Synthesis of Graphene-ZnO-Au Nanocomposites for Efficient Photocatalytic Reduction of Nitrobenzene

A simple hydrothermal method of preparing highly photocatalytic graphene-ZnO-Au nanocomposites (G-ZnO-Au NCs) has been developed. Zinc acetate and graphene oxide are reduced by catechin to form graphene-zinc oxide nanospheres (G-ZnO NSs; average diameter of (45.3 ± 3.7) nm) in the presence of ethylenediamine (EDA) as a stabilizing agent and gold nanorods (Au NRs) at 300 °C for 2 h. Then Au NRs are deposited onto as-formed G-ZnO NSs to form G-ZnO-Au NCs. Upon ultraviolet light activation, G-ZnO-Au NCs (4 mg mL^–1) in methanol generates electron–hole pairs. Methanol (hydroxyl group) assists in trapping holes, enabling photogenerated electrons to catalyze reduction of nitrobenzene (NB) to aniline with a yield of 97.8% during a reaction course of 140 min. The efficiency of G-ZnO-Au NCs is 3.5- and 4.5-fold higher than those provided by commercial TiO₂ and ZnO NSs, respectively. Surface assisted laser desorption/ionization mass spectrometry has been for the first time applied to detect the intermediates (nitrosobenzene and phenylhydroxylamine) and major product (aniline) of NB through photoelectrocatalytic or photocatalytic reactions. The result reveals that the reduction of NB to aniline is through nitrosobenzene to phenylhydroxylamine in the photoelectrocatalytic reaction, while via nitrosobenzene directly in the photocatalytic reaction. G-ZnO-Au NC photocatalyst holds great potential in removal of organic pollutants like NB and in the production of aniline

Nitrogen-Doped Graphene Sheets Grown by Chemical Vapor Deposition: Synthesis and Influence of Nitrogen Impurities on Carrier Transport

A significant advance toward achieving practical applications of graphene as a two-dimensional material in nanoelectronics would be provided by successful synthesis of both n-type and p-type doped graphene. However, reliable doping and a thorough understanding of carrier transport in the presence of charged impurities governed by ionized donors or acceptors in the graphene lattice are still lacking. Here we report experimental realization of few-layer nitrogen-doped (N-doped) graphene sheets by chemical vapor deposition of organic molecule 1,3,5-triazine on Cu metal catalyst. When reducing the growth temperature, the atomic percentage of nitrogen doping is raised from 2.1% to 5.6%. With increasing doping concentration, N-doped graphene sheet exhibits a crossover from p-type to n-type behavior accompanied by a strong enhancement of electron–hole transport asymmetry, manifesting the influence of incorporated nitrogen impurities. In addition, by analyzing the data of X-ray photoelectron spectroscopy, Raman spectroscopy, and electrical measurements, we show that pyridinic and pyrrolic N impurities play an important role in determining the transport behavior of carriers in our N-doped graphene sheets