294 research outputs found

    The band structure and Fermi surface of La0.6_{0.6}Sr0.4_{0.4}MnO3_{3} thin films studied by in-situ angle-resolved photoemission spectroscopy

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    We have performed an in situ angle-resolved photoemission spectroscopy (ARPES) on single-crystal surfaces of La0.6_{0.6}Sr0.4_{0.4}MnO3_{3} (LSMO) thin films grown on SrTiO3_{3} (001) substrates by laser molecular beam epitaxy, and investigated the electronic structure near the Fermi level (EFE_{F}). The experimental results were compared with the band-structure calculation based on LDA + UU. The band structure of LSMO thin films consists of several highly dispersive O 2pp derived bands in the binding energy range of 2.0 - 6.0 eV and Mn 3dd derived bands near EFE_{F}. ARPES spectra around the GammaGamma point show a dispersive band near EFE_{F} indicative of an electron pocket centered at the GammaGamma point, although it was not so clearly resolved as an electronlike pocket due to the suppression of spectral weight in the vicinity of EFE_{F}. Compared with the band-structure calculation, the observed conduction band is assigned to the Mn 3degde_{g} majority-spin band responsible for the half-metallic nature of LSMO. We have found that the estimated size of the Fermi surface is consistent with the prediction of the band-structure calculation, while the band width becomes significantly narrower than the calculation. Also, the intensity near EFE_{F} is strongly reduced. The origin of these discrepancies between the experiment and the calculation is discussed.Comment: 7 pages, 5 figure

    Madelung potentials and covalency effect in strained La1−x_{1-x}Srx_xMnO3_3 thin films studied by core-level photoemission spectroscopy

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    We have investigated the shifts of the core-level photoemission spectra of La0.6_{0.6}Sr0.4_{0.4}MnO3_3 thin films grown on three kinds of substrates, SrTiO3_3, (LaAlO3_3)0.3_{0.3}-(SrAl0.5_{0.5}Ta0.5_{0.5}O3_3)0.7_{0.7}, and LaAlO3_3. The experimental shifts of the La 4d and Sr 3d core levels are almost the same as the calculation, which we attribute to the absence of covalency effects on the Madelung potentials at these atomic sites due to the nearly ionic character of these atoms. On the other hand, the experimental shifts of the O 1s1s and Mn 2p2p core levels are negligibly small, in disagreement with the calculation. We consider that this is due to the strong covalent character of the Mn-O bonds.Comment: 4 pages, 5 figure

    In-situ photoemission study of Pr_{1-x}Ca_xMnO_3 epitaxial thin films with suppressed charge fluctuations

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    We have performed an {\it in-situ} photoemission study of Pr_{1-x}Ca_xMnO_3 (PCMO) thin films grown on LaAlO_3 (001) substrates and observed the effect of epitaxial strain on the electronic structure. We found that the chemical potential shifted monotonically with doping, unlike bulk PCMO, implying the disappearance of incommensurate charge fluctuations of bulk PCMO. In the valence-band spectra, we found a doping-induced energy shift toward the Fermi level (E_F) but there was no spectral weight transfer, which was observed in bulk PCMO. The gap at E_F was clearly seen in the experimental band dispersions determined by angle-resolved photoemission spectroscopy and could not be explained by the metallic band structure of the C-type antiferromagnetic state, probably due to localization of electrons along the ferromagnetic chain direction or due to another type of spin-orbital ordering.Comment: 5 pages, 4 figure

    Gradual Disappearance of the Fermi Surface near the Metal-Insulator Transition in La1−x_{1-x}Srx_{x}MnO3_{3}

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    We report the first observation of changes in the electronic structure of La1−x_{1-x}Srx_{x}MnO3_{3} (LSMO) across the filling-control metal-insulator (MI) transition by means of in situ angle-resolved photoemission spectroscopy (ARPES) of epitaxial thin films. The Fermi surface gradually disappears near the MI transition by transferring the spectral weight from the coherent band near the Fermi level (EFE_{F}) to the lower Hubbard band, whereas a pseudogap behavior also exists in the ARPES spectra in the close vicinity of EFE_{F} for the metallic LSMO. These results indicate that the spectral weight transfer derived from strong electron-electron interaction dominates the gap formation in LSMO associated with the filling-control MI transition.Comment: 11 pages, 4 figure

    Angle-resolved photoemission spectroscopy of perovskite-type transition-metal oxides and their analyses using tight-binding band structure

