6 research outputs found
High-Performance Transparent Conducting Metal Network Electrodes for Perovksite Photodetectors
Transparent conducting
electrodes with high transparency and conductivity are necessary components
for optoelectronic devices. In this work, a facile wet-chemical lift-off
process is first introduced to fabricate Au network flexible transparent
electrodes with electrospun polymer fiber network as mask. Low resistance
(5.18 Ω sq<sup>–1</sup>) of the transparent electrode
was obtained when the transparency was around 90%, which was comparable
to the state-of-the-art transparent electrodes. Low root-mean-square
roughness of 23 nm was obtained when the Au nanowire thickness was
30 nm. The perovskite CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> photodetector
based on the 30 nm thick Au network electrode shows a large linear
dynamic range of 138 dB, a high detectivity over 10<sup>12</sup> Jones,
and better flexibility than that based on the commercial indium tin
oxide electrode, which demonstrates that the Au network electrode
is a promising flexible transparent conducting electrode for optoelectronic
devices
Study on the Ambient Temperature as an Important but Easily Neglected Factor in the Process of Preparing Photovoltaic All-Inorganic CsPbIBr<sub>2</sub> Perovskite Film by the Elegant Solvent-Controlled Growth Strategy
All-inorganic CsPbIBr2 perovskite has received
extensive
attention in the field of solar cells due to its good wet and thermal
stability as well as a moderate band gap. In the preparation of CsPbIBr2 film by one-step spin-coating method, the amount of dimethyl
sulfoxide solvent remaining in the precursor film has a great influence
on the process of film growth. Therefore, it is necessary to ensure
that an appropriate amount of solvent exists in the precursor film
before annealing. Herein, we adopted the solvent-controlled growth
(SCG) strategy, that is, standing by the precursor films in the nitrogen
glovebox for a period of time before annealing, to make sure that
excess solvent can be evaporated from the precursor film. In this
work, we found that the ambient temperature is an important but easily
neglected factor in the process of preparing CsPbIBr2 film
by the SCG strategy. When the ambient temperature is 20 °C, SCG
treatment is required to obtain a flat and dense CsPbIBr2 film. However, SCG treatment is not essential at 30 °C. The
ambient temperature has an impact on the evaporation rate of the solvent
in the precursor film, and thus affects the effect of the SCG strategy.
This work highlights that, when preparing CsPbIBr2 film
by a one-step spin-coating method, in order to obtain a high-quality
CsPbIBr2 film, the influence of ambient temperature on
solvent-controlled growth strategy should be considered
Nucleation and Crystal Growth of Organic–Inorganic Lead Halide Perovskites under Different Relative Humidity
Organic–inorganic lead halide
perovskite compounds are very promising materials for high-efficiency
perovskite solar cells. But how to fabricate high-quality perovksite
films under controlled humidity conditions is still an important issue
due to their sensitivity to moisture. In this study, we investigated
the influence of ambient humidity on crystallization and surface morphology
of one-step spin-coated perovskite films, as well as the performance
of solar cells based on these perovskite films. On the basis of experimental
analyses and thin film growth theory, we conclude that the influence
of ambient humidity on nucleation at spin-coating stage is quite different
from that on crystal growth at annealing stage. At the spin-coating
stage, high nucleation density induced by high supersaturation prefers
to appear under anhydrous circumstances, resulting in layer growth
and high coverage of perovskite films. But at the annealing stage,
the modest supersaturation benefits formation of perovskite films
with good crystallinity. The films spin-coated under low relative
humidity (RH) followed by annealing under high RH show an increase
of crystallinity and improved performance of devices. Therefore, a
mechanism of fast nucleation followed by modest crystal growth (high
supersaturation at spin-coating stage and modest supersaturation at
annealing stage) is suggested in the formation of high-quality perovskite
films
Highly Flexible Self-Powered Organolead Trihalide Perovskite Photodetectors with Gold Nanowire Networks as Transparent Electrodes
Organolead
trihalide perovskites (OTPs) such as CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> (MAPbI<sub>3</sub>) have attracted much attention as the
absorbing layer in solar cells and photodetectors (PDs). Flexible
OTP devices have also been developed. Transparent electrodes (TEs)
with higher conductivity, stability, and flexibility are necessary
to improve the performance and flexibility of flexible OTP devices.
