66,725 research outputs found

    A groove GaInAsP laser on semi-insulating InP using a laterally diffused junction

    Get PDF
    Low threshold current GaInAsP/InP groove lasers have been fabricated on semi-insulating InP substrates. Three n-type layers are grown with a single liquid phase epitaxial (LPE) growth process, and the p-n junction is formed by a lateral Zn diffusion. The active layer inside the groove provides a real index waveguide. Threshold currents as low as 14 mA with 300 ÎĽm cavity length are obtained. A single longitudinal mode at 1.3 ÎĽm up to1.4 I_{TH}is observed. The lasers operate with a single lateral mode when the active region width is less than 2.5 ÎĽm. This laser is suitable for monolithic integration with other optoelectronic devices

    Competing spin transfer and dissipation at Co/Cu(001) interfaces on femtosecond timescales

    Full text link
    By combining interface-sensitive non-linear magneto-optical experiments with femtosecond time resolution and ab-initio time-dependent density functional theory, we show that optically excited spin dynamics at Co/Cu(001) interfaces proceeds via spin-dependent charge transfer and backtransfer between Co and Cu. This ultrafast spin transfer competes with dissipation of spin angular momentum mediated by spin-orbit coupling already on sub 100 fs timescales. We thereby identify the fundamental microscopic processes during laser-induced spin transfer at a model interface for technologically relevant ferromagnetic heterostructures.Comment: 5 pages, 4 figure

    Spatial Distribution of Metal Emissions in SNR 3C 397 Viewed with Chandra and XMM

    Full text link
    We present X-ray equivalent width imaging of the supernova remnant (SNR) 3C 397 for Mg He\alpha, Si He\alpha, S He\alpha, and Fe K\alpha complex lines with the Chandra and XMM-Newton observations. The images reveal that the heavier the element is, the smaller the extent of the element distribution is. The Mg emission is evidently enhanced in the southeastern blow-out region, well along the radio boundary there, and appears to partially envelope the eastern Fe knot. Two bilateral hat-like Si line-emitting structures are along the northern and southern borders, roughly symmetric with respect to the southeast-northwest elongation axis. An S line-emitting shell is located just inner to the northern radio and IR shell, indicating of a layer of reversely shocked sulphur in the ejecta. A few enhanced Fe features are basically aligned along the diagonal of the rectangular shape of the SNR, which implicates an early asymmetric SN explosion.Comment: 4 pages, 4 figures, appears in Science China Physics, Mechanics & Astronomy, 2010, 53 (Suppl.1), 267-27

    Collimating lenses from non-Euclidean transformation optics

    Full text link
    Based on the non-Euclidean transformation optics, we design a thin metamaterial lens that can achieve wide-beam radiation by embedding a simple source (a point source in three-dimensional case or a line current source in two-dimensional case). The scheme is performed on a layer-by-layer geometry to convert curved surfaces in virtual space to flat sheets, which pile up and form the entire lens in physical space. Compared to previous designs, the lens has no extreme material parameters. Simulation results confirm its functionality.Comment: 12 pages, 6 figure

    Mode stabilized terrace InGaAsP lasers on semi-insulating InP

    Get PDF
    Mode stabilized terrace InGaAsP lasers have been fabricated on semi-insulating InP substrates. The fabrication involves a selective, single-step liquid phase epitaxial growth process, and a lateral Zn diffusion. Two versions of the terrace lasers are fabricated, and threshold currents as low as 35 mA and 50 mA respectively are obtained. The lasers operate with a stable single lateral mode. High power performance is observed. These lasers are suitable for monolithic integration with other optoelectronic devices

    Directional emission from asymmetric resonant cavities

    Get PDF
    Asymmetric resonant cavities (ARCs) with highly non-circular but convex cross-sections are predicted theoretically to have high-Q whispering gallery modes with very anisotropic emission. We develop a ray dynamics model for the emission pattern and present numerical and experimental confirmation of the theory.Comment: 7 pages LaTeX, 3 postscript figure

    Low threshold InGaAsP/InP lasers with microcleaved mirrors suitable for monolithic integration

    Get PDF
    Low threshold InGaAsP/InP injection lasers on semi-insulating InP substrates have been developed with mirrors fabricated by the microcleavage technique. Miniature suspended bridges containing the laser channels have been formed and then microcleavage has been accomplished by the use of ultrasonic vibrations. Lasers with current thresholds as low as 18 mA with 140-µm cavity length and with 35–45% differential quantum efficiency have been obtained

    Longitudinal magnetic excitations in classical spin systems

    Full text link
    Using spin dynamics simulations we predict the splitting of the longitudinal spin wave peak in all antiferromagnets with single site anisotropy into two peaks separated by twice the energy gap at the Brillouin zone center. This phenomenon has yet to be observed experimentally but can be easily investigated through neutron scattering experiments on MnF2_2 and FeF2_2. We have also determined that for all classical Heisenberg models the longitudinal propagative excitations are entirely multiple spin-wave in nature.Comment: four pages three figures, the last two postscript files are two parts of the third figur

    Monolithic integration of a very low threshold GaInAsP laser and metal-insulator-semiconductor field-effect transistor on semi-insulating InP

    Get PDF
    Monolithic integration of 1.3-µm groove lasers and metal-insulator-semiconductor field-effect transistors (MISFET) is achieved by a simple single liquid phase epitaxy (LPE) growth process. Laser thresholds as low as 14 mA for 300-µm cavity length are obtained. MIS depletion mode FET's with n channels on LPE grown InP layer show typical transconductance of 5–10 mmho. Laser modulation by the FET current is demonstrated at up to twice the threshold current
    • …
    corecore