Reproducibility of transmission line measurement of bipolar I-V characteristics of MOSFET's

Reproducibility of transmission line (TL) measurement of bipolar current-voltage (I-V) characteristics of grounded gate MOSFET's has been examined. It is observed that the reproducibility is related to the duration of the pulses generated by the transmission line, and a longer pulse duration gives a better reproducibility. For a short pulse duration, it is more difficult to reproduce the I-V characteristics in the triggering region than in other regions (i.e., the pretriggering and snapback regions).published_or_final_versio

Numerical modeling of transient characteristics of photovoltage in Schottky contacts

Numerical modeling of the transient characteristics of the photovoltage at metal-semiconductor interfaces has been carried out with a simple model in which the contributions of different current transport processes including thermionic emission, tunneling, carrier recombination, and leakage current have been taken into account. The simulation gives the detailed dependence of the transient characteristics on temperature, doping concentration, Schottky barrier height, and leakage resistance. © 1994 American Institute of Physics.published_or_final_versio

Interfacial Fermi level and surface band bending in Ni/semi-insulating GaAs contact

For nickel on the chemically clean surface of undoped semi-insulating GaAs at room temperature, an upward surface band bending of 0.062 eV and a barrier height of 0.690 eV have been observed by the photovoltage and the internal photoemission techniques, respectively. The observed surface band bending is in excellent agreement with its predicted value, and the observed barrier height also agrees very well with its value from the very careful analysis of reversed I-V data. It has been determined that the interfacial Fermi level lies at 0.690 eV below the GaAs conduction band minimum at the interface. The interfacial Fermi level is found to coincide with the energy level of the EL2 native defect, indicating the importance of the EL2 in the Fermi level pinning at the interface. © 1995 American Institute of Physics.published_or_final_versio

Barrier height change in very thin SiO2 films caused by charge injection

In this paper, we report an investigation of barrier height change in gate oxide caused by charge injection. By analyzing the small change in the post-stress Fowler-Nordheim (FN) tunneling current through the oxide layer, the change of the oxide barrier height due to charge injection is determined quantitatively. The barrier height changes associated with different charge-injection directions and measurement polarities for n-channel metal oxide semiconductor field-effect transistors (MOSFETs) are presented. For comparison a measurement on a p-channel MOSFET is also carried out. For all the cases, the barrier height changes always exhibit a power law dependence on injected charge.published_or_final_versio

Influence of annealing on Fermi-level pinning and current transport at Au-Si and Au-GaAs Interfaces

The measurements of internal photoemission and photovoltage within the temperature range of 7-300 K have been performed for unannealed and annealed Au/n-Si and Au/n-GaAs samples. From the internal photoemission measurements, it was observed that annealing at different temperatures does not affect the relativity of interfacial Fermi-level pinning to either the conduction band (for Au/GaAs) or the valence band (for Au/Si) but leads to a significant change of the Schottky barrier height. On the other hand, the photovoltage measurements show that the current transport at the metal/semiconductor interfaces is seriously affected by annealing. © 1995 American Institute of Physics.published_or_final_versio

Interface trap generation by FN injection under dynamic oxide field stress

Interface trap generation under dynamic (bipolar and unipolar) and dc oxide field stress has been investigated with the charge pumping technique. It is observed that regardless of stress type, whether dc or dynamic (bipolar or unipolar), and the polarity of stress voltage, interface trap generation starts to occur at the voltage at which Fowler-Nordheim (FN) tunneling through the oxide starts to build up. For positive voltage, interface trap generation is attributed to the recombination of trapped holes with electrons and to the bond breaking by the hydrogen (H and H+) released during stressing. For negative voltage, in addition to these two mechanisms, the bond breaking by energetic electrons may also contribute to interface trap generation. The frequency dependence of interface trap generation is also investigated. Interface trap generation is independent of stressing frequency for unipolar stress but it shows a frequency dependence for bipolar stress. ©1998 IEEE.published_or_final_versio

