177 research outputs found
Predicting ground-state configurations and electronic properties of the thermoelectric clathrates BaAlSi and SrAlSi
The structural and electronic properties of the clathrate compounds
BaAlSi and SrAlSi are studied from
first principles, considering an Al content between 6 and 16. Due to the
large number of possible substitutional configurations we make use of a special
iterative cluster-expansion approach, to predict ground states and
quasi-degenerate structures in a highly efficient way. These are found from a
simulated annealing technique where millions of configurations are sampled. For
both compounds, we find a linear increase of the lattice constant with the
number of Al substituents, confirming experimental observations for
BaAlSi. Also the calculated bond distances between
high-symmetry sites agree well with experiment for the full compositional
range. For being below 16, all configurations are metallic for both
materials. At the charge-balanced composition (), the substitutional
ordering leads to a metal-semiconductor transition, and the ground states of
BaAlSi and SrAlSi exhibit indirect
Kohn-Sham band gaps of 0.36 and 0.30 eV, respectively, while configurations
higher in energy are metals. The finding of semiconducting behavior is a
promising result in view of exploiting these materials in thermoelectric
applications.Comment: 9 figure
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