The Achievements of the American Negro in the Present Era

Not AvailableColeridge M. Churchill.Not ListedDr. John R. ShannonCharles RollEdward M. GiffordMaster of ScienceDepartment Not ListedCunningham Memorial Library, Terre Haute, Indiana State Universityisua-thesis-1943-churchill.pdfMastersTitle from documant title page. Document formatted into pages: contains 66p. :ill. Includes bibliography

Microwave radiation induced magneto-oscillations in the longitudinal and transverse resistance of a two dimensional electron gas

We confirm the existance of magneto-resistance oscillations in a microwave-irradiated two-dimensional electron gas, first reported in a series of papers by Zhudov et al. and Mani et al. In our experiments, on a sample with a more moderate mobility, the microwave induced oscillations are observed not only in the longitudinal - but also in the transverse-resistance (Hall resistance). The phase of the oscillations is such that the decrease (increase) in the longitudinal resistance is accompanied by an increase (decrease) in the absolute value of the Hall resistance. We believe that these new results provide valuable new information to better understand the origin of this interesting phenomenon.Comment: Accepted for publication in journal of Solid State Comunication

"Forbidden" transitions between quantum Hall and insulating phases in p-SiGe heterostructures

We show that in dilute metallic p-SiGe heterostructures, magnetic field can cause multiple quantum Hall-insulator-quantum Hall transitions. The insulating states are observed between quantum Hall states with filling factors \nu=1 and 2 and, for the first time, between \nu=2 and 3 and between \nu=4 and 6. The latter are in contradiction with the original global phase diagram for the quantum Hall effect. We suggest that the application of a (perpendicular) magnetic field induces insulating behavior in metallic p-SiGe heterostructures in the same way as in Si MOSFETs. This insulator is then in competition with, and interrupted by, integer quantum Hall states leading to the multiple re-entrant transitions. The phase diagram which accounts for these transition is similar to that previously obtained in Si MOSFETs thus confirming its universal character

Metal Insulator transition at B=0 in p-SiGe

Observations are reported of a metal-insulator transition in a 2D hole gas in asymmetrically doped strained SiGe quantum wells. The metallic phase, which appears at low temperatures in these high mobility samples, is characterised by a resistivity that decreases exponentially with decreasing temperature. This behaviour, and the duality between resistivity and conductivity on the two sides of the transition, are very similar to that recently reported for high mobility Si-MOSFETs.Comment: 4 pages, REVTEX with 3 ps figure

Mobility-Dependence of the Critical Density in Two-Dimensional Systems: An Empirical Relation

For five different electron and hole systems in two dimensions (Si MOSFET's, p-GaAs, p-SiGe, n-GaAs and n-AlAs), the critical density, $n_c$ that marks the onset of strong localization is shown to be a single power-law function of the scattering rate $1/\tau$ deduced from the maximum mobility. The resulting curve defines the boundary separating a localized phase from a phase that exhibits metallic behavior. The critical density $n_c \to 0$ in the limit of infinite mobility.Comment: 2 pages, 1 figur

The effect of oscillating Fermi energy on the line shape of the Shubnikov-de Haas oscillation in a two dimensional electron gas

The line shape of the Shubnikov-de Haas (SdH) oscillation has been analyzed in detail for a GaAs/AlGaAs two-dimensional electron gas. The line shape, or equivalently the behavior of the Fourier components, of the experimentally observed SdH oscillation is well reproduced by the sinusoidal density of states at the Fermi energy that oscillates with a magnetic field in a saw-tooth shape to keep the electron density constant. This suggests that the broadening of each Landau level by disorder is better described by a Gaussian than by a Lorentzian.Comment: 7 pages,6 figures, minor revision

Comment on "Theory of metal-insulator transitions in gated semiconductors" (B. L. Altshuler and D. L. Maslov, Phys. Rev. Lett. 82, 145 (1999))

In a recent Letter, Altshuler and Maslov propose a model which attributes the anomalous temperature and field dependence of the resistivity of two-dimensional electron (or hole) systems to the charging and discharging of traps in the oxide (spacer), rather than to intrinsic behavior of interacting particles associated with a conductor-insulator transition in two dimensions. We argue against this model based on existing experimental evidence.Comment: 1 page; submitted to PR

Levitation of the quantum Hall extended states in the B→B\to 0 limit

We investigate the fate of the quantum Hall extended states within a continuum model with spatially correlated disorder potentials. The model can be projected onto a couple of the lowest Landau bands. Levitation of the $n=0$ critical states is observed if at least the two lowest Landau bands are considered. The dependence on the magnetic length $l_B=(\hbar/(eB))^{1/2}$ and on the correlation length of the disorder potential $\eta$ is combined into a single dimensionless parameter $\hat\eta=\eta/l_B$. This enables us to study the behavior of the critical states for vanishing magnetic field. In the two Landau band limit, we find a disorder dependent saturation of the critical states' levitation which is in contrast to earlier propositions, but in accord with some experiments.Comment: 7 pages, 9 figures. Replaced with published versio

Probing the potential landscape inside a two-dimensional electron-gas

We report direct observations of the scattering potentials in a two-dimensional electron-gas using electron-beam diffaction-experiments. The diffracting objects are local density-fluctuations caused by the spatial and charge-state distribution of the donors in the GaAs-(Al,Ga)As heterostructures. The scatterers can be manipulated externally by sample illumination, or by cooling the sample down under depleted conditions.Comment: 4 pages, 4 figure

The key role of smooth impurity potential in formation of hole spectrum for p-Ge/Ge_{1-x}Si_x heterostructures in the quantum Hall regime

We have measured the temperature (0.1 <= T <= 15 K) and magnetic field (0 <= B <= 12 T) dependences of longitudinal and Hall resistivities for the p-Ge_0.93Si_0.07/Ge multilayers with different Ge layer widths 10 <= d_w <= 38 nm and hole densities p_s = (1-5)10^11 cm^-2. Two models for the long-range random impurity potential (the model with randomly distributed charged centers located outside the conducting layer and the model of the system with a spacer) are used for evaluation of the impurity potential fluctuation characteristics: the random potential amplitude, nonlinear screening length in vicinity of integer filling factors nu = 1 and nu = 2 and the background density of state (DOS). The described models are suitable for explanation of the unusually high value of DOS at nu = 1 and nu = 2, in contrast to the short-range impurity potential models. For half-integer filling factors the linear temperature dependence of the effective QHE plateau-to-plateau transition width nu_0(T) is observed in contrast to scaling behavior for systems with short-range disorder. The finite T -> 0 width of QHE transitions may be due to an effective low temperature screening of smooth random potential owing to Coulomb repulsion of electrons.Comment: Accepted for publication in Nanotechnolog