42 research outputs found
Thermal stability of ultrasoft Fe–Zr–N films
The thermal stability of nanocrystalline ultrasoft magnetic (Fe98Zr2)1−xNx films with x = 0.10–0.25 was studied using thermal desorption spectrometry, positron beam analysis and high resolution transmission electron microscopy. The results demonstrate that grain growth during the heat treatment is accompanied by an increase of the free volume and nitrogen relocation and desorption. All these phenomena can drastically degrade the ultrasoft magnetic properties. The nitrogen desorption has already started at temperatures around 400 K. Nevertheless, most of the nitrogen leaves the sample at a temperature above 800 K. We found that nitrogen out-diffusion is significantly retarded compared with the prediction of the diffusion in bulk α-Fe. A qualitative model is proposed in which the nitrogen out-diffusion in nanocrystalline material is retarded by trapping at immobile defects, namely Zr atoms, and also by voids at grain boundaries. From a certain temperature, nitrogen migrates from the interior of the nanograins to the nanovoids at the grain boundaries and the out-diffusion to the outer surface is controlled by transport between the voids.
Positron annihilation and transmission electron microscopy study of the evolution of microstructure in cold-rolled and nitrided FeNiTi foils
Growth and properties of strained VOx thin films with controlled stoichiometry
We have succeeded in growing epitaxial films of rocksalt VOx on MgO(001)
substrates. The oxygen content as a function of oxygen flux was determined
using 18O2-RBS and the vanadium valence using XAS. The upper and lower
stoichiometry limits found are similar to the ones known for bulk material
(0.8<x<1.3). From the RHEED oscillation period a large number of vacancies for
both vanadium and oxygen were deduced, i.e. ~16% for stoichiometric VO. These
numbers are, surprisingly, very similar to those for bulk material and
consequently quite strain-insensitive. XAS measurements reveal that the
vacancies give rise to strong low symmetry ligand fields to be present. The
electrical conductivity of the films is much lower than the conductivity of
bulk samples which we attribute to a decrease in the direct overlap between t2g
orbitals in the coherently strained layers. The temperature dependence of the
conductivity is consistent with a variable range hopping mechanism.Comment: 12 pages, 16 figures included, revised versio