Effect of electron-phonon scattering on shot noise in nanoscale junctions

We investigate the effect of electron-phonon inelastic scattering on shot noise in nanoscale junctions in the regime of quasi-ballistic transport. We predict that when the local temperature of the junction is larger than its lowest vibrational mode energy $eV_c$, the inelastic contribution to shot noise (conductance) increases (decreases) with bias as $V$ ($\sqrt{V}$). The corresponding Fano factor thus increases as $\sqrt{V}$. We also show that the inelastic contribution to the Fano factor saturates with increasing thermal current exchanged between the junction and the bulk electrodes to a value which, for $V>>V_c$, is independent of bias. A measurement of shot noise may thus provide information about the local temperature and heat dissipation in nanoscale conductors.Comment: 4 pages, 2 figure

Perturbational approach to the quantum capacity of additive Gaussian quantum channel

For a quantum channel with additive Gaussian quantum noise, at the large input energy side, we prove that the one shot capacity is achieved by the thermal noise state for all Gaussian state inputs, it is also true for non-Gaussian input in the sense of first order perturbation. For a general case of $n$ copies input, we show that up to first order perturbation, any non-Gaussian perturbation to the product thermal state input has a less quantum information transmission rate when the input energy tend to infinitive.Comment: 5 page

Inverter-Based Low-Voltage CCII- Design and Its Filter Application

This paper presents a negative type second-generation current conveyor (CCII-). It is based on an inverter-based low-voltage error amplifier, and a negative current mirror. The CCII- could be operated in a very low supply voltage such as ±0.5V. The proposed CCII- has wide input voltage range (±0.24V), wide output voltage (±0.24V) and wide output current range (±24mA). The proposed CCII- has no on-chip capacitors, so it can be designed with standard CMOS digital processes. Moreover, the architecture of the proposed circuit without cascoded MOSFET transistors is easily designed and suitable for low-voltage operation. The proposed CCII- has been fabricated in TSMC 0.18μm CMOS processes and it occupies 1189.91 x 1178.43μm2 (include PADs). It can also be validated by low voltage CCII filters

Perturbation theory of von Neumann Entropy

In quantum information theory, von Neumann entropy plays an important role. The entropies can be obtained analytically only for a few states. In continuous variable system, even evaluating entropy numerically is not an easy task since the dimension is infinite. We develop the perturbation theory systematically for calculating von Neumann entropy of non-degenerate systems as well as degenerate systems. The result turns out to be a practical way of the expansion calculation of von Neumann entropy.Comment: 7 page

Patterned growth of carbon nanotubes on Si substrates without predeposition of metal catalysts

Aligned carbon nanotubes(CNTs) can be readily synthesized on quartz or silicon-oxide-coated Si substrates using a chemical vapor deposition method, but it is difficult to grow them on pure Si substrates without predeposition of metal catalysts. We report that aligned CNTs were grown by pyrolysis of iron phthalocyanine at 1000°C on the templates created on Si substrates with simple mechanical scratching. Scanning electron microscopy and x-ray energy spectroscopy analysis revealed that the trenches and patterns created on the surface of Si substrates were preferred nucleation sites for nanotube growth due to a high surface energy, metastable surface structure, and possible capillarity effect. A two-step pyrolysis process maintained Fe as an active catalyst.This work is supported in part by the Australian Research Council under Centre of Excellence and Discovery research projects