5,525 research outputs found
Comparison of two-dimensional and three-dimensional droplet trajectory calculations in the vicinity of finite wings
Computational predictions of ice accretion on flying aircraft most commonly rely on modeling in two dimensions (2D). These 2D methods treat an aircraft geometry either as wing-like with infinite span, or as an axisymmetric body. Recently, fully three dimensional (3D) methods have been introduced that model an aircrafts true 3D shape. Because 3D methods are more computationally expensive than 2D methods, 2D methods continue to be widely used. However, a 3D method allows us to investigate whether it is valid to continue applying 2D methods to a finite wing. The extent of disagreement between LEWICE, a 2D method, and LEWICE3D, a 3D method, in calculating local collection efficiencies at the leading edge of finite wings is investigated in this paper
Ultrafast optical spin echo for electron spins in semiconductors
Spin-based quantum computing and magnetic resonance techniques rely on the
ability to measure the coherence time, T2, of a spin system. We report on the
experimental implementation of all-optical spin echo to determine the T2 time
of a semiconductor electron-spin system. We use three ultrafast optical pulses
to rotate spins an arbitrary angle and measure an echo signal as the time
between pulses is lengthened. Unlike previous spin-echo techniques using
microwaves, ultrafast optical pulses allow clean T2 measurements of systems
with dephasing times T2* fast in comparison to the timescale for microwave
control. This demonstration provides a step toward ultrafast optical dynamic
decoupling of spin-based qubits.Comment: 4 pages, 3 figure
Effective Invariant Theory of Permutation Groups using Representation Theory
Using the theory of representations of the symmetric group, we propose an
algorithm to compute the invariant ring of a permutation group. Our approach
have the goal to reduce the amount of linear algebra computations and exploit a
thinner combinatorial description of the invariant ring.Comment: Draft version, the corrected full version is available at
http://www.springer.com
Environmental and economic impacts of crude oil and natural gas production in developing countries
As much as the production of crude oil and natural gas generate enormous costs on the environment, it also directly impacts on the economy of the producing state. The later, among other reasons, is the motive for investing huge capital in the industry. This paper addresses the motives for the production of crude oil and natural gas; identifying the components of these products that are toxic to the environment and public health. Apart from highlighting the economic benefits accruing to the producing countries and her citizens, the study universally looked through the processes and products involved in crude oil and natural gas production and pointed out the impacts of these processes and products on the environment and the health of the public. It is believed that a complete understanding of the interplay between these processes and products with the environment will aid producing companies as well as governments of producing nations make better decisions on the strategies to minimize the effects of production activities on the environment and the health of the public
An investigation of susceptibility loci in benign, aggressive and primary progressive mutiple sclerosis in Northern Irish population
Coherent Population Trapping of Electron Spins in a Semiconductor
In high-purity n-type GaAs under strong magnetic field, we are able to
isolate a lambda system composed of two Zeeman states of neutral-donor bound
electrons and the lowest Zeeman state of bound excitons. When the two-photon
detuning of this system is zero, we observe a pronounced dip in the
excited-state photoluminescence indicating the creation of the coherent
population-trapped state. Our data are consistent with a steady-state
three-level density-matrix model. The observation of coherent population
trapping in GaAs indicates that this and similar semiconductor systems could be
used for various EIT-type experiments.Comment: 5 pages, 4 figures replaced 6/25/2007 with PRL versio
Millisecond spin-flip times of donor-bound electrons in GaAs
We observe millisecond spin-flip relaxation times of donor-bound electrons in
high-purity n-GaAs . This is three orders of magnitude larger than previously
reported lifetimes in n-GaAs . Spin-flip times are measured as a function of
magnetic field and exhibit a strong power-law dependence for fields greater
than 4 T . This result is in qualitative agreement with previously reported
theory and measurements of electrons in quantum dots.Comment: 4 pages, 4 figure
Lateral absorption measurements of InAs/GaAs quantum dots stacks: Potential as intermediate band material for high efficiency solar cells
Prototypes based on InAs/GaAs QDs have been manufactured in order to realize the theoretically predicted high efficiency intermediate band solar cells (IBSCs). Unfortunately, until now, these prototypes have not yet demonstrated the expected increase in efficiency when compared with reference samples without IB material. One of the main arguments explaining this performance is the weak photon absorption in the QD-IB material, arising from a low density of QDs. In this work, we have analyzed the absorption coefficient of the IB material by developing a sample in an optical wave-guided configuration. This configuration allows us to illuminate the QDs laterally, increasing the path length for photon absorption. Using a multi-section metal contact device design, we were able to measure an absorption coefficient of ∼100 cm−1 around the band edge (∼1 eV ) defined by the transition in InAs/GaAs QD-IB materials. This figure, and its influence on the IBSC concept, is analyzed for this system
Optical Characterization of Quantum Dot Intermediate Band Solar Cells
In this paper we present an optical characterization for quantum dot intermediate band solar cells (QDIBSCs). The cells were developed by growing a stack of ten InAs/GaAs QDs layers between p and n doped GaAs conventional emitters. Electroluminescence, EL, photoreflectance, PR, and transmission electron microscopy, TEM, were applied to the samples in order to test and characterize them optically. The results, derived from the application of the different techniques, showed a good correlation. TEM images revealed a very good structural quality of the QDs, which seem to evolve in shape-strain from the bottom to the top of the stack. Corresponding to the quality observed by TEM, strong signals from EL and PR resolved unambiguously the energy band diagram of the QDIBSCs. By fitting PR data we were able to indentify the coexistence of bands and discrete energy levels coming from the IB material. The PR data evidenced also a strong electric field over the dots, attributed to the space charge region created between the p-n emitters sandwiching the IB material. From EL results, we identified the predominantly radiative nature of the IB material related energy transition
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