Table 1.

Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • High efficiency due to low switching and conduction losses • Suitable for standard level gate drive source

Dynamic characteristics

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits � Low conduction losses due to low on-state resistance � Suitable for high frequency applications due to fast switching characteristics 1.3 Application

Static characteristics

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for clamping, ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits � Allows responsive temperature monitoring due to integrated temperature sensor � Low conduction losses due to low on-state resistance � Q101 compliant 1.3 Applications � 12 V and 24 V high power motor drives � Automotive and general purpose power switchin

Table 1. Quick reference data

Planar passivated high commutation three quadrant triac in a SOT78 plastic package. The "series ET " triac balances the requirements of commutation performance and gate sensitivity. The "sensitive gate " "series ET " is intended for interfacing with low power drivers including microcontrollers where "high junction operating temperature " capability is required. 1.2 Features and benefits � 3Q technology for improved noise immunity � Direct interfacing with low power drivers and microcontrollers � Good immunity to false turn-on by dV/dt � High commutation capability with sensitive gate � High junction operating temperature capability � High voltage capability � Planar passivated for voltage ruggedness and reliability � Triggering in three quadrants only 1.3 Applications � Applications subject to high temperature � Electronic thermostats (heating and cooling) � High power motor controls e.g. washing machines and vacuum cleaners � Refrigeration and air-conditioner compressor controls 1.4 Quick reference dat

Electronic fuse Hot swap Load switch Soft start

1. General description Standard level N-channel MOSFET in a LFPAK56 package qualified to 175 °C. Part of NXP's "NextPower Live " portfolio, the PSMN013-100YSE complements the latest "hotswap" controllers- robust enough to withstand substantial inrush currents during turn on, whilst offering a low R DS(on) characteristic to keep temperatures down and efficiency up in continued use. Ideal for telecommunication systems based on a 48 V backplane / supply rail. 2. Features and benefits • Enhanced forward biased safe operating area for superior linear mode operation • Very low RDS(on) for low conduction losse

PINNING PIN SYMBOL DESCRIPTION

� High forward transfer admittance � Short channel transistor with high forward transfer admittance to input capacitance ratio � Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS � VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment. DESCRIPTION Depletion type field-effect transistor in a plastic microminiature SOT343R package with source and substrate interconnected. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling

Symbol Parameter Conditions Min Typ Max Unit

Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits � Advanced TrenchMOS provides low RDSon and low gate charge � High efficiency gains in switching power converters � Improved mechanical and thermal characteristics � LFPAK provides maximum power density in a Power SO8 package 1.3 Applications � DC-to-DC convertors � Lithium-ion battery protection � Load switching � Motor control � Server power supplies 1.4 Quick reference dat

Table 1.

Standard level N-channel MOSFET in I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic power supply equipment. 2. Features and benefits • High efficiency due to low switching and conduction losses • Improved dynamic avalanche performance • Suitable for standard level gate drive • I2PAK package for slimline adaptors & height constrained application

Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA

P-channel enhancement mode vertical D-MOS transistor Product specificatio