Research on digital transducer principles. Volume 7 - Dielectric properties of thin polymer films, 1 July 1967 - 30 June 1968

Dielectric properties of thin films of polymerized oil-metal-silicon structure

Fermi Surface Nesting and Nanoscale Fluctuating Charge/Orbital Ordering in Colossal Magnetoresistive Oxides

We used high resolution angle-resolved photoemission spectroscopy to reveal the Fermi surface and key transport parameters of the metallic state of the layered Colossal Magnetoresistive (CMR) oxide La1.2Sr1.8Mn2O7. With these parameters the calculated in-plane conductivity is nearly one order of magnitude larger than the measured DC conductivity. This discrepancy can be accounted for by including the pseudogap which removes at least 90% of the spectral weight at the Fermi energy. Key to the pseudogap and many other properties are the parallel straight Fermi surface sections which are highly susceptible to nesting instabilities. These nesting instabilities produce nanoscale fluctuating charge/orbital modulations which cooperate with Jahn-Teller distortions and compete with the electron itinerancy favored by double exchange

Towards IoT Entrepreneurship: A Preliminary Investigation

With the rapid developments of Internet of Things (IoT), IoT entrepreneurship becomes a much-interested topic of research. While there is lack of relevant scholarly work, to bridge the gap, this research-in-progress, as a preliminary investigation, aims at exploring cross-disciplinary literature along with industrial dynamics, in anticipation of developing a framework for important research issues related to IoT entrepreneurship and opportunities

Atomistic Simulations of Ge on Amorphous Silica Substrates

High-quality Ge substrates have numerous applications, including high-efficiency III-V multijunction solar cells and photodetectors. But the high cost of single-crystalline Ge makes the use of Ge-on-Si virtual substrates more practical for device fabrication. However, the lattice mismatch between Ge and Si leads to a highly strained Ge layer when grown directly on the Si lattice. The high mismatch strain unavoidably leads to defects, primarily dislocations, that degrade the Ge film quality. Several approaches for mitigating these defects have been proposed, including selective epitaxial growth (SEG), in which one employs an amorphous layer (most often SiO2) as a mask to reduce the epitaxial contact between the Ge and Si lattices to lower the mismatch strain. SEG has been demonstrated to successfully produce high-quality Ge films on Si, although defects are not fully eliminated. Further improvements will require quantitative understanding of the underlying atomic-scale mechanisms. In this work, we present a computational framework to atomistically model the components of the SEG system (Si/SiO2/Ge). The model is validated by comparing predictions to experimental observations and ab initio calculations of various properties related to crystalline Si and Ge and amorphous SiO2, as well as combinations of these materials. The framework is then applied to study in detail the deposition of Ge on amorphous SiO2. It is shown that the simulations are able to access experimentally meaningful deposition conditions and reproduce several quantities related to the island size distribution. We then extend our simulation framework for deposition to include coarse projective integration (CPI). CPI is a multiscale modeling technique well-suited for situations, like atomic deposition, in which a system exhibits fast, stochastic processes, superposed onto slowly-evolving dynamics. In particular, we demonstrate an approach for generating atomistic configurations from limited knowledge of an island size distribution, which represents one of the key challenges in applying CPI to atomistic deposition. The results generated here should be easily adaptable to other deposition systems

Statistical multi-moment bifurcations in random delay coupled swarms

We study the effects of discrete, randomly distributed time delays on the dynamics of a coupled system of self-propelling particles. Bifurcation analysis on a mean field approximation of the system reveals that the system possesses patterns with certain universal characteristics that depend on distinguished moments of the time delay distribution. Specifically, we show both theoretically and numerically that although bifurcations of simple patterns, such as translations, change stability only as a function of the first moment of the time delay distribution, more complex patterns arising from Hopf bifurcations depend on all of the moments