Aspect ratio dependence of heat transport by turbulent Rayleigh-B\'{e}nard convection in rectangular cells

We report high-precision measurements of the Nusselt number $Nu$ as a function of the Rayleigh number $Ra$ in water-filled rectangular Rayleigh-B\'{e}nard convection cells. The horizontal length $L$ and width $W$ of the cells are 50.0 cm and 15.0 cm, respectively, and the heights $H=49.9$, 25.0, 12.5, 6.9, 3.5, and 2.4 cm, corresponding to the aspect ratios $(\Gamma_x\equiv L/H,\Gamma_y\equiv W/H)=(1,0.3)$, $(2,0.6)$, $(4,1.2)$, $(7.3,2.2)$, $(14.3,4.3)$, and $(20.8,6.3)$. The measurements were carried out over the Rayleigh number range $6\times10^5\lesssim Ra\lesssim10^{11}$ and the Prandtl number range $5.2\lesssim Pr\lesssim7$. Our results show that for rectangular geometry turbulent heat transport is independent of the cells' aspect ratios and hence is insensitive to the nature and structures of the large-scale mean flows of the system. This is slightly different from the observations in cylindrical cells where $Nu$ is found to be in general a decreasing function of $\Gamma$, at least for $\Gamma=1$ and larger. Such a difference is probably a manifestation of the finite plate conductivity effect. Corrections for the influence of the finite conductivity of the top and bottom plates are made to obtain the estimates of $Nu_{\infty}$ for plates with perfect conductivity. The local scaling exponents $\beta_l$ of $Nu_{\infty}\sim Ra^{\beta_l}$ are calculated and found to increase from 0.243 at $Ra\simeq9\times10^5$ to 0.327 at $Ra\simeq4\times10^{10}$.Comment: 15 pages, 7 figures, Accepted by Journal of Fluid Mechanic

Density-driven higher-order topological phase transitions in amorphous solids

Amorphous topological states, which are independent of the specific spatial distribution of microscopic constructions, have gained much attention. Recently, higher-order topological insulators, which are a new class of topological phases of matter, have been proposed in amorphous systems. Here, we propose a density-driven higher-order topological phase transition in a two-dimensional amorphous system. We demonstrate that the amorphous system hosts a topological trivial phase at low density. With an increase in the density of lattice sites, the topological trivial phase converts to a higher-order topological phase characterized by a quantized quadrupole moment and the existence of topological corner states. Furthermore, we confirm that the density-driven higher-order topological phase transition is size dependent. In addition, our results should be general and equally applicable to three-dimensional amorphous systems. Our findings may greatly enrich the study of higher-order topological states in amorphous systems

Highly Efficient White Organic Light-Emitting Diodes with Controllable Excitons Behavior by a Mixed Interlayer between Fluorescence Blue and Phosphorescence Yellow-Emitting Layers

A highly efficient hybrid white organic light-emitting diode (HWOLED) has been demonstrated with a mixed interlayer between fluorescent blue and phosphorescent yellow-emitting layers. The device structure is simplified by using a controllable fluorescence-mixed interlayer-phosphorescence emission layer structure. The electroluminance (EL) performance can be modulated easily by adjusting the ratio of the hole-predominated material to the electron-predominated material in the interlayer. It is found that the HWOLED with a ratio of 3 : 2 exhibits a current efficiency of 34 cd/A and a power efficiency of 29 lm/W at 1000 cd/m2 with warm white Commission Internationale de l’Eclairage (CIE1931) coordinates of (0.4273, 0.4439). The improved efficiency and adaptive CIE coordinates are attributed to the controllable mixed interlayer with enhanced charge carrier transport, optimized excitons distribution, and improved harvestings of singlet and triplet excitons

Topological surface electronic states in candidate nodal-line semimetal CaAgAs

We investigate systematically the bulk and surface electronic structure of the candidate nodal-line semimetal CaAgAs by angle resolved photoemission spectroscopy and density functional calculations. We observed a metallic, linear, non-$k_z$-dispersive surface band that coincides with the high-binding-energy part of the theoretical topological surface state, proving the topological nontriviality of the system. An overall downshift of the experimental Fermi level points to a rigid-band-like $p$-doping of the samples, due possibly to Ag vacancies in the as-grown crystals.Comment: 6 pages, 5 figure

THE IMPACTS OF GOVERNMENT R&D EXPENDITURE ON INNOVATION IN CHINESE PROVINCES: WHAT’S THE ROLE OF CORRUPTION

This study aims to investigate the moderating role of corruption on the effect of government R&D expenditure on enterprise innovation in China, using the annually data over the period 2002-2013 in a panel of 30 provinces. A dynamic panel system GMM model was used to explore the relationship among government R&D expenditure, corruption, and innovation. Our finding shows that though government R&D expenditure has no significant effects on patent applications, it does exhibit significantly positive effects on patents granted. However, when considering official corruption, the interaction term of government R&D expenditure and corruption has a statistically significantly positive effect on patent applications and patents granted, with corruption presenting significantly positive effects on the ratio of the number of patents granted to patent applications. It demonstrates that corruption is still a shortcut for overcoming red tapes and administrative intervention, especially in an economy in transition with lower institution quality and anti-corruption