In this work, patterned Au nanowire (AuNW) networks with high conductivity
and stability are prepared and used as TEs in self-powered flexible
MAPbI<sub>3</sub> PDs. These flexible PDs show peak external quantum
efficiency and responsivity of 60% and 321 mA/W, which are comparable
to those of MAPbI<sub>3</sub> PDs based on ITO TEs. The linear dynamic
range and response time of the AuNW-based flexible PDs reach ∼84
dB and ∼4 μs, respectively. Moreover, they show higher
flexibility than ITO-based devices, around 90%, and 60% of the initial
photocurrent can be retained for the AuNW-based flexible PDs when
bent to radii of 2.5 and 1.5 mm. This work suggests a high-performance,
highly flexible, and stable TE for OTP flexible devices
Enhanced Performance of Photoelectrochemical Water Splitting with ITO@α-Fe<sub>2</sub>O<sub>3</sub> Core–Shell Nanowire Array as Photoanode
Hematite
(α-Fe<sub>2</sub>O<sub>3</sub>) is one of the most
promising candidates for photoelectrodes in photoelectrochemical water
splitting system. However, the low visible light absorption coefficient
and short hole diffusion length of pure α-Fe<sub>2</sub>O<sub>3</sub> limits the performance of α-Fe<sub>2</sub>O<sub>3</sub> photoelectrodes in water splitting. Herein, to overcome these drawbacks,
single-crystalline tin-doped indium oxide (ITO) nanowire core and
α-Fe<sub>2</sub>O<sub>3</sub> nanocrystal shell (ITO@α-Fe<sub>2</sub>O<sub>3</sub>) electrodes were fabricated by covering the
chemical vapor deposited ITO nanowire array with compact thin α-Fe<sub>2</sub>O<sub>3</sub> nanocrystal film using chemical bath deposition
(CBD) method. The <i>J</i>–<i>V</i> curves
and IPCE of ITO@α-Fe<sub>2</sub>O<sub>3</sub> core–shell
nanowire array electrode showed nearly twice as high performance as
those of the α-Fe<sub>2</sub>O<sub>3</sub> on planar Pt-coated
silicon wafers (Pt/Si) and on planar ITO substrates, which was considered
to be attributed to more efficient hole collection and more loading
of α-Fe<sub>2</sub>O<sub>3</sub> nanocrystals in the core–shell
structure than planar structure. Electrochemical impedance spectra
(EIS) characterization demonstrated a low interface resistance between
α-Fe<sub>2</sub>O<sub>3</sub> and ITO nanowire arrays, which
benefits from the well contact between the core and shell. The stability
test indicated that the prepared ITO@α-Fe<sub>2</sub>O<sub>3</sub> core–shell nanowire array electrode was stable under AM1.5
illumination during the test period of 40 000 s
<i>In Situ</i> Fabrication of Highly Conductive Metal Nanowire Networks with High Transmittance from Deep-Ultraviolet to Near-Infrared
We have developed a facile and compatible method to <i>in situ</i> fabricate uniform metal nanowire networks on substrates. The as-fabricated metal nanowire networks show low sheet resistance and high transmittance (2.2 Ω sq<sup>–1</sup> at <i>T</i> = 91.1%), which is equivalent to that of the state-of-the-art metal nanowire networks. We demonstrated that the transmittance of the metal networks becomes homogeneous from deep-ultraviolet (200 nm) to near-infrared (2000 nm) when the size of the wire spacing increases to micrometer size. Theoretical and experimental analyses indicated that we can improve the conductivity of the metal networks as well as keep their transmittance by increasing the thickness of the metal films. We also carried out durability tests to demonstrate our as-fabricated metal networks having good flexibility and strong adhesion