Characterization of Pt-Si interface by spectroscopic ellipsometry

Spectroscopic ellipsometric measurements for Pt/n-Si samples with different thickness of Pt films have been performed. The thickness of the Pt films determined with the three-phase model (air/Pt/Si) changes with the wavelength λ while that with the four-phase model (air/Pt/interface layer/Si) remains unchanged, showing the existence of an interface layer. At the same time, the apparent optical dielectric constants of the interface layer as a function of λ are also obtained. A calculation based on the effective medium theory is carried out to simulate the optical dielectric data of the interface layer. Some structural information of the interface layer is obtained from the calculation. © 1994 American Institute of Physics.published_or_final_versio

Geochronology and geochemistry of the c. 80 Ma Rutog granitic pluton, northwestern Tibet: Implications for the tectonic evolution of the Lhasa Terrane

The Rutog granitic pluton lies in the Gangdese magmatic arc in the westernmost part of the Lhasa Terrane, NW Tibet, and has SHRIMP zircon U-Pb ages of c. 80 Ma. The pluton consists of granodiorite and monzogranite with SiO2 ranging from 62 to 72 wt% and Al2 O3 from 15 to 17 wt%. The rocks contain 2.33-4.93 wt% K2O and 3.42-5.52 wt% Na2O and have Na2O/K2O ratios of 0.74-2.00. Their chondrite-normalized rare earth element (REE) patterns are enriched in LREE ((La/Yb)n = 15 to 26) and do not show significant Eu anomalies (αEu = 0.68-1.15). On a primitive mantle-normalized trace element diagram, the rocks are rich in large ion lithophile elements (LILE) and poor in high field strength elements (HFSE), HREE and Y. Their Sr/Y ratios range from 15 to 78 with an average of 30. The rocks have constant initial 87Sr/86Sr ratios (0.7045 to 0.7049) and slightly positive εNd(t) values (+0.1 to +2.3), similar to I-type granites generated in an arc setting. The geochemistry of the Rutog pluton is best explained by partial melting of a thickened continental crust, triggered by underplating of basaltic magmas in a mantle wedge. The formation of the Rutog pluton suggests flat subduction of the Neo-Tethyan oceanic lithosphere from the south. Crustal thickening may have occurred in the Late Cretaceous prior to the India-Asia collision. © Cambridge University Press 2008.published_or_final_versio

Cross-institution online problem based learning in Chinese Medicine Education

New education technology drives the pedagogical changes nowadays. Teaching and learning collaborations can now be extended beyond institutional boundaries. This study reports a new attempt of cross-institution collaboration in co-teaching a Chinese Medicine course. A Cross-institution Online Problem-based Learning (COPBL) is designed and implemented by the University of Hong Kong (HKU) and Chengdu University of Traditional Chinese Medicine (CDUTCM). There are 25 students from HKU and 24 students from CDUTCM who have participated in the COPBL. It is a supplementary component to courses and a seven-step approach has been adopted. Students work individually and collaboratively with floating-facilitators. The classes are blended with face-to-face and online components. As an initial step to understand the effectiveness of COPBL, this study specifically focuses on students’ use of the discussion forum, which is a key online component in COPBL. There are 91.8% of students who have viewed the discussion forum in total, 839 of view counts in all discussion forums. There are 63 replies recorded in all of the discussion forums. The replies could be identified into following categories, comments (33%), comments and questions (27%), responses (37%), and others (3%).This study has demonstrated that problem-based learning can be conducted in a blended form with traditional classroom teaching methods and well-designed online components. The COPBL offers new possibilities in redesigning pedagogy with new education technology. It could bring our education into a new era surrounded with new learning experiences.postprin

Two-terminal write-once-read-many-times memory device based on charging-controlled current modulation in Al/Al-Rich Al 2O 3/p-Si diode

A write-once-read-many-times (WORM) memory device was realized based on the charging-controlled modulation in the current conduction of Al/Al-rich Al 2O 3/p-type Si diode. A large increase in the reverse current of the diode could be achieved with a negative charging voltage, e.g., charging at -25 V for 1 ms results in a current increase by about four orders. Memory states of the WORM device could be altered by changing the current conduction with charge trapping in the Al-rich Al 2O 3 layer. The memory exhibited good reading endurance and retention characteristics. © 2011 IEEE.published_or_final_versio