Damage profiles of ultrashallow B implants in Si and the Kinchin-Pease relationship

Damage distributions resulting from 0.1-2 keV B+ implantation at room temperature into Si(100) to doses ranging from 1×1014 to 2×1016 cm-2 have been determined using high-depth-resolution medium-energy-ion scattering in the double alignment mode. For all B+ doses and energies investigated a 3-4 nm deep, near-surface damage peak was observed while for energies at and above 1 keV, a second damage peak developed beyond the mean projected B+ ion range of 5.3 nm. This dual damage peak structure is due to dynamic annealing processes. For the near-surface peak it is observed that, at the lowest implant energies and doses used, for which recombination processes are suppressed due to the proximity of the surface capturing interstitials, the value of the damage production yield for low-mass B+ ions is equal or greater than the modified Kinchin-Pease model predictions [G. H. Kinchin and R. S. Pease, Rep. Prog. Phys. 18, 1 (1955); G. H. Kinchin and R. S. Pease, J. Nucl. Energy 1, 200 (1955); P. Sigmund, Appl. Phys. Lett. 14, 114 (1969)]

Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink

Preamorphization of ultrashallow implanted boron in silicon on insulator is optimized to produce an abrupt boxlike doping profile with negligible electrical deactivation and significantly reduced transient enhanced diffusion. The effect is achieved by positioning the as-implanted amorphous/crystalline interface close to the buried oxide interface to minimize interstitials while leaving a single-crystal seed to support solid-phase epitaxy. Results support the idea that the interface between the Si overlayer and the buried oxide is an efficient interstitial sink

The CCR4-NOT Complex Physically and Functionally Interacts with TRAMP and the Nuclear Exosome

BACKGROUND: Ccr4-Not is a highly conserved multi-protein complex consisting in yeast of 9 subunits, including Not5 and the major yeast deadenylase Ccr4. It has been connected functionally in the nucleus to transcription by RNA polymerase II and in the cytoplasm to mRNA degradation. However, there has been no evidence so far that this complex is important for RNA degradation in the nucleus. METHODOLOGY/PRINCIPAL FINDINGS: In this work we point to a new role for the Ccr4-Not complex in nuclear RNA metabolism. We determine the importance of the Ccr4-Not complex for the levels of non-coding nuclear RNAs, such as mis-processed and polyadenylated snoRNAs, whose turnover depends upon the nuclear exosome and TRAMP. Consistently, mutation of both the Ccr4-Not complex and the nuclear exosome results in synthetic slow growth phenotypes. We demonstrate physical interactions between the Ccr4-Not complex and the exosome. First, Not5 co-purifies with the exosome. Second, several exosome subunits co-purify with the Ccr4-Not complex. Third, the Ccr4-Not complex is important for the integrity of large exosome-containing complexes. Finally, we reveal a connection between the Ccr4-Not complex and TRAMP through the association of the Mtr4 helicase with the Ccr4-Not complex and the importance of specific subunits of Ccr4-Not for the association of Mtr4 with the nuclear exosome subunit Rrp6. CONCLUSIONS/SIGNIFICANCE: We propose a model in which the Ccr4-Not complex may provide a platform contributing to dynamic interactions between the nuclear exosome and its co-factor TRAMP. Our findings connect for the first time the different players involved in nuclear and cytoplasmic RNA degradation

Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si∕SiO2 interface

The fabrication of preamorphized p-type ultrashallow junctions in silicon-on-insulator (SOI) has been investigated. Electrical and structural measurements after annealing show that boron deactivation and transient enhanced diffusion are reduced in SOI compared to bulk wafers. The reduction is strongest when the end-of-range defects of the preamorphizing implant are located deep within the silicon overlayer of the SOI silicon substrate. Results reveal a very substantial increase in the dissolution rate of the end-of-range defect band. A key player in this effect is the buried Si/SiO2 interface, which acts as an efficient sink for interstitials competing with the silicon surface.</p

Analysis of Resonant Inelastic X-Ray Scattering in Stripe-Ordered Nickelate

We analyze theoretically the resonant inelastic x-ray scattering (RIXS) at the Ni K edge in the stripe-ordered state of La_{2-x}Sr_xNiO_4 at x=1/3. In the calculation of RIXS spectra, the stripe-ordered ground state is described within the Hartree-Fock approximation by using a realistic tight-binding model for Ni3d\gamma and O2p_{x, y} orbitals, and the electron correlations in the electronic excitation processes are taken into account within the random-phase approximation. The calculated RIXS spectrum shows a tail toward the low-energy region when the momentum transfer of photons equals the stripe vector Q, being consistent with a recent experimental result. The origin of this anomalous momentum dependence of RIXS spectra is discussed microscopically.Comment: 23 pages, 9 figures. Published version in J. Phys. Soc. Jp

