Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer

AlxGa1-xN/GaN superlattice electron blocking layers (EBLs) with gradually decreasing Al composition toward the p-type GaN layer are introduced to GaInN-based high-power light-emitting diodes (LEDs). GaInN/GaN multiple quantum well LEDs with 5- and 9-period Al-composition-graded AlxGa1-xN/GaN EBL show comparable operating voltage, higher efficiency as well as less efficiency droop than LEDs having conventional bulk AlGaN EBL, which is attributed to the superlattice doping effect, enhanced hole injection into the active region, and reduced potential drop in the EBL by grading Al compositions. Simulation results reveal a reduction in electron leakage for the superlattice EBL, in agreement with experimental results. (C) 2013 AIP Publishing LLC.open1133sciescopu

Structure and dielectric properties of cubic Bi<inf>2</inf>(Zn <inf>1/3</inf>Ta<inf>2/3</inf>)<inf>2</inf> O<inf>7</inf> thin films

Pyrochlore Bi2(Zn1/3Ta2/3)2 O7 (BZT) films were prepared by pulsed laser deposition on Pt/TiO2/SiO2/Si substrates. In contrast to bulk monoclinic BZT ceramics, the BZT films have a cubic structure mediated by an interfacial layer. The dielectric properties of the cubic BZT films [ε∼177, temperature coefficient of capacitance (TCC) ∼-170 ppm/°C] are much different from those of monoclinic BZT ceramics (ε∼61, TCC ∼+60 ppm/°C). Increasing the thickness of the BZT films returns the crystal structure to the monoclinic phase, which allows the dielectric properties of the BZT films to be tuned without changing their chemical composition. © 2009 American Institute of Physics

Reversible change in electrical and optical properties in epitaxially grown Al-doped ZnO thin films

Aluminum-doped ZnO (AZO) films were epitaxially grown on sapphire (0001) substrates using pulsed laser deposition. As-deposited AZO films had a low resistivity of 8.01× 10-4 Ω cm. However, after annealing at 450 °C in air, the electrical resistivity of the AZO films increased to 1.97× 10-1 Ω cm because of a decrease in the carrier concentration. Subsequent annealing of the air-annealed AZO films in H2 recovered the electrical conductivity of the AZO films. In addition, the conductivity change was reversible upon repeated air and H2 annealing. A photoluminescence study showed that oxygen interstitial (Oi′) is a critical material parameter allowing for the reversible control of the electrical conducting properties of AZO films. © 2008 American Institute of Physics

Effect of surfactant concentration variation on the thermoelectric properties of mesoporous ZnO

The electrical and thermal conductivities and the Seebeck coefficient of mesoporous ZnO thin films were investigated to determine the change of their thermoelectric properties by controlling surfactant concentration in the mesoporous ZnO films, because the thermoelectric properties of mesoporous ZnO films can be influenced by the porosity of the mesoporous structures, which is primarily determined by surfactant concentration in the films. Mesoporous ZnO thin films were successfully synthesized by using sol-gel and evaporation-induced self-assembly processes. Zinc acetate dihydrate and Brij-76 were used as the starting material and pore structure-forming template, respectively. The porosity of mesoporous ZnO thin films increased from 29% to 40% with increasing surfactant molar ratio. Porosity can be easily altered by controlling the molar ratio of surfactant/precursor. The electrical and thermal conductivity and Seebeck coefficients showed a close correlation with the porosity of the films, indicating that the thermoelectric properties of thin films can be changed by altering their porosity. Mesoporous ZnO thin films with the highest porosity had the best thermoelectric properties (the lowest thermal conductivity and the highest Seebeck coefficient) of the films examined. © 2013 Min-Hee Hong et al

Seed-layer mediated orientation evolution in dielectric Bi-Zn-Ti-Nb-O thin films

Highly (hhh) -oriented pyrochlore Bi-Zn-Ti-Nb-O (BZTN) thin films were fabricated via metal-organic decomposition using orientation template layers. The preferred orientation was ascribed to the interfacial layer, the lattice parameter of which is similar to BZTN. High-resolution transmission electron microscopy supported that the interfacial layer consists of Bi and Pt. The (hhh) -oriented thin films exhibited a highly insulating nature enabling feasible applications in electronic devices, particularly voltage tunable application. The BZTN thin films did not show any apparent dielectric anisotropy and the slightly enhanced dielectric properties were discussed in connection to the internal stress and the grain boundary effect. © 2007 American Institute of Physics

