A Modified Source Impact Ionisation MOSFET (MS I-MOS) for Low Power and Fast Switching Digital Applications

This paper presents a two-dimensional (2D) modified source n-p-n impact ionisation MOSFET, called MS IMOS, to suppress the short channel effects and increase the oncurrent (ION) to off-current (IOFF) ratio. The proposed device is an n-p-n I-MOS on silicon on insulator (SOI), upon which a source engineering is performed. The proposed device inherits the characteristics of bipolar I-MOS, with the advantage of reduced floating body effect and the increased ION to IOFF ratio, it exhibits a lower operating voltage than that of earlier I-MOS structures. The reliability issues related to hot carrier injection in the gate oxide has also been addressed effectively in the proposed structure due to lower operating voltage