Space charge and charge trapping characteristics of cross-linked polyethylene subjected to ac electric stresses

This paper reports on the result of space charge evolution in cross-linked polyethylene (XLPE) planar samples of approximately 220 ?m thick. The space charge measurement technique used in this study is the PEA method. There are two phases to this experiment. In the first phase, the samples were subjected to dc 30 kVdc/mm and ac (sinusoidal) electric stress level of 30 kVpk/mm at frequencies of 1 Hz, 10 Hz and 50 Hz ac. In addition, ac space charge under 30 kVrms/mm and 60 kVpk/mm electric stress at 50 Hz was also investigated. The volts off results showed that the amount of charge trapped in XLPE sample under dc electric stress is significantly bigger than samples under ac stress even when the applied ac stresses are substantially higher. The second phase of the experiment involves studying the dc space charge evolution in samples that were tested under ac stress during the first phase of the experiment. Ac ageing causes positive charge to become more dominant over negative charge. It was also discovered that ac ageing creates deeper traps, particularly for negative charge. This paper also gave a brief overview of the data processing methods used to analyse space charge under ac electric stress

Si/Ge hole-tunneling double-barrier resonant tunneling diodes formed on sputtered flat Ge layers

We have demonstrated Si/Ge hole-tunneling double-barrier resonant tunneling diodes (RTDs) formed on flat Ge layers with a relaxation rate of 89% by our proposed method; in this method, the flat Ge layers can be directly formed on highly B-doped Si(001) substrates using our proposed sputter epitaxy method. The RTDs exhibit clear negative differential resistance effects in the static current–voltage (I–V) curves at room temperature. The quantized energy level estimation suggests that resonance peaks that appeared in the I–V curves are attributed to hole tunneling through the first heavy- and light-hole energy levels

A Bibliometric Review on Risk Management and Building Information Modeling for International Construction

International construction is complicated and involves high risks. However, with the development of technological innovation, Building Information Modeling (BIM) emerged and seems to be able to address certain risks. To understand BIM applications in risk management for international construction, a state-of-the-art review is required. Therefore, this paper aims to identify the research trends and opportunities for risk management in BIM-enabled international construction by reviewing 526 peer-reviewed journal articles for the years 2007-2017. Thus five steps of bibliometric analysis were conducted based on the proposed frameworks of BIM risk management in international construction (BIM-RM-INTL). The results show that the popularization of BIM not only attracts all stakeholders' interests but also brings some risks. For example, financial factors are hard to detect and control through BIM, information loss during transmission stands out, and BIM has no unified standards and regulations for international construction. The research has mapped existing research results and their relationships for future risk management in BIM-enabled international construction

DEVELOPMENT OF A UNIFIED OPEN E-LOGISTICS STANDARDS DIFFUSION MODEL FOR MANUFACTURING SUPPLY CHAIN INTEGRATIONS

Open E-Logistics Standards (OELS) is important to facilitate the integration of the supply chain. In OELS, the transmission and the manipulation of data are governed by open data and process standards that define their format, structure, and the semantics of data flow between trading partners. Despite the significant investments made by governments and leading firms, there remain concerns about OELS’ slow development progress and low adoption rates. The potential failure of OELS represents a significant stumbling block for governments and supply chain practitioners who have envisioned a globalized supply chain network electronically enabled by OELS. Researchers are also concerned about the inadequate models that are used to explain and understand the adoption of OELS. Although analysing adopter configurations in what is known as configuration analysis has been examined in disciplines related to science and economics, its application in the study of OELS remains sparse. This research aims to integrate multiple theoretical views, and apply configuration analysis with an improved methodological approach in order to examine OELS diffusion decisions and processes. The project will result in a new algorithm integrating structural equation modelling and neural network, and a decision support system which helps firms improve their OELS adoption decision

Engineering of E. coli for increased production of Llactic acid

No Abstrac

Improvement of dielectric loss of doped Ba0.5Sr0.5TiO3 thin films for tunable microwave devices

