30,008 research outputs found

    Evolution in range expansions with competition at rough boundaries.

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    When a biological population expands into new territory, genetic drift develops an enormous influence on evolution at the propagating front. In such range expansion processes, fluctuations in allele frequencies occur through stochastic spatial wandering of both genetic lineages and the boundaries between genetically segregated sectors. Laboratory experiments on microbial range expansions have shown that this stochastic wandering, transverse to the front, is superdiffusive due to the front's growing roughness, implying much faster loss of genetic diversity than predicted by simple flat front diffusive models. We study the evolutionary consequences of this superdiffusive wandering using two complementary numerical models of range expansions: the stepping stone model, and a new interpretation of the model of directed paths in random media, in the context of a roughening population front. Through these approaches we compute statistics for the times since common ancestry for pairs of individuals with a given spatial separation at the front, and we explore how environmental heterogeneities can locally suppress these superdiffusive fluctuations

    Anisotropic charge dynamics in detwinned Ba(Fe1x_{1-x}Cox_x)2_2As2_2

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    We investigate the optical conductivity as a function of temperature with light polarized along the in-plane orthorhombic aa- and bb-axes of Ba(Fe1x_{1-x}Cox_x)2_2As2_2 for xx=0 and 2.5%\% under uniaxial pressure. The charge dynamics at low frequencies on these detwinned, single domain compounds tracks the anisotropic dcdc transport properties across their structural and magnetic phase transitions. Our findings allow us to estimate the dichroism, which extends to relatively high frequencies. These results are consistent with a scenario in which orbital order plays a significant role in the tetragonal-to-orthorhombic structural transition

    GaAs monolithic frequency doublers with series connected varactor diodes

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    GaAs monolithic frequency doublers using series connected varactor diodes have been fabricated for the first time. Output powers of 150 mW at 36.9 GHz with 24% efficiency and 300 mW at 24.8 GHz with 18% efficiency have been obtained. Peak efficiencies of 35% at output power levels near 100 mW have been achieved at both frequencies. Both K-band and Ka-band frequency doublers are derived from a lower power, single-diode design by series connection of two diodes and scaling to achieve different power and frequency specifications. Their fabrication was accomplished using the same process sequence
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