Displacement of Boron from the Silicon Crystal Nodes

The process of boron displacement from the nodes into interstitial positions by interstitial Si atoms in silicon (Watkins effect) on the conditions of implantation and annealing has been investigated with help of X-ray diffraction and electrical methods. It was revealed that the efficiency of the Watkins substitution is determined by the ion current density (level of ionization). With increasing of the ionization level in the implanted layer during implantation or annealing (additional low-energy electron irradiation) the replacement process may be suppressed

Nitrogen as Annihilation Centre for Point Defects in Implanted Silicon

The accumulation of radiation defects in silicon implanted with 150 keV N+ ions at high ion current density (20 A cm-2) and low density (0.05 A cm-2) was investigated by means of X-ray double-crystal spectrometer and EPR method. At high ion current density the radiation defects accumulate up to amorphization at the ion dose of 11015 cm-2. At low ion current density the curve of lattice parameter change on dose has oscillatory view and amorphization of the layer is not achieved at least up to ion dose of 1.41016 cm-2. The processes of the nitrogen atoms capture on the vacancy defects and Watkins displacement of them from the nodes work as additional channel of radiation defect annihilation. At high ion current densities and at high level of ionization in the implanted layer process of Watkins substitution is suppressed

Displacement of Boron from the Silicon Crystal Nodes

The process of boron displacement from the nodes into interstitial positions by interstitial Si atoms in silicon (Watkins effect) on the conditions of implantation and annealing has been investigated with help of X-ray diffraction and electrical methods. It was revealed that the efficiency of the Watkins substitution is determined by the ion current density (level of ionization). With increasing of the ionization level in the implanted layer during implantation or annealing (additional low-energy electron irradiation) the replacement process may be suppressed

Nitrogen as Annihilation Centre for Point Defects in Implanted Silicon

The accumulation of radiation defects in silicon implanted with 150 keV N+ ions at high ion current density (20 A cm-2) and low density (0.05 A cm-2) was investigated by means of X-ray double-crystal spectrometer and EPR method. At high ion current density the radiation defects accumulate up to amorphization at the ion dose of 11015 cm-2. At low ion current density the curve of lattice parameter change on dose has oscillatory view and amorphization of the layer is not achieved at least up to ion dose of 1.41016 cm-2. The processes of the nitrogen atoms capture on the vacancy defects and Watkins displacement of them from the nodes work as additional channel of radiation defect annihilation. At high ion current densities and at high level of ionization in the implanted layer process of Watkins substitution is suppressed

Современные ионно-лучевые и фотонные обработки материалов для микро-, опто- и наноэлектроники / Ф. Ф. Комаров, А. Р. Челядинский

Полный текст документа доступен пользователям сети БГУ.The text-book focuses on the main ways of solving problems of semiconductor materials. Radiation defects, their accumulation, structure transformation into residual damage, influence on electrical activation and diffusion of impurities, formation of inclusions of the impurity second phase and methods of suppression of damage in implanted silicon are analyzed. It is demonstrated that using specially implanted impurities or defects we can fight impurities and defects

Formation of secondary damage in silicon implanted with carbon and boron ions

Методом просвечивающей электронной микроскопии исследовано образование остаточных протяженных нарушений в кремнии, имплантированном ионами С+ и методом двойной им- плантации С+ и В+. Установлено, что формирование остаточных нарушений может быть по- давлено благодаря аннигиляции точечных дефектов на атомах С (эффект Воткинса). Поло- жительный эффект достигается при локализации внедряемого углерода по узлам решетки, что обеспечивается его имплантацией с эффективной плотностью тока сканирующего пучка ионов не ниже 1,0 мкА⋅см–2