Self phase modulation in Highly nonlinear hydrogenated amorphous silicon

We study self phase modulation in submicron amorphous silicon-on-insulator waveguides. We extract both the real and imaginary part of the nonlinear parameter gamma from a 1 cm long waveguide with a cross-section of 500x220nm(2). The real and imaginary part of the nonlinear parameter are found to be 767W(-1)m(-1) and -28W(-1)m(-1) respectively. The figure of merit (FOM) is found to be 3.6 times larger than the FOM in crystalline silicon (c-Si)

Strong polarization mode coupling in microresonators

We observe strong modal coupling between the TE00 and TM00 modes in Si3N4 ring resonators revealed by avoided crossings of the corresponding resonances. Such couplings result in significant shifts of the resonance frequencies over a wide range around the crossing points. This leads to an effective dispersion that is one order of magnitude larger than the intrinsic dispersion and creates broad windows of anomalous dispersion. We also observe the changes to frequency comb spectra generated in Si3N4 microresonators due polarization mode and higher-order mode crossings and suggest approaches to avoid these effects. Alternatively, such polarization mode-crossings can be used as a novel tool for dispersion engineering in microresonators.Comment: Comments are very welcome (send to corresponding author

High index contrast photonic platforms for on-chip Raman spectroscopy

Nanophotonic waveguide enhanced Raman spectroscopy (NWERS) is a sensing technique that uses a highly confined waveguide mode to excite and collect the Raman scattered signal from molecules in close vicinity of the waveguide. The most important parameters defining the figure of merit of an NWERS sensor include its ability to collect the Raman signal from an analyte, i.e. "the Raman conversion efficiency" and the amount of "Raman background" generated from the guiding material. Here, we compare different photonic integrated circuit (PIC) platforms capable of on-chip Raman sensing in terms of the aforementioned parameters. Among the four photonic platforms under study, tantalum oxide and silicon nitride waveguides exhibit high signal collection efficiency and low Raman background. In contrast, the performance of titania and alumina waveguides suffers from a strong Raman background and a weak signal collection efficiency, respectively

Visible-to-near-infrared octave spanning supercontinuum generation in a silicon nitride waveguide

The generation of an octave spanning supercontinuum covering 488-978 nm (at -30 dB) is demonstrated for the first time on-chip. This result is achieved by dispersion engineering a 1-cm-long Si3N4 waveguide and pumping it with an 100-fs Ti:Sapphire laser emitting at 795 nm. This work offers a bright broadband source for biophotonic applications and frequency metrology. © 2015 Optical Society of America.info:eu-repo/semantics/publishe

Nonlinear optical interactions in silicon waveguides

The strong nonlinear response of silicon photonic nanowire waveguides allows for the integration of nonlinear optical functions on a chip. However, the detrimental nonlinear optical absorption in silicon at telecom wavelengths limits the efficiency of many such experiments. In this review, several approaches are proposed and demonstrated to overcome this fundamental issue. By using the proposed methods, we demonstrate amongst others supercontinuum generation, frequency comb generation, a parametric optical amplifier, and a parametric optical oscillator

Continuous generation of rubidium vapor in a hollow core photonic band-gap fiber

We demonstrate high optical depths of > 50 lasting over 100 minutes in a Rubidium filled PBGF using an off-resonant CW laser beam, which enables straightforward measurement of cross-phase modulation at the single photon level