Ferroelectric field effect induced charge carrier transport modulation at quantum dot solar cell heterojunction interface

Inherent unidealistic properties associated with materials and device structures inevitably limit the performance of photovoltaic devices. To overcome the inherent limit, judicious use of ferroelectric materials has been introduced. Here, we demonstrate modulations of charge carrier transport at the heterojunction interface with respect to polarities of electric dipoles. Attributed to an additional electric field by the ferroelectric effect, a built-in potential at the junction increases, leading to enhanced charge carrier transport, reduced charge recombination, and, consequently, enhanced power conversion efficiency of lead sulfide quantum dot solar cells. The coupling of the ferroelectric effect with the solar cell provides an important platform to further develop solution-processable flat panel solar cell technology

Quantum dots for hybrid energy harvesting: from integration to piezo-phototronics

Energy harvesting, which converts wasted environmental energy into electricity by utilizing various physical effects, hasattracted tremendous research interests as is one of the key technologies to realize advanced electronics in the future. In this review, we introduce recent progress in the field of hybrid energy harvesting technology. In particular, we focus on a quantum dots (QD)‐based hybrid energy harvesting device. Attributed to fascinating material properties that QD possess, employment of QDs into hybrid energy harvesting has shown great potential for independent and sustainable energy supply.First, an integration of a QD solar cell into a mechanical energy harvester is discussed to harness different types of environmental energy sources simultaneously. Second, a comprehensive explanation of a piezotronic and piezo‐phototronic effect is provided, which is followed by QD‐based piezo‐phototronic applications. Finally, we summarize recent progress that has been made in energy harvesting technology involving a photovoltaic and piezo/triboelectric effec

Mechanical transistors for logic-with-memory computing

As a potential revolutionary topic in future information processing, mechanical computing has gained tremendous attention for replacing or supplementing conventional electronics vulnerable to power outages, security attacks, and harsh environments. Despite its potential for constructing intelligent matter towards nonclassical computing systems beyond the von Neumann architecture, most works on mechanical computing demonstrated that the ad hoc design of simple logic gates cannot fully realize a universal mechanical processing framework involving interconnected arithmetic logic components and memory. However, such a logic-with-memory computing architecture is critical for complex and persistent state-dependent computations such as sequential logic. Here we propose a mechanical transistor (M-Transistor), abstracting omnipresent temperatures as the input-output mechanical bits, which consists of a metamaterial thermal channel as the gate terminal driving a nonlinear bistable soft actuator to selectively connect the output terminal to two other variable thermal sources. This M-Transistor is an elementary unit to modularly form various combinational and sequential circuits, such as complex logic gates, registers (volatile memory), and long-term memories (non-volatile memory) with much fewer units than the electronic counterparts. Moreover, they can establish a universal processing core comprising an arithmetic circuit and a register in a compact, reprogrammable network involving periodic read, write, memory, and logic operations of the mechanical bits. Our work contributes to realizing a non-electric universal mechanical computing architecture that combines multidisciplinary engineering with structural mechanics, materials science, thermal engineering, physical intelligence, and computational science.Comment: 25 pages, 4 figures, Articl

Highly Monodispersed PbS Quantum Dots for Outstanding Cascaded-Junction Solar Cells.

High-performance cascaded-junction quantum dot solar cells (CJQDSCs) are fabricated from as-prepared highly monodispersed lead sulfide QDs. The cells have a high power conversion of 9.05% and a short-circuit current density of 32.51 mA cm-2. A reliable and effective stratagem for fabricating high-quality lead sulfide quantum dots (QD) is explored through a "monomer" concentration-controlled experiment. Robust QDSC performances with different band gaps are demonstrated from the as-proposed synthesis and processing stratagems. Various potential CJQDSCs can be envisioned from the band edge evolution of the QDs as a function of size and ligands reported here

Monolayer optical memory cells based on artificial trap-mediated charge storage and release.

