Dynamical Properties of a Growing Surface on a Random Substrate

The dynamics of the discrete Gaussian model for the surface of a crystal deposited on a disordered substrate is investigated by Monte Carlo simulations. The mobility of the growing surface was studied as a function of a small driving force $F$ and temperature $T$. A continuous transition is found from high-temperature phase characterized by linear response to a low-temperature phase with nonlinear, temperature dependent response. In the simulated regime of driving force the numerical results are in general agreement with recent dynamic renormalization group predictions.Comment: 10 pages, latex, 3 figures, to appear in Phys. Rev. E (RC

Phase separation and vortex states in binary mixture of Bose-Einstein condensates in the trapping potentials with displaced centers

The system of two simultaneously trapped codensates consisting of $^{87}Rb$ atoms in two different hyperfine states is investigated theoretically in the case when the minima of the trapping potentials are displaced with respect to each other. It is shown that the small shift of the minima of the trapping potentials leads to the considerable displacement of the centers of mass of the condensates, in agreement with the experiment. It is also shown that the critical angular velocities of the vortex states of the system drastically depend on the shift and the relative number of particles in the condensates, and there is a possibility to exchange the vortex states between condensates by shifting the centers of the trapping potentials.Comment: 4 pages, 2 figure

Co-ordination between Rashba spin-orbital interaction and space charge effect and enhanced spin injection into semiconductors

We consider the effect of the Rashba spin-orbital interaction and space charge in a ferromagnet-insulator/semiconductor/insulator-ferromagnet junction where the spin current is severely affected by the doping, band structure and charge screening in the semiconductor. In diffusion region, if the the resistance of the tunneling barriers is comparable to the semiconductor resistance, the magnetoresistance of this junction can be greatly enhanced under appropriate doping by the co-ordination between the Rashba effect and screened Coulomb interaction in the nonequilibrium transport processes within Hartree approximation.Comment: 4 pages, 3 figure

Binary Bose-Einstein Condensate Mixtures in Weakly and Strongly Segregated Phases

We perform a mean-field study of the binary Bose-Einstein condensate mixtures as a function of the mutual repulsive interaction strength. In the phase segregated regime, we find that there are two distinct phases: the weakly segregated phase characterized by a `penetration depth' and the strongly segregated phase characterized by a healing length. In the weakly segregated phase the symmetry of the shape of each condensate will not take that of the trap because of the finite surface tension, but its total density profile still does. In the strongly segregated phase even the total density profile takes a different symmetry from that of the trap because of the mutual exclusion of the condensates. The lower critical condensate-atom number to observe the complete phase segregation is discussed. A comparison to recent experimental data suggests that the weakly segregated phase has been observed.Comment: minor change

Magnetic Field Induced Insulating Phases at Large rsr_s

Exploring a backgated low density two-dimensional hole sample in the large $r_s$ regime we found a surprisingly rich phase diagram. At the highest densities, beside the $\nu=1/3$, 2/3, and 2/5 fractional quantum Hall states, we observe both of the previously reported high field insulating and reentrant insulating phases. As the density is lowered, the reentrant insulating phase initially strengthens, then it unexpectedly starts weakening until it completely dissapears. At the lowest densities the terminal quantum Hall state moves from $\nu=1/3$ to $\nu=1$. The intricate behavior of the insulating phases can be explained by a non-monotonic melting line in the $\nu$-$r_s$ phase space

Glassy Roughness of a Crystalline Surface Upon a Disordered Substrate

The discrete Gaussian model for the surface of a crystal deposited on a disordered substrate is studied by Monte Carlo simulations. A continuous transition is found from a phase with a thermally-induced roughness to a glassy one in which the roughness is driven by the disorder. The behavior of the height-height correlations is consistent with the one-step replica symmetry broken solution of the variational approximation. The results differ from the renormalization group predictions and from recent simulations of a 2D vortex-glass model which belongs to the same universality class.Comment: 12 pages (RevTeX) & 3 figures (PS) uuencode

Measurement of statistical nuclear spin polarization in a nanoscale GaAs sample

We measure the statistical polarization of quadrupolar nuclear spins in a sub-micrometer (0.6 um^3) particle of GaAs using magnetic resonance force microscopy. The crystalline sample is cut out of a GaAs wafer and attached to a micro-mechanical cantilever force sensor using a focused ion beam technique. Nuclear magnetic resonance is demonstrated on ensembles containing less than 5 x 10^8 nuclear spins and occupying a volume of around (300 nm)^3 in GaAs with reduced volumes possible in future experiments. We discuss how the further reduction of this detection volume will bring the spin ensemble into a regime where random spin fluctuations, rather than Boltzmann polarization, dominate its dynamics. The detection of statistical polarization in GaAs therefore represents an important first step toward 3D magnetic resonance imaging of III-V materials on the nanometer-scale.Comment: 20 pages, 6 figures, 1 supplementary fil

Wigner crystallization and metal-insulator transition of two-dimensional holes in GaAs/AlGaAs at B=0

We report the transport properties of a low disorder two-dimensional hole system (2DHS) in the GaAs/AlGaAs heterostructure, which has an unprecedentedly high peak mobility of $7\times 10^5cm^2/Vs$, with hole density of $4.8\times 10^9 cm^{-2}<p<3.72\times 10^{10}cm^{-2}$ in the temperature range of $50mK<T<1.3K$. From their T, p, and electric field dependences, we find that the metal-insulator transition in zero magnetic field in this exceptionally clean 2DHS occurs at $r_s=35.1\pm0.9$, which is in good agreement with the critical $r_s$ for Wigner crystallization ${r_s}^c=37\pm 5$, predicted by Tanatar and Ceperley for an ideally clean 2D system.Comment: 4 pages, 4 Postscript figure

Heat Capacity of ^3He in Aerogel

The heat capacity of pure ^3He in low density aerogel is measured at 22.5 bar. The superfluid response is simultaneously monitored with a torsional oscillator. A slightly rounded heat capacity peak, 65 mu K in width, is observed at the ^3He-aerogel superfluid transition, T_{ca}. Subtracting the bulk ^3He contribution, the heat capacity shows a Fermi-liquid form above T_{ca}. The heat capacity attributed to superfluid within the aerogel can be fit with a rounded BCS form, and accounts for 0.30 of the non-bulk fluid in the aerogel, indicating a substantial reduction in the superfluid order parameter consistent with earlier superfluid density measurements.Comment: 4 pages, 5 figure

Melting of the classical bilayer Wigner crystal: influence of the lattice symmetry

The melting transition of the five different lattices of a bilayer crystal is studied using the Monte-Carlo technique. We found the surprising result that the square lattice has a substantial larger melting temperature as compared to the other lattice structures, which is a consequence of the specific topology of the temperature induced defects. A new melting criterion is formulated which we show to be universal for bilayers as well as for single layer crystals.Comment: 4 pages, 5 figures (postscript files). Accepted in Physical Review Letter