Al2O3-Ba0.5Sr0.5TiO3 (Al2O3-BST) thin films, with different Al2O3 contents, were deposited on (100) LaAlO3 substrate by pulsed laser deposition (PLD) technique. The Al2O3-BST films was demosnstrated to be a suitable systems to fabricate ferroelectric thin films with low dielectric loss and higher figure of merit for tunable microwave devices. Pure BST thin films were also fabricated for comparison purpose. The films' structure and morphology were analyzed by X-ray diffractiopn and scanning electron microscopy, respectively; nad showed that the surface roughness for the Al2O3-BST films increased with the Al2O3 content. Apart from that, the broadening in the intensity peak in XRD result indicating the grain size of the Al2O3-BST films reduced with the increasing of Al2O3 dopant. We measured the dielctric properties of Al2O3-BST films with a home-made non-destructive dual resonator method at frequency ~ 7.7 GHZ. The effect of doped Al2O3 into BST thin films significantly reduced the dielectric constant, dielectric loss and tunability compare to pure BST thin film. Our result shows the figure of merit (K), used to compare the films with varied dielectric properties, increased with the Al2O3 content. Therefore Al2O3-BST films show the potential to be exploited in tunable microwave devices.Comment: 8 pages, 4 figures, 1 table. Accepted & tentatively for Feb 15 2004 issue, Journal of Applied Physic

Life Cycle Aware Computing: Reusing Silicon Technology

Despite the high costs associated with processor manufacturing, the typical chip is used for only a fraction of its expected lifetime. Reusing processors would create a food chain of electronic devices that amortizes the energy required to build chips over several computing generations

Lepton flavor violating semileptonic τ\tau decays τ→lP(V)\tau\to lP(V) in a topcolor scenario

The contributions of the neutral top-pion $\pi_{t}^{0}$ and the non-universal gauge boson $Z'$ predicted by topcolor scenario to the lepton flavor violating $(LFV)$ semileptonic $\tau$ decays $\tau\to lP(V)$ $(P=\pi^{0}, \eta, \eta'$ and $V=\rho^{0}, \phi)$ are discussed. We find that the contributions of $Z'$ to these decay processes are generally larger than those from $\pi_{t}^{0}$. $\pi_{t}^{0}$ can only make the value of the branching ratio $Br(\tau\to lP)$ in the range of 1$\times10^{-11}$ $\sim$ 1$\times10^{-16}$, which is far below the sensitivity of foreseeable experiments. With reasonable values of the free parameters, the non-universal gauge boson $Z'$ can make the value of the branching ratio $Br(\tau^{-}\to \mu^{-}\phi)$ reach 1$\times10^{-7}$, which might approach the observable threshold of near-future experiments.Comment: 15 pages. Discussions added, some typos correcte

A scalar field instability of rotating and charged black holes in (4+1)-dimensional Anti-de Sitter space-time

We study the stability of static as well as of rotating and charged black holes in (4+1)-dimensional Anti-de Sitter space-time which possess spherical horizon topology. We observe a non-linear instability related to the condensation of a charged, tachyonic scalar field and construct "hairy" black hole solutions of the full system of coupled Einstein, Maxwell and scalar field equations. We observe that the limiting solution for small horizon radius is either a hairy soliton solution or a singular solution that is not a regular extremal solution. Within the context of the gauge/gravity duality the condensation of the scalar field describes a holographic conductor/superconductor phase transition on the surface of a sphere.Comment: 16 pages including 8 figures, v2: discussion on soliton solutions extended; v3: matches version accepted for publication in JHE

PT-Symmetric Electronics

We show both theoretically and experimentally that a pair of inductively coupled active LRC circuits (dimer), one with amplification and another with an equivalent amount of attenuation, display all the features which characterize a wide class of non-Hermitian systems which commute with the joint parity-time PT operator: typical normal modes, temporal evolution, and scattering processes. Utilizing a Liouvilian formulation, we can define an underlying PT-symmetric Hamiltonian, which provides important insight for understanding the behavior of the system. When the PT-dimer is coupled to transmission lines, the resulting scattering signal reveals novel features which reflect the PT-symmetry of the scattering target. Specifically we show that the device can show two different behaviors simultaneously, an amplifier or an absorber, depending on the direction and phase relation of the interrogating waves. Having an exact theory, and due to its relative experimental simplicity, PT-symmetric electronics offers new insights into the properties of PT-symmetric systems which are at the forefront of the research in mathematical physics and related fields.Comment: 17 pages, 7 figure