DataSheet1_Recognition of H2AK119ub plays an important role in RSF1-regulated early Xenopus development.PDF

Polycomb group (PcG) proteins are key regulators of gene expression and developmental programs via covalent modification of histones, but the factors that interpret histone modification marks to regulate embryogenesis are less studied. We previously identified Remodeling and Spacing Factor 1 (RSF1) as a reader of histone H2A lysine 119 ubiquitination (H2AK119ub), the histone mark deposited by Polycomb Repressive Complex 1 (PRC1). In the current study, we used Xenopus laevis as a model to investigate how RSF1 affects early embryonic development and whether recognition of H2AK119ub is important for the function of RSF1. We showed that knockdown of Xenopus RSF1, rsf1, not only induced gastrulation defects as reported previously, but specific targeted knockdown in prospective neural precursors induced neural and neural crest defects, with reductions of marker genes. In addition, similar to knockdown of PRC1 components in Xenopus, the anterior-posterior neural patterning was affected in rsf1 knockdown embryos. Binding of H2AK119ub appeared to be crucial for rsf1 function, as a construct with deletion of the UAB domain, which is required for RSF1 to recognize the H2AK119ub nucleosomes, failed to rescue rsf1 morphant embryos and was less effective in interfering with early Xenopus development when ectopically expressed. Furthermore, ectopic deposition of H2AK119ub on the Smad2 target gene gsc using a ring1a-smad2 fusion protein led to ectopic recruitment of RSF1. The fusion protein was inefficient in inducing mesodermal markers in the animal region or a secondary axis when expressed in the ventral tissues. Taken together, our results reveal that rsf1 modulates similar developmental processes in early Xenopus embryos as components of PRC1 do, and that RSF1 acts at least partially through binding to the H2AK119ub mark via the UAB domain during development.</p

Spontaneous Periodic Delamination of Thin Films To Form Crack-Free Metal and Silicon Ribbons with High Stretchability

Design of electronic materials with high stretchability is of great importance for realizing soft and conformal electronics. One strategy of realizing stretchable metals and semiconductors is to exploit the buckling of materials bonded to elastomers. However, the level of stretchability is often limited by the cracking and fragmentation of the materials that occurs when constrained buckling occurs while bonded to the substrate. Here, we exploit a failure mechanism, spontaneous buckling-driven periodic delamination, to achieve high stretchability in metal and silicon films that are deposited on prestrained elastomer substrates. We find that both globally periodic buckle-delaminated pattern and ordered cracking patterns over large areas are observed in the spontaneously buckle-delaminated thin films. The geometry of periodic delaminated buckles and cracking periodicity can be predicted by theoretical models. By patterning the films into ribbons with widths smaller than the predicted cracking periodicity, we demonstrate the design of crack-free and spontaneous delaminated ribbons on highly prestrained elastomer substrates, which provides a high stretchability of about 120% and 400% in Si and Au ribbons, respectively. We find that the high stretchability is mainly attributed to the largely relaxed strain in the ribbons via spontaneous buckling-driven delamination, as made evident by the small maximum tensile strain in both ribbons, which is measured to be over 100 times smaller than that of the substrate prestrain

Evolution of Structural and Electrical Properties of Oxygen-Deficient VO₂ under Low Temperature Heating Process

Structural stability and functional performances of vanadium dioxide (VO₂) are strongly influenced by oxygen vacancies. However, the mechanism of metal–insulator transition (MIT) influenced by defects is still under debate. Here, we study the evolution of structure and electrical property of oxygen-deficient VO₂ by a low temperature annealing process (LTP) based on a truss-structured VO₂ nanonet. The oxygenation process of the oxygen-deficient VO₂ is greatly prolonged, which enables us to probe the gradual change of properties of the oxygen-deficient VO₂. A continuous lattice reduction is observed during LTP. No recrystallization and structural collapse of the VO₂ nanonet can be found after LTP. The valence-band X-ray photoelectron spectroscopy (XPS) measurements indicate that the oxygen deficiency strongly affects the energy level of the valence band edge. Correspondingly, the resistance changes of the VO₂ films from 1 to 4.5 orders of magnitude are achieved by LTP. The effect of oxygen vacancy on the electric field driven MIT is investigated. The threshold value of voltage triggering the MIT decreases with increasing the oxygen vacancy concentration. This work demonstrates a novel and effective way to control the content of oxygen vacancies in VO₂ and the obvious impact of oxygen vacancy on MIT, facilitating further research on the role of oxygen vacancy in structure and MIT of VO₂, which is important for the deep understanding of MIT and exploiting innovative functional application of VO₂