Energy Consumption and Carbon Emission-Based Productivity Change and Industrialization in Post-Reform

The paper investigates the determinants of productivity growth in China. It also analyses the sustainability of the country’s industrial growth by estimating sectoral productivity, accounting for energy usage and emission since the start of the marketoriented reforms in the late 1970s. The growth accounting analysis indicates that productivity is the most significant driver of growth. Energy and capital are also important factors promoting China’s industrial growth. The substantial productivity improvement of China’s industry is attributable more to high-tech light industrial sectors. Heavy industry, characterized by high energy emission levels, lags behind in terms of productivity and overall technical change.productivity growth, industrial sustainability, energy consumption, carbon emission

Multiscale quantum-defect theory for two interacting atoms in a symmetric harmonic trap

We present a multiscale quantum-defect theory (QDT) for two identical atoms in a symmetric harmonic trap that combines the quantum-defect theory for the van der Waals interaction [B. Gao, Phys. Rev. A \textbf{64}, 010701(R) (2001)] at short distances with a quantum-defect theory for the harmonic trapping potential at large distances. The theory provides a systematic understanding of two atoms in a trap, from deeply bound molecular states and states of different partial waves, to highly excited trap states. It shows, e.g., that a strong $p$ wave pairing can lead to a lower energy state around the threshold than a $s$ wave pairing.Comment: 10 pages, 6 figure

A groove GaInAsP laser on semi-insulating InP using a laterally diffused junction

Low threshold current GaInAsP/InP groove lasers have been fabricated on semi-insulating InP substrates. Three n-type layers are grown with a single liquid phase epitaxial (LPE) growth process, and the p-n junction is formed by a lateral Zn diffusion. The active layer inside the groove provides a real index waveguide. Threshold currents as low as 14 mA with 300 μm cavity length are obtained. A single longitudinal mode at 1.3 μm up to1.4 I_{TH}is observed. The lasers operate with a single lateral mode when the active region width is less than 2.5 μm. This laser is suitable for monolithic integration with other optoelectronic devices

Demonstration of optically modulated dispersion forces

We report the first experiment on the optical modulation of dispersion forces through a change of the carrier density in a Si membrane. For this purpose a high-vacuum based atomic force microscope and excitation light pulses from an Ar laser are used. The experimental results are compared with two theoretical models. The modulation of the dispersion force will find applications in optomechanical micromachines.Comment: 7 pages, 3 figures, opex3.sty is used, text has been made in accordance with the final version to appear in Optics express, 3 misprints are correcte