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Wafer-Scale Synthesis of High-Quality Semiconducting Two-Dimensional Layered InSe with Broadband Photoresponse
Large-scale synthesis
of two-dimensional (2D) materials is one
of the significant issues for fabricating layered materials into practical
devices. As one of the typical III–VI semiconductors, InSe
has attracted much attention due to its outstanding electrical transport
property, attractive quantum physics characteristics, and dramatic
photoresponse when it is reduced to atomic scale. However, scalable
synthesis of single phase 2D InSe has not yet been achieved so far,
greatly hindering further fundamental studies and device applications.
Here, we demonstrate the direct growth of wafer-scale layered InSe
nanosheets by pulsed laser deposition (PLD). The obtained InSe layers
exhibit good uniformity, high crystallinity with macro texture feature,
and stoichiometric growth by <i>in situ</i> precise control.
The characterization of optical properties indicates that PLD grown
InSe nanosheets have a wide range tunable band gap (1.26–2.20
eV) among the large-scale 2D crystals. The device demonstration of
field-effect transistor shows the n-type channel feature with high
mobility of 10 cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup>. Upon illumination, InSe-based phototransistors show a broad photoresponse
to the wavelengths from ultraviolet to near-infrared. The maximum
photoresponsivity attains 27 A/W, plus a response time of 0.5 s for
the rise and 1.7 s for the decay, demonstrating the strong and fast
photodetection ability. Our findings suggest that the PLD grown InSe
would be a promising choice for future device applications in the
2D limit