Effect of amorphous Si quantum-dot size on 1.54 μm luminescence of Er

The role of the size of amorphous silicon quantum dots in the Er luminescence at 1.54 μm was investigated. As the dot size was increased, more Er ions were located near one dot due to its large surface area and more Er ions interacted with other ones. This Er-Er interaction caused a weak photoluminescence intensity, despite the increase in the effective excitation cross section. The critical dot size needed to take advantage of the positive effect on Er luminescence is considered to be about 2.0 nm, below which a small dot is very effective in the efficient luminescence of Er. © 2005 The Electrochemical Society. All rights reserved

Synchronized dynamics of cortical neurons with time-delay feedback

The dynamics of three mutually coupled cortical neurons with time delays in the coupling are explored numerically and analytically. The neurons are coupled in a line, with the middle neuron sending a somewhat stronger projection to the outer neurons than the feedback it receives, to model for instance the relay of a signal from primary to higher cortical areas. For a given coupling architecture, the delays introduce correlations in the time series at the time-scale of the delay. It was found that the middle neuron leads the outer ones by the delay time, while the outer neurons are synchronized with zero lag times. Synchronization is found to be highly dependent on the synaptic time constant, with faster synapses increasing both the degree of synchronization and the firing rate. Analysis shows that presynaptic input during the interspike interval stabilizes the synchronous state, even for arbitrarily weak coupling, and independent of the initial phase. The finding may be of significance to synchronization of large groups of cells in the cortex that are spatially distanced from each other.Comment: 21 pages, 11 figure

Importance of Ethnicity, CYP2B6 and ABCB1 Genotype for Efavirenz Pharmacokinetics and Treatment Outcomes: A Parallel-group Prospective Cohort Study in two sub-Saharan Africa Populations.

We evaluated the importance of ethnicity and pharmacogenetic variations in determining efavirenz pharmacokinetics, auto-induction and immunological outcomes in two African populations. ART naïve HIV patients from Ethiopia (n = 285) and Tanzania (n = 209) were prospectively enrolled in parallel to start efavirenz based HAART. CD4+ cell counts were determined at baseline, 12, 24 and 48 weeks. Plasma and intracellular efavirenz and 8-hydroxyefvairenz concentrations were determined at week 4 and 16. Genotyping for common functional CYP2B6, CYP3A5, ABCB1, UGT2B7 and SLCO1B1 variant alleles were done. Patient country, CYP2B6*6 and ABCB1 c.4036A>G (rs3842A>G) genotype were significant predictors of plasma and intracellular efavirenz concentration. CYP2B6*6 and ABCB1 c.4036A>G (rs3842) genotype were significantly associated with higher plasma efavirenz concentration and their allele frequencies were significantly higher in Tanzanians than Ethiopians. Tanzanians displayed significantly higher efavirenz plasma concentration at week 4 (p<0.0002) and week 16 (p = 0.006) compared to Ethiopians. Efavirenz plasma concentrations remained significantly higher in Tanzanians even after controlling for the effect of CYP2B6*6 and ABCB1 c.4036A>G genotype. Within country analyses indicated a significant decrease in the mean plasma efavirenz concentration by week 16 compared to week 4 in Tanzanians (p = 0.006), whereas no significant differences in plasma concentration over time was observed in Ethiopians (p = 0.84). Intracellular efavirenz concentration and patient country were significant predictors of CD4 gain during HAART. We report substantial differences in efavirenz pharmacokinetics, extent of auto-induction and immunologic recovery between Ethiopian and Tanzanian HIV patients, partly but not solely, due to pharmacogenetic variations. The observed inter-ethnic variations in efavirenz plasma exposure may possibly result in varying clinical treatment outcome or adverse event profiles between populations