Electrical Characterization of Discrete Defects and Impact of Defect Density on Photoluminescence in Monolayer WS₂

Transition-metal dichalcogenides (TMDs) are an exciting class of 2D materials that exhibit many promising electronic and optoelectronic properties with potential for future device applications. The properties of TMDs are expected to be strongly influenced by a variety of defects which result from growth procedures and/or fabrication. Despite the importance of understanding defect-related phenomena, there remains a need for quantitative nanometer-scale characterization of defects over large areas in order to understand the relationship between defects and observed properties, such as photoluminescence (PL) and electrical conductivity. In this work, we present conductive atomic force microscopy measurements which reveal nanometer-scale electronically active defects in chemical vapor deposition-grown WS₂ monolayers with defect density varying from 2.3 × 10¹⁰ cm^–2 to 4.5 × 10¹¹ cm^–2. Comparing these defect density measurements with PL measurements across large areas (>20 μm distances) reveals a strong inverse relationship between WS₂ PL intensity and defect density. We propose a model in which the observed electronically active defects serve as nonradiative recombination centers and obtain good agreement between the experiments and model

Magnetic Field-Induced Spin Nematic Phase Up to Room Temperature in Epitaxial Antiferromagnetic FeTe Thin Films Grown by Molecular Beam Epitaxy

Electronic nematicity, where strong correlations drive electrons to align in a way that lowers the crystal symmetry, is ubiquitous among unconventional superconductors. Understanding the interplay of such a nematic state with other electronic phases underpins the complex behavior of these materials and the potential for tuning their properties through external stimuli. Here, we report magnetic field-induced spin nematicity in a model system tetragonal FeTe, the parent compound of iron chalcogenide superconductors, which exhibits a bicollinear antiferromagnetic order. The studies were conducted on epitaxial FeTe thin films grown on SrTiO3(001) substrates by molecular beam epitaxy, where the bicollinear antiferromagnetic order was confirmed by in situ atomic resolution scanning tunneling microscopy imaging. A 2-fold anisotropy is observed in in-plane angle-dependent magnetoresistance measurements, indicative of magnetic field-induced nematicity. Such 2-fold anisotropy persists up to 300 K, well-above the bicollinear antiferromagnetic ordering temperature of 75 K, indicating a magnetic field-induced spin nematic phase up to room temperature in the antiferromagnet FeTe