6,436 research outputs found
DISTRIBUTIONAL IMPACTS OF CAPPING ELIGIBILITY FOR COMMODITY PROGRAM PAYMENTS
Adjusted Gross Income, Commodity Payments, Eligibility, Means Test, Resource /Energy Economics and Policy, Q12, Q18,
Tracking primary thermalization events in graphene with photoemission at extreme timescales
Direct and inverse Auger scattering are amongst the primary processes that
mediate the thermalization of hot carriers in semiconductors. These two
processes involve the annihilation or generation of an electron-hole pair by
exchanging energy with a third carrier, which is either accelerated or
decelerated. Inverse Auger scattering is generally suppressed, as the
decelerated carriers must have excess energies higher than the band gap itself.
In graphene, which is gapless, inverse Auger scattering is instead predicted to
be dominant at the earliest time delays. Here, femtosecond
extreme-ultraviolet pulses are used to detect this imbalance, tracking both the
number of excited electrons and their kinetic energy with time- and
angle-resolved photoemission spectroscopy. Over a time window of approximately
25 fs after absorption of the pump pulse, we observe an increase in conduction
band carrier density and a simultaneous decrease of the average carrier kinetic
energy, revealing that relaxation is in fact dominated by inverse Auger
scattering. Measurements of carrier scattering at extreme timescales by
photoemission will serve as a guide to ultrafast control of electronic
properties in solids for PetaHertz electronics.Comment: 16 pages, 8 figure
A novel high resolution contactless technique for thermal field mapping and thermal conductivity determination: Two-Laser Raman Thermometry
We present a novel high resolution contactless technique for thermal
conductivity determination and thermal field mapping based on creating a
thermal distribution of phonons using a heating laser, while a second laser
probes the local temperature through the spectral position of a Raman active
mode. The spatial resolution can be as small as nm, whereas its
temperature accuracy is K. We validate this technique investigating the
thermal properties of three free-standing single crystalline Si membranes with
thickness of 250, 1000, and 2000 nm. We show that for 2-dimensional materials
such as free-standing membranes or thin films, and for small temperature
gradients, the thermal field decays as in the diffusive
limit. The case of large temperature gradients within the membranes leads to an
exponential decay of the thermal field, . The
results demonstrate the full potential of this new contactless method for
quantitative determination of thermal properties. The range of materials to
which this method is applicable reaches far beyond the here demonstrated case
of Si, as the only requirement is the presence of a Raman active mode
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