740 research outputs found
The Achievements of the American Negro in the Present Era
Not AvailableColeridge M. Churchill.Not ListedDr. John R. ShannonCharles RollEdward M. GiffordMaster of ScienceDepartment Not ListedCunningham Memorial Library, Terre Haute, Indiana State Universityisua-thesis-1943-churchill.pdfMastersTitle from documant title page. Document formatted into pages: contains 66p. :ill. Includes bibliography
Microwave radiation induced magneto-oscillations in the longitudinal and transverse resistance of a two dimensional electron gas
We confirm the existance of magneto-resistance oscillations in a
microwave-irradiated two-dimensional electron gas, first reported in a series
of papers by Zhudov et al. and Mani et al. In our experiments, on a sample with
a more moderate mobility, the microwave induced oscillations are observed not
only in the longitudinal - but also in the transverse-resistance (Hall
resistance). The phase of the oscillations is such that the decrease (increase)
in the longitudinal resistance is accompanied by an increase (decrease) in the
absolute value of the Hall resistance. We believe that these new results
provide valuable new information to better understand the origin of this
interesting phenomenon.Comment: Accepted for publication in journal of Solid State Comunication
"Forbidden" transitions between quantum Hall and insulating phases in p-SiGe heterostructures
We show that in dilute metallic p-SiGe heterostructures, magnetic field can
cause multiple quantum Hall-insulator-quantum Hall transitions. The insulating
states are observed between quantum Hall states with filling factors \nu=1 and
2 and, for the first time, between \nu=2 and 3 and between \nu=4 and 6. The
latter are in contradiction with the original global phase diagram for the
quantum Hall effect. We suggest that the application of a (perpendicular)
magnetic field induces insulating behavior in metallic p-SiGe heterostructures
in the same way as in Si MOSFETs. This insulator is then in competition with,
and interrupted by, integer quantum Hall states leading to the multiple
re-entrant transitions. The phase diagram which accounts for these transition
is similar to that previously obtained in Si MOSFETs thus confirming its
universal character
Metal Insulator transition at B=0 in p-SiGe
Observations are reported of a metal-insulator transition in a 2D hole gas in
asymmetrically doped strained SiGe quantum wells. The metallic phase, which
appears at low temperatures in these high mobility samples, is characterised by
a resistivity that decreases exponentially with decreasing temperature. This
behaviour, and the duality between resistivity and conductivity on the two
sides of the transition, are very similar to that recently reported for high
mobility Si-MOSFETs.Comment: 4 pages, REVTEX with 3 ps figure
Mobility-Dependence of the Critical Density in Two-Dimensional Systems: An Empirical Relation
For five different electron and hole systems in two dimensions (Si MOSFET's,
p-GaAs, p-SiGe, n-GaAs and n-AlAs), the critical density, that marks the
onset of strong localization is shown to be a single power-law function of the
scattering rate deduced from the maximum mobility. The resulting curve
defines the boundary separating a localized phase from a phase that exhibits
metallic behavior. The critical density in the limit of infinite
mobility.Comment: 2 pages, 1 figur
The effect of oscillating Fermi energy on the line shape of the Shubnikov-de Haas oscillation in a two dimensional electron gas
The line shape of the Shubnikov-de Haas (SdH) oscillation has been analyzed
in detail for a GaAs/AlGaAs two-dimensional electron gas. The line shape, or
equivalently the behavior of the Fourier components, of the experimentally
observed SdH oscillation is well reproduced by the sinusoidal density of states
at the Fermi energy that oscillates with a magnetic field in a saw-tooth shape
to keep the electron density constant. This suggests that the broadening of
each Landau level by disorder is better described by a Gaussian than by a
Lorentzian.Comment: 7 pages,6 figures, minor revision
Comment on "Theory of metal-insulator transitions in gated semiconductors" (B. L. Altshuler and D. L. Maslov, Phys. Rev. Lett. 82, 145 (1999))
In a recent Letter, Altshuler and Maslov propose a model which attributes the
anomalous temperature and field dependence of the resistivity of
two-dimensional electron (or hole) systems to the charging and discharging of
traps in the oxide (spacer), rather than to intrinsic behavior of interacting
particles associated with a conductor-insulator transition in two dimensions.
We argue against this model based on existing experimental evidence.Comment: 1 page; submitted to PR
Levitation of the quantum Hall extended states in the 0 limit
We investigate the fate of the quantum Hall extended states within a
continuum model with spatially correlated disorder potentials. The model can be
projected onto a couple of the lowest Landau bands. Levitation of the
critical states is observed if at least the two lowest Landau bands are
considered. The dependence on the magnetic length and
on the correlation length of the disorder potential is combined into a
single dimensionless parameter . This enables us to study
the behavior of the critical states for vanishing magnetic field. In the two
Landau band limit, we find a disorder dependent saturation of the critical
states' levitation which is in contrast to earlier propositions, but in accord
with some experiments.Comment: 7 pages, 9 figures. Replaced with published versio
Probing the potential landscape inside a two-dimensional electron-gas
We report direct observations of the scattering potentials in a
two-dimensional electron-gas using electron-beam diffaction-experiments. The
diffracting objects are local density-fluctuations caused by the spatial and
charge-state distribution of the donors in the GaAs-(Al,Ga)As heterostructures.
The scatterers can be manipulated externally by sample illumination, or by
cooling the sample down under depleted conditions.Comment: 4 pages, 4 figure
The key role of smooth impurity potential in formation of hole spectrum for p-Ge/Ge_{1-x}Si_x heterostructures in the quantum Hall regime
We have measured the temperature (0.1 <= T <= 15 K) and magnetic field (0 <=
B <= 12 T) dependences of longitudinal and Hall resistivities for the
p-Ge_0.93Si_0.07/Ge multilayers with different Ge layer widths 10 <= d_w <= 38
nm and hole densities p_s = (1-5)10^11 cm^-2. Two models for the long-range
random impurity potential (the model with randomly distributed charged centers
located outside the conducting layer and the model of the system with a spacer)
are used for evaluation of the impurity potential fluctuation characteristics:
the random potential amplitude, nonlinear screening length in vicinity of
integer filling factors nu = 1 and nu = 2 and the background density of state
(DOS). The described models are suitable for explanation of the unusually high
value of DOS at nu = 1 and nu = 2, in contrast to the short-range impurity
potential models. For half-integer filling factors the linear temperature
dependence of the effective QHE plateau-to-plateau transition width nu_0(T) is
observed in contrast to scaling behavior for systems with short-range disorder.
The finite T -> 0 width of QHE transitions may be due to an effective low
temperature screening of smooth random potential owing to Coulomb repulsion of
electrons.Comment: Accepted for publication in Nanotechnolog
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