Monolayer transition metal dichalcogenides are considered to be promising candidates for flexible and transparent optoelectronics applications due to their direct bandgap and strong light-matter interactions. Although several monolayer-based photodetectors have been demonstrated, single-layered optical memory devices suitable for high-quality image sensing have received little attention. Here we report a concept for monolayer MoS2 optoelectronic memory devices using artificially-structured charge trap layers through the functionalization of the monolayer/dielectric interfaces, leading to localized electronic states that serve as a basis for electrically-induced charge trapping and optically-mediated charge release. Our devices exhibit excellent photo-responsive memory characteristics with a large linear dynamic range of ∼4,700 (73.4 dB) coupled with a low OFF-state current (<4 pA), and a long storage lifetime of over 104 s. In addition, the multi-level detection of up to 8 optical states is successfully demonstrated. These results represent a significant step toward the development of future monolayer optoelectronic memory devices

Charge transport modulation of a flexible quantum dot solar cell using a piezoelectric effect

Colloidal quantum dots are promising materials for flexible solar cells, as they have a large absorption coefficient at visible and infrared wavelengths, a band gap that can be tuned across the solar spectrum, and compatibility with solution processing. However, the performance of flexible solar cells can be degraded by the loss of charge carriers due to recombination pathways that exist at a junction interface as well as the strained interface of the semiconducting layers. The modulation of the charge carrier transport by the piezoelectric effect is an effective way of resolving and improving the inherent material and structural defects. By inserting a porous piezoelectric poly(vinylidenefluoride‐trifluoroethylene) layer so as to generate a converging electric field, it is possible to modulate the junction properties and consequently enhance the charge carrier behavior at the junction. This study shows that due to a reduction in the recombination and an improvement in the carrier extraction, a 38% increase in the current density along with a concomitant increase of 37% in the power conversion efficiency of flexible quantum dots solar cells can be achieved by modulating the junction properties using the piezoelectric effect

Consecutive Junction-Induced Efficient Charge Separation Mechanisms for High-Performance MoS2/Quantum Dot Phototransistors.

Phototransistors that are based on a hybrid vertical heterojunction structure of two-dimensional (2D)/quantum dots (QDs) have recently attracted attention as a promising device architecture for enhancing the quantum efficiency of photodetectors. However, to optimize the device structure to allow for more efficient charge separation and transfer to the electrodes, a better understanding of the photophysical mechanisms that take place in these architectures is required. Here, we employ a novel concept involving the modulation of the built-in potential within the QD layers for creating a new hybrid MoS2/PbS QDs phototransistor with consecutive type II junctions. The effects of the built-in potential across the depletion region near the type II junction interface in the QD layers are found to improve the photoresponse as well as decrease the response times to 950 μs, which is the faster response time (by orders of magnitude) than that recorded for previously reported 2D/QD phototransistors. Also, by implementing an electric-field modulation of the MoS2 channel, our experimental results reveal that the detectivity can be as large as 1 × 1011 jones. This work demonstrates an important pathway toward designing hybrid phototransistors and mixed-dimensional van der Waals heterostructures.The research leading to these results has received funding from the European Research Council under the European Union’s Seventh Framework Programme (FP/2007−2013)/ERC Grant Agreement no. 340538. This work was also supported by the National Research Foundation of Korea (NRF) (2015M2A2A6A02045252) and Samsung Global Research Outreach (Samsung GRO) program. In addition, S.M.M. would like to thank The Royal Society for financial support

Highly monodispersed PbS quantum dots for outstanding cascaded-junction solar cells

High-performance cascaded-junction quantum dot solar cells (CJQDSCs) are fabricated from as-prepared highly monodispersed lead sulfide QDs. The cells have a high power conversion of 9.05% and a short-circuit current density of 32.51 mA cm–2. A reliable and effective stratagem for fabricating high-quality lead sulfide quantum dots (QD) is explored through a “monomer” concentration-controlled experiment. Robust QDSC performances with different band gaps are demonstrated from the as-proposed synthesis and processing stratagems. Various potential CJQDSCs can be envisioned from the band edge evolution of the QDs as a function of size and ligands reported here

Balancing charge carriertransport in a quantum dot P-N junction toward hysteresis-free high-performance solar cells

In a quantum dot solar cell (QDSC) that has an inverted structure, the QD layers form two different junctions between the electron transport layer (ETL) and the other semiconducting QD layer. Recent work on an inverted-structure QDSC has revealed that the junction between the QD layers is the dominant junction, rather than the junction between the ETL and the QD layers, which is in contrast to the conventional wisdom. However, to date, there have been a lack of systematic studies on the role and importance of the QD heterojunction structure on the behavior of the solar cell and the resulting device performance. In this study, we have systematically controlled the structure of the QD junction to balance charge transport, which demonstrates that the position of the junction has a significant effect on the hysteresis effect, fill factor, and solar cell performance and is attributed to balanced charge transport