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    Nowadays it has become feasible to perform angle-resolved photoemission spectroscopy (ARPES) measurements of transition-metal oxides with three-dimensional perovskite structures owing to the availability of high-quality single crystals of bulk and epitaxial thin films. In this article, we review recent experimental results and interpretation of ARPES data using empirical tight-binding band-structure calculations. Results are presented for SrVO3_3 (SVO) bulk single crystals, and La1−x_{1-x}Srx_xFeO3_3 (LSFO) and La1−x_{1-x}Srx_xMnO3_3 (LSMO) thin films. In the case of SVO, from comparison of the experimental results with calculated surface electronic structure, we concluded that the obtained band dispersions reflect the bulk electronic structure. The experimental band structures of LSFO and LSMO were analyzed assuming the G-type antiferromagnetic state and the ferromagnetic state, respectively. We also demonstrated that the intrinsic uncertainty of the electron momentum perpendicular to the crystal surface is important for the interpretation of the ARPES results of three-dimensional materials.Comment: 25 pages, 12 figure

    Effect of strong localization of doped holes in angle-resolved photoemission spectra of La1−x_{1-x}Srx_xFeO3_3

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    We have performed an angle-resolved photoemission spectroscopy study of La0.6_{0.6}Sr0.4_{0.4}FeO3_3 using {\it in situ} prepared thin films and determined its band structure. The experimental band dispersions could be well explained by an empirical band structure assuming the G-type antiferromagnetic state. However, the Fe 3d bands were found to be shifted downward relative to the Fermi level (EFE_F) by ∼1\sim 1 eV compared with the calculation and to form a (pseudo)gap of ∼1\sim 1 eV at EFE_F. We attribute this observation to a strong localization effect of doped holes due to polaron formation.Comment: 5 pages, 5 figure

    Chemical potential shift and spectral weight transfer in Pr1−x_{1-x}Cax_xMnO3_3 revealed by photoemission spectroscopy

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    We have studied the chemical potential shift and changes in the electronic density of states near the Fermi level (EFE_F) as a function of carrier concentration in Pr1−x_{1-x}Cax_xMnO3_3 (PCMO, 0.2≤x≤0.650.2 \le x \le 0.65) through the measurements of photoemission spectra. The results showed that the chemical potential shift was suppressed for x \agt 0.3, where the charge exchange (CE)-type antiferromagnetic charge-ordered state appears at low temperatures. We consider this observation to be related to charge self-organization such as stripe formation on a microscopic scale in this composition range. Together with the previous observation of monotonous chemical potential shift in La1−x_{1-x}Srx_xMnO3_3, we conclude that the tendency toward the charge self-organization increases with decreasing bandwidth. In the valence band, spectral weight of the Mn 3dd ege_g electrons in PCMO was transferred from ∼\sim 1 eV below EFE_F to the region near EFE_F with hole doping, leading to a finite intensity at EFE_F even in the paramagnetic insulating phase for x \agt 0.3, probably related with the tendency toward charge self-organization. The finite intensity at EFE_F in spite of the insulating transport behavior is consistent with fluctuations involving ferromagnetic metallic states.Comment: 6 pages, 5 figure

    Suppression of the soybean cyst nematode, Heterodera glycines, by short-term field cultivation and soil incorporation of mung bean.

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    © Koninklijke Brill NV, Leiden, 2021. This is the accepted manuscript version of an article which has been published in final form at https://doi.org/10.1163/15685411-bja10042Our previous study using pots reported that short-term growth of mung bean (Vigna radiata) may be useful to decrease the density of the soybean cyst nematode (SCN), Heterodera glycines, in soil. The objective of this study was to determine whether short-term growth of mung bean and its incorporation by ploughing decreased SCN density in infested fields. Firstly, we did pot experiments to evaluate the optimum temperature and moisture for hatching in soil. SCN hatching was stimulated at 25 and 30°C and not at 20°C; however, it was stimulated at alternating temperature conditions between 20 and 25°C. Soil moisture levels with pF 2.76 or less were required to stimulate SCN hatch in soil. Field experiments were done in Saitama, Kanagawa and Nara Prefectures, Japan. SCN density was reduced by nearly half even in control plots, in which mung bean was not cultivated and ploughed, in Saitama and Nara Prefectures. However, SCN density was reduced by nearly 80% or more in the three Prefectures, except for one plot in Kanagawa, and the soil temperature and moisture conditions were kept at around 20-30°C and at <pF 2.8. Increase in yield of green soybean by SCN control was estimated at 350 kg (1000 m)−2. Overall, the present study revealed that short-term field cultivation of mung bean and ploughing was a profitable method to decrease SCN density in infested fields and thereby to increase yield of green soybean.Peer reviewedFinal Accepted Versio
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