Novel thalidomide analogues display anti-angiogenic activity independently of immunomodulatory effects

The anti-tumour effects of thalidomide have been associated with its anti-angiogenic properties. Second generation thalidomide analogues are distinct compounds with enhanced therapeutic potential. Although these compounds are beginning to enter trials for the treatment of cancer there is very little information regarding the anti-angiogenic activity of these clinically relevant compounds. Furthermore, it is not known how the various immunomodulatory activities of these compounds relate to anti-angiogenic activity. In this study we assessed the anti-angiogenic activity of compounds from both IMiD™ and SelCID™ classes of analogues using a novel in vitro multicellular human assay system and the established rat aorta assay. Our results show that both the IMiDs and SelCIDs tested are significantly more potent than thalidomide. The anti-angiogenic potency of the analogues was not related to inhibition of endothelial cell proliferation, nor their TNF-α/PDE type 4 inhibitory properties. However, anti-migratory effects in vitro and inhibition of tumour growth in vivo was observed with the analogue IMiD-1 (clinically known as REVIMID™). Our results show that anti-angiogenic activity spans both currently defined classes of thalidomide analogue and is not related to their previously described immunomodulatory properties. Identification of the differential effects of these compounds will enable targeting of such compounds into the appropriate clinical setting. British Journal of Cancer (2002) 87, 1166–1172. doi:10.1038/sj.bjc.6600607 www.bjcancer.com © 2002 Cancer Research U

Characterization of Pt-Si interface by spectroscopic ellipsometry

Spectroscopic ellipsometric measurements for Pt/n-Si samples with different thickness of Pt films have been performed. The thickness of the Pt films determined with the three-phase model (air/Pt/Si) changes with the wavelength λ while that with the four-phase model (air/Pt/interface layer/Si) remains unchanged, showing the existence of an interface layer. At the same time, the apparent optical dielectric constants of the interface layer as a function of λ are also obtained. A calculation based on the effective medium theory is carried out to simulate the optical dielectric data of the interface layer. Some structural information of the interface layer is obtained from the calculation. © 1994 American Institute of Physics.published_or_final_versio

Deep level transient spectroscopy study of particle irradiation induced defects in n-6H-SiC (Abstract)

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Defect formation and annealing behaviors of fluorine-implanted GaN layers revealed by positron annihilation spectroscopy

Defect formation and annealing behaviors of fluorine-implanted, unintentionally doped GaN layers were studied by positron annihilation spectroscopy (PAS). Single Ga vacancies (VGa) were identified as the main vacancy-type defects detected by PAS after fluorine implantation at 180 keV with a dose of 1× 10 15 cm -2. Implantation-induced VGa tend to aggregate and form vacancy clusters after postimplantation annealing in N 2 ambient at 600 °C. Fluorine ions tend to form F-vacancy complexes quickly after thermal annealing, which is consistent with the proposed diffusion model that predicts the behaviors of fluorine in GaN. © 2009 American Institute of Physics.published_or_final_versio

Numerical modeling of transient characteristics of photovoltage in Schottky contacts

Numerical modeling of the transient characteristics of the photovoltage at metal-semiconductor interfaces has been carried out with a simple model in which the contributions of different current transport processes including thermionic emission, tunneling, carrier recombination, and leakage current have been taken into account. The simulation gives the detailed dependence of the transient characteristics on temperature, doping concentration, Schottky barrier height, and leakage resistance. © 1994 American Institute of Physics.published_or_final_versio

Interfacial Fermi level and surface band bending in Ni/semi-insulating GaAs contact

For nickel on the chemically clean surface of undoped semi-insulating GaAs at room temperature, an upward surface band bending of 0.062 eV and a barrier height of 0.690 eV have been observed by the photovoltage and the internal photoemission techniques, respectively. The observed surface band bending is in excellent agreement with its predicted value, and the observed barrier height also agrees very well with its value from the very careful analysis of reversed I-V data. It has been determined that the interfacial Fermi level lies at 0.690 eV below the GaAs conduction band minimum at the interface. The interfacial Fermi level is found to coincide with the energy level of the EL2 native defect, indicating the importance of the EL2 in the Fermi level pinning at the interface. © 1995 American Institute of Physics.published_or_final_versio

Nature of the acceptor responsible for p-type conduction in liquid encapsulated Czochralski-grown undoped gallium antimonide

The acceptors in undoped liquid encapsulated Czochralski (LEC)-grown GaSb were investigated using temperature dependent Hall (TDH) and positron lifetime spectroscopy measurements. TDH measurements were performed on nonirradiated and electron irradiated undoped samples. The 34 meV acceptor was found to be the important one responsible for the p-type conduction in nonirradiated and the e--irradiated undoped materials annealed at temperatures up to 500°C. This acceptor was not related to any VGa-related defect detected and was most likely the GaSb antisite.published_or_final_versio

Influence of annealing on Fermi-level pinning and current transport at Au-Si and Au-GaAs Interfaces

The measurements of internal photoemission and photovoltage within the temperature range of 7-300 K have been performed for unannealed and annealed Au/n-Si and Au/n-GaAs samples. From the internal photoemission measurements, it was observed that annealing at different temperatures does not affect the relativity of interfacial Fermi-level pinning to either the conduction band (for Au/GaAs) or the valence band (for Au/Si) but leads to a significant change of the Schottky barrier height. On the other hand, the photovoltage measurements show that the current transport at the metal/semiconductor interfaces is seriously affected by annealing. © 1995 American Institute of Physics.published_or_final_versio

Pollutant dispersion in a developing valley cold-air pool

Pollutants are trapped and accumulate within cold-air pools, thereby affecting air quality. A numerical model is used to quantify the role of cold-air-pooling processes in the dispersion of air pollution in a developing cold-air pool within an alpine valley under decoupled stable conditions. Results indicate that the negatively buoyant downslope flows transport and mix pollutants into the valley to depths that depend on the temperature deficit of the flow and the ambient temperature structure inside the valley. Along the slopes, pollutants are generally entrained above the cold-air pool and detrained within the cold-air pool, largely above the ground-based inversion layer. The ability of the cold-air pool to dilute pollutants is quantified. The analysis shows that the downslope flows fill the valley with air from above, which is then largely trapped within the cold-air pool, and that dilution depends on where the pollutants are emitted with respect to the positions of the top of the ground-based inversion layer and cold-air pool, and on the slope wind speeds. Over the lower part of the slopes, the cold-air-pool-averaged concentrations are proportional to the slope wind speeds where the pollutants are emitted, and diminish as the cold-air pool deepens. Pollutants emitted within the ground-based inversion layer are largely trapped there. Pollutants emitted farther up the slopes detrain within the cold-air pool above the ground-based inversion layer, although some fraction, increasing with distance from the top of the slopes, penetrates into the ground-based inversion layer.Peer reviewe

Effects of annealing on the electrical properties of Fe-doped InP

The electrical properties of Fe-doped semi-insulating (SI) InP were investigated before and after annealing. The annealing conditions were controlled by changing either the temperature or duration. Correlation between the change of electrical parameters with the change of defect concentration at different annealing stage was observed. The defects and the change of the concentrations in Fe-doped SI InP were detected by room-temperature photocurrent spectroscopy.published_or_final_versio