2 research outputs found
Unveiling the Growth Mechanism of MoS<sub>2</sub> with Chemical Vapor Deposition: From Two-Dimensional Planar Nucleation to Self-Seeding Nucleation
The deep understanding
of nucleation and growth mechanisms is fundamental
for the precise control of the size, layer number, and crystal quality
of two-dimensional (2D) transition-metal dichalcogenides (TMDs) with
the chemical vapor deposition (CVD) method. In this work, we present
a systematic spectroscopic study of CVD-grown MoS<sub>2</sub>, and
two types of MoS<sub>2</sub> flakes have been identified: one type
of flake contains a central nanoparticle with the multilayer MoS<sub>2</sub> structure, and the other is dominated by triangular flakes
with monolayer or bilayer structures. Our results demonstrate that
two types of flakes can be tuned by changing the growth temperature
and carrier-gas flux, which originates from their different nucleation
mechanisms that essentially depends on the concentration of MoO<sub>3–<i>x</i></sub> and S vapor precursors: a lower
reactant concentration facilitates the 2D planar nucleation that leads
to the monolayer/bilayer MoS<sub>2</sub> and a higher reactant concentration
induces the self-seeding nucleation which easily produces few-layer
and multilayer MoS<sub>2</sub>. The reactant-concentration dependence
of nucleation can be used to control the growth of MoS<sub>2</sub> and understand the growth mechanism of other TMDs
Atomic Mechanism of Electrocatalytically Active Co–N Complexes in Graphene Basal Plane for Oxygen Reduction Reaction
Superior
catalytic activity and high chemical stability of inexpensive
electrocatalysts for the oxygen reduction reaction (ORR) are crucial
to the large-scale practical application of fuel cells. The nonprecious
metal/N modified graphene electrocatalysts are regarded as one of
potential candidates, and the further enhancement of their catalytic
activity depends on improving active reaction sites at not only graphene
edges but also its basal plane. Herein, the ORR mechanism and reaction
pathways of Co–N co-doping onto the graphene basal plane have
been studied by using first-principles calculations and <i>ab
initio</i> molecular dynamics simulations. Compared to singly
N-doped and Co-doped graphenes, the Co–N co-doped graphene
surface exhibits superior ORR activity and the selectivity toward
a four-electron reduction pathway. The result originates from catalytic
sites of the graphene surface being modified by the hybridization
between Co 3d states and N 2p states, resulting in the catalyst with
a moderate binding ability to oxygenated intermediates. Hence, introducing
the Co–N<sub>4</sub> complex onto the graphene basal plane
facilitates the activation of O<sub>2</sub> dissociation and the desorption
of H<sub>2</sub>O during the ORR, which is responsible for the electrocatalyst
with a smaller ORR overpotential (∼1.0 eV) that is lower than
that of Co-doped graphene by 0.93 eV. Our results suggest that the
Co–N co-doped graphene is able to compete against platinum-based
electrocatalysts, and the greater efficient electrocatalysts can be
realized by carefully optimizing the coupling between transition metal
and nonmetallic dopants in the graphene basal plane