of Co-LSTO combining high-resolution transmission electron microscopy and Auger electron spectroscopy excluded the presence of Co clusters in the Co-LSTO layer and thus, the measured ferromagnetism and high spin polarization are intrinsic properties of this DMOS. Our results argue for the DMOS approach with complex oxide materials in spintronics

Conductivity of underdoped YBa2Cu3O7-d : evidence for incoherent pair correlations in the pseudogap regime

Conductivity due to superconducting fluctuations studied in optimally doped YBa2Cu3O7-d films displays a stronger decay law in temperature than explainable by theory. A formula is proposed, which fits the data very well with two superconductive parameters, Tc and the coherence length ksi_c0, and an energy scale Delta*. This is also valid in underdoped materials and enables to describe the conductivity up to 300 K with a single-particle excitations channel in parallel with a channel whose contribution is controlled by ksi_c0, Tc and Delta*. This allows to address the nature of the pseudogap in favour of incoherent pairing.Comment: 14 pages, 4 figures, 1 tabl

Spin-dependent tunneling through high-k LaAlO3

We report on the use of the LaAlO3 (LAO) high-k dielectric as a tunnel barrier in magnetic tunnel junctions. From tunnel magnetoresistance (TMR) measurements on epitaxial La2/3Sr1/3MnO3/LAO/La2/3Sr1/3MnO3 junctions, we estimate a spin polarization of 77% at low temperature for the La2/3Sr1/3MnO3/LAO interface. Remarkably, the TMR of La2/3Sr1/3MnO3/LAO/Co junctions at low bias is negative, evidencing a negative spin polarization of Co at the interface with LAO, and its bias dependence is very similar to that of La2/3Sr1/3MnO3/STO/Co junctions. We discuss possible reasons for this behaviour.Comment: 14 pages, 3 figure

Full oxide heterostructure combining a high-Tc diluted ferromagnet with a high-mobility conductor

We report on the growth of heterostructures composed of layers of the high-Curie temperature ferromagnet Co-doped (La,Sr)TiO3 (Co-LSTO) with high-mobility SrTiO3 (STO) substrates processed at low oxygen pressure. While perpendicular spin-dependent transport measurements in STO//Co-LSTO/LAO/Co tunnel junctions demonstrate the existence of a large spin polarization in Co-LSTO, planar magnetotransport experiments on STO//Co-LSTO samples evidence electronic mobilities as high as 10000 cm2/Vs at T = 10 K. At high enough applied fields and low enough temperatures (H < 60 kOe, T < 4 K) Shubnikov-de Haas oscillations are also observed. We present an extensive analysis of these quantum oscillations and relate them with the electronic properties of STO, for which we find large scattering rates up to ~ 10 ps. Thus, this work opens up the possibility to inject a spin-polarized current from a high-Curie temperature diluted oxide into an isostructural system with high-mobility and a large spin diffusion length.Comment: to appear in Phys. Rev.