Ballistic electron emission microscopy spectroscopy study of AlSb and InAs/AlSb superlattice barriers

Due to its large band gap, AlSb is often used as a barrier in antimonide heterostructure devices. However, its transport characteristics are not totally clear. We have employed ballistic electron emission microscopy (BEEM) to directly probe AlSb barriers as well as more complicated structures such as selectively doped n-type InAs/AlSb superlattices. The aforementioned structures were grown by molecular beam epitaxy on GaSb substrates. A 100 Å InAs or 50 Å GaSb capping layer was used to prevent surface oxidation from ex situ processing. Different substrate and capping layer combinations were explored to suppress background current and maximize transport of BEEM current. The samples were finished with a sputter deposited 100 Å metal layer so that the final BEEM structure was of the form of a metal/capping layer/semiconductor. Of note is that we have found that hole current contributed significantly to BEEM noise due to type II band alignment in the antimonide system. BEEM data revealed that the electron barrier height of Al/AlSb centered around 1.17 eV, which was attributed to transport through the conduction band minimum near the AlSb X point. Variation in the BEEM threshold indicated unevenness at the Al/AlSb interface. The metal on semiconductor barrier height was too low for the superlattice to allow consistent probing by BEEM spectroscopy. However, the superlattice BEEM signal was elevated above the background noise after repeated stressing of the metal surface. A BEEM threshold of 0.8 eV was observed for the Au/24 Å period superlattice system after the stress treatment

Design of a smart turning tool with application to in-process cutting force measurement in ultraprecision and micro cutting

In modern micromachining, there is a need to measure and monitor certain machining process parameters in process so as to detect tool wear in real time, to optimize the process parameters setup, and to render the machining process some level of smartness and intelligence. This paper presents the innovative design of a smart turning tool using two pieces of piezoelectric films to measure cutting and feed force in real time. The tool was tested on its performance through the calibration and cutting trials against the commercial dynamometer. The results show the smart turning tool has achieved the performance as designed

Effect of cylindrical geometry on the wet thermal oxidation of AlAs

We have investigated the wet thermal oxidation of AlAs in cylindrical geometry, a typical configuration for vertical-cavity surface-emitting lasers. Through both experiment and theoretical calculations, we demonstrate a significantly different time dependence for circular mesas from what has been reported in the literature both in studies of stripes and in a study of circular mesas. We attribute this different time dependence to the effect of geometry on the oxidation

Strain in wet thermally oxidized square and circular mesas

In this paper, we report the observation, through optical microscopy, of drumhead-like patterns in square and circular mesas which have been wet thermally oxidized to completion. Micro-Raman spectroscopy measurements are used to show that these patterns roughly correspond to variations in strain induced in surrounding semiconductor layers by the oxidation process. In addition, the patterns have a specific orientation with respect to the crystallographic axes of the semiconductor. A crystallographic dependence of the oxidation process itself is demonstrated and used to explain the orientation of the drumhead patterns

Near infrared avalanche photodiodes with bulk Al0.04Ga0.96Sb and GaSb/AlSb superlattice gain layers

We demonstrate the use of bulk Al0.04Ga0.96Sb and GaSb/AlSb superlattice as the gain material in a separate absorption/multiplication avalanche photodiode with sensitivity up to 1.74 µm. Both gain schemes were implemented in a molecular-beam epitaxy grown structure with a selectively doped InAs/AlSb superlattice as the n-type layer. Hole impact ionization enhancement was observed in Al0.04Ga0.96Sb by using a two wavelength injection scheme. The superlattice gain layer device exhibited multiplication factors in excess of 300, and surface limited dark current at a level comparable to InGaAs/InAlAs devices of similar design. The superlattice gain layer was found to be more promising than its bulk counterpart due to its inherent lower dark current

Accurate simulations of the interplay between process and statistical variability for nanoscale FinFET-based SRAM cell stability

In this paper we illustrate how by using advanced atomistic TCAD tools the interplay between long-range process variation and short-range statistical variability in FinFETs can be accurately modelled and simulated for the purposes of Design-Technology Co-Optimization (DTCO). The proposed statistical simulation and compact modelling methodology is demonstrated via a comprehensive evaluation of the impact of FinFET variability on SRAM cell stability

Design and finite element mode analysis of noncircular gear

The noncircular gear transmission is an important branch of the gear transmission, it is characterized by its compact structure, good dynamic equilibration and other advantages, and can be used in the automobile, engineering machine, ship, machine tool, aviation and spaceflight field etc. Studying on the dynamics feature of noncircular gear transmission can improve the ability to carry loads of, reduce the vibration and noise of, increase the life of the noncircular gear transmission machine, provides guidance for the design of the noncircular gear, and has significant theories and practical meanings. In this paper, the gear transmission technique is used to studied the design method of the noncircular gear, which contains distribution of teeth on the pitch curve, designs of the tooth tip curve and the tooth root curve, design of the tooth profile curve, the gear system dynamics principle is introduced to establish dynamics model for the noncircular gear; basic theory of finite element and mode analysis method are applied, finite element model for the noncircular gear is established, natural vibration characteristic of the noncircular gear is studied. And the oval gear is taken as an example, the mathematics software MathCAD, the 3D modeling software UG and the finite element software ABAQUS are used to realize precise 3D model of the oval gear. The finite element method is used, the natural vibration characteristic of the oval gear is studied, the main vibration types and natural frequencies of the oval gear and that of the equivalent cylindrical gears are analyzed and compared, the conclusions received reflect the dynamics performance of the oval gear, and solid foundation is laid for dynamics research and engineering application of the oval gear transmission

Tunnel switch diode based on AlSb/GaSb heterojunctions

We report on tunnel switch diodes based on AlSb barriers and GaSb p–n junctions grown by molecular beam epitaxy. These were the devices with thyristor like switching in the GaSb/AlSb system. The characteristic "S" shaped current–voltage curve was found to occur for structures with AlSb barriers less than 300 Å thick. The switching voltage and current density exhibited less sensitivity to barrier and epilayer thickness than was predicted by the punch-through model. The results were correlated with drift diffusion simulations which have been modified to account for the presence of a tunneling contact