Analysis of Incident-Photon-Energy and Polarization Dependent Resonant Inelastic X-Ray Scattering from La2_{2}CuO4_{4}

We present a detailed analysis of the incident-photon-energy and polarization dependences of the resonant inelastic x-ray scattering (RIXS) spectra at the Cu $K$ edge in La$_{2}$CuO$_{4}$. Our analysis is based on the formula developed by Nomura and Igarashi, which describes the spectra by a product of an incident-photon-dependent factor and a density-density correlation function for 3d states. We calculate the former factor using the $4p$ density of states from an ab initio band structure calculation and the latter using a multiorbital tight-binding model within the Hartree-Fock approximation and the random phase approximation. We obtain spectra with rich structures in the energy-loss range 2-5 eV, which vary with varying momentum and incident-photon energy, in semi-quantitative agreement with recent experiments. We clarify the origin of such changes as a combined effect of the incident-photon-dependent factor and the density-density correlation function.Comment: 18 pages, 10 figures, accepted to JPSJ; Wrong e-mail address and present address remove

Adaptive evolution of drug targets in producer and non-producer organisms

Mycophenolic acid (MPA) is an immunosuppressive drug produced by several fungi in Penicillium subgenus Penicillium. This toxic metabolite is an inhibitor of IMP dehydrogenase (IMPDH). The MPA biosynthetic cluster of P. brevicompactum contains a gene encoding a B-type IMPDH, IMPDH-B, which confers MPA-resistance. Surprisingly, all members of subgenus Penicillium contain genes encoding IMPDHs of both the A and B type, regardless of their ability to produce MPA. Duplication of the IMPDH gene occurred prior to and independent of the acquisition of the MPA biosynthetic cluster. Both P. brevicompactum IMPDHs are MPA-resistant while the IMPDHs from a nonproducer are MPA-sensitive. Resistance comes with a catalytic cost: while P. brevicompactum IMPDH-B is >1000-fold more resistant to MPA than a typical eukaryotic IMPDH, its value of k(cat)/K(m) is 0.5% of “normal”. Curiously, IMPDH-B of Penicillium chrysogenum, which does not produce MPA, is also a very poor enzyme. The MPA binding site is completely conserved among sensitive and resistant IMPDHs. Mutational analysis shows that the C-terminal segment is a major structural determinant of resistance. These observations suggest that the duplication of the IMPDH gene in Pencillium subgenus Penicillium was permissive for MPA production and that MPA production created a selective pressure on IMPDH evolution. Perhaps MPA production rescued IMPDH-B from deleterious genetic drift

Safety of percutaneous aortic valve insertion. A systematic review

<p>Abstract</p> <p>Background</p> <p>The technique of percutaneous aortic valve implantation (PAVI) for the treatment of severe aortic stenosis (AS) has been introduced in 2002. Since then, many thousands such devices have worldwide been implanted in patients at high risk for conventional surgery. The procedure related mortality associated with PAVI as reported in published case series is substantial, although the intervention has never been formally compared with standard surgery. The objective of this study was to assess the safety of PAVI, and to compare it with published data reporting the risk associated with conventional aortic valve replacement in high-risk subjects.</p> <p>Methods</p> <p>Studies published in peer reviewed journals and presented at international meetings were searched in major medical databases. Further data were obtained from dedicated websites and through contacts with manufacturers. The following data were extracted: patient characteristics, success rate of valve insertion, operative risk status, early and late all-cause mortality.</p> <p>Results</p> <p>The first PAVI has been performed in 2002. Because of procedural complexity, the original transvenous approach from 2004 on has been replaced by the transarterial and transapical routes. Data originating from nearly 2700 non-transvenous PAVIs were identified. In order to reduce the impact of technical refinements and the procedural learning curve, procedure related safety data from series starting recruitment in April 2007 or later (n = 1975) were focused on. One-month mortality rates range from 6.4 to 7.4% in transfemoral (TF) and 11.6 to 18.6% in transapical (TA) series. Observational data from surgical series in patients with a comparable predicted operative risk, indicate mortality rates that are similar to those in TF PAVI but substantially lower than in TA PAVI. From all identified PAVI series, 6-month mortality rates, reflecting both procedural risk and mortality related to underlying co-morbidities, range from 10.0-25.0% in TF and 26.1-42.8% in TA series. It is not known what the survival of these patients would have been, had they been treated medically or by conventional surgery.</p> <p>Conclusion</p> <p>Safety issues and short-term survival represent a major drawback for the implementation of PAVI, especially for the TA approach. Results from an ongoing randomised controlled trial (RCT) should be awaited before further using this technique in routine clinical practice. In the meantime, both for safety concerns and for ethical reasons, patients should only be subjected to PAVI within the boundaries of such an RCT.</p