Flow field predictions for a slab delta wing at incidence

Theoretical results are presented for the structure of the hypersonic flow field of a blunt slab delta wing at moderately high angle of attack. Special attention is devoted to the interaction between the boundary layer and the inviscid entropy layer. The results are compared with experimental data. The three-dimensional inviscid flow is computed numerically by a marching finite difference method. Attention is concentrated on the windward side of the delta wing, where detailed comparisons are made with the data for shock shape and surface pressure distributions. Surface streamlines are generated, and used in the boundary layer analysis. The three-dimensional laminar boundary layer is computed numerically using a specially-developed technique based on small cross-flow in streamline coordinates. In the rear sections of the wing the boundary layer decreases drastically in the spanwise direction, so that it is still submerged in the entropy layer at the centerline, but surpasses it near the leading edge. Predicted heat transfer distributions are compared with experimental data

Magnetically-induced reconstructions of the ground state in a few-electron Si quantum dot

We report unexpected fluctuations in the positions of Coulomb blockade peaks at high magnetic fields in a small Si quantum dot. The fluctuations have a distinctive saw-tooth pattern: as a function of magnetic field, linear shifts of peak positions are compensated by abrupt jumps in the opposite direction. The linear shifts have large slopes, suggesting formation of the ground state with a non-zero angular momentum. The value of the momentum is found to be well defined, despite the absence of the rotational symmetry in the dot.Comment: 5 pages, 4 figures, accepted to PR

Double-dot charge transport in Si single electron/hole transistors

We studied transport through ultra-small Si quantum dot transistors fabricated from silicon-on-insulator wafers. At high temperatures, 4K<T<100K, the devices show single-electron or single-hole transport through the lithographically defined dot. At T<4K, current through the devices is characterized by multidot transport. From the analysis of the transport in samples with double-dot characteristics, we conclude that extra dots are formed inside the thermally grown gate oxide which surrounds the lithographically defined dot.Comment: 4 pages, 5 figures, to appear in Appl. Phys. Let

Towards ultra-high resolution 3D reconstruction of a whole rat brain from 3D-PLI data

3D reconstruction of the fiber connectivity of the rat brain at microscopic scale enables gaining detailed insight about the complex structural organization of the brain. We introduce a new method for registration and 3D reconstruction of high- and ultra-high resolution (64 $\mu$m and 1.3 $\mu$m pixel size) histological images of a Wistar rat brain acquired by 3D polarized light imaging (3D-PLI). Our method exploits multi-scale and multi-modal 3D-PLI data up to cellular resolution. We propose a new feature transform-based similarity measure and a weighted regularization scheme for accurate and robust non-rigid registration. To transform the 1.3 $\mu$m ultra-high resolution data to the reference blockface images a feature-based registration method followed by a non-rigid registration is proposed. Our approach has been successfully applied to 278 histological sections of a rat brain and the performance has been quantitatively evaluated using manually placed landmarks by an expert.Comment: 9 pages, Accepted at 2nd International Workshop on Connectomics in NeuroImaging (CNI), MICCAI'201

Tau Polarizations in the Three-body Slepton Decays with Stau as the NLSP

In the gauge-mediated supersymmetry breaking models with scalar tau as the next-to-lightest supersymmetric particle, a scalar lepton may decay dominantly into its superpartner, tau lepton, and the lightest scalar tau particle. We give detailed formulas for the three-body decay amplitudes and the polarization asymmetry of the outgoing tau lepton . We find that the tau polarizations are sensitive to the model parameters such as the stau mixing angle, the neutralino to slepton mass ratio and the neutralino mixing effect.Comment: 13 pages, 5 figures, RevTe

In-situ integrated processing and characterization of thin films of high temperature superconductors, dielectrics and semiconductors by MOCVD

In this strategy of depositing the basic building blocks of superconductors, semiconductors, and dielectric having common elements, researchers deposited superconducting films of Y-Ba-Cu-O, semiconductor films of Cu2O, and dielectric films of BaF2 and Y2O3 by metal oxide chemical vapor deposition (MOCVD). By switching source materials entering the chamber, and by using direct writting capability, complex device structures like three-terminal hybrid semiconductors/superconductors transistors can be fabricated. The Y-Ba-Cu-O superconducting thin films on BaF2/YSZ substrates show a T(sub c) of 80 K and are textured with most of the grains having their c-axis or a-axis perpendicular to the substrate. Electrical characteristics as well as structural characteristics of superconductors and related materials obtained by x-ray defraction, electron microscopy, and energy dispersive x-ray analysis are discussed

In-situ integrated processing and characterization of thin films of high temperature superconductors, dielectrics and semiconductors by MOCVD

In this strategy of depositing the basic building blocks of superconductors, semiconductors, and dielectrics having common elements, researchers deposited superconducting films of Y-Ba-Cu-O, semiconductor films of Cu2O, and dielectric films of BaF2 and Y2O3 by metal oxide chemical vapor deposition (MOCVD). By switching source materials entering the chamber, and by using direct writing capability, complex device structures like three terminal hybrid semiconductor/superconductor transistors can be fabricated. The Y-Ba-Cu-O superconducting thin films on BaF2/YSZ substrates show a T(sub c) of 80 K and are textured with most of the grains having their c-axis or a-axis perpendicular to the substrate. Electrical characteristics as well as structural characteristics of superconductors and related materials obtained by x-ray deffraction, electron microscopy, and energy dispersive x-ray analysis are discussed