Restoration solutions for plasma-damaged Ultra Low k for the 45nm technology node and beyond

International audienc

Integrated monitoring of ULK dielectrics out-gassing and measurement of pore sealing efficiency by residual gas analysis technique

International audienc

Porous SiOCH Ultra Low-K recovery treatments after direct CMP process

International audienc

Dense SiOC cap for damage-less ultra low k integration with direct CMP in C45 architecture and beyond

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Evaluation of ellipsometric porosimetry for in-line characterization of ultra low-κ\kappa dielectrics

International audienceEllipsometric porosimetry (EP) has recently appeared to be a suitable non-destructive technique for the characterization of porous ultra low-$κ$ (ULK) dielectrics. The analysis of ellipsometric spectra of a film during adsorption and desorption cycles of an adsorptive, allows the determination of its open pore fraction, pore size distribution, refractive index and thickness. Several issues are encountered when integrating low-κ materials as inter-metal dielectrics (IMD) in the CMOS architecture such as the deposition monitoring, the pore sealing efficiency and the process induced damages. In this study we focus on the capabilities of EP to characterize ULK materials and their integration processes

Integration and RF characterization of high density Through Silicon Vias for 3D chip stacking

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