171 research outputs found

    Multifunctional quantum dots and liposome complexes in drug delivery

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    Incorporate both diagnostic and therapeutic functions into a single nanoscale system is an effective modern drug delivery strategy. Combine liposomes with Semiconductor quantum dots (QDs) have great potential to achieve such dual functions, referred to in this review as a liposomal QD hybrid system (L-QD). Here we review the recent literature dealing with the design and application of L-QD for advanced in bio-imaging and drug delivery. After a summary of L-QD synthesis process and evaluation of their properties, we will focus on their multifunctional applications, ranging from in vitro cell imaging to theranostic drug delivery approaches

    Glyco-functionalised quantum dots and their progress in cancer diagnosis and treatment

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    Despite all major breakthroughs in recent years of research, we are still unsuccessful to effectively diagnose and treat cancer that has express and metastasizes. Thus, the development of a novel approach for cancer detection and treatment is crucial. Recent progress in Glyconanotechnology has allowed the use of glycans and lectins as bio-functional molecules for many biological and biomedical applications. With the known advantages of quantum dots (QDs) and versatility of carbohydrates and lectins, Glyco-functionalised QD is a new prospect in constructing biomedical imaging platform for cancer behaviour study as well as treatment. In this review, we aim to describe the current utilisation of Glyco-functionalised QDs as well as their future prospective to interpret and confront cancer

    Engineering the energy gap near the valence band edge in Mn-incorporated Cu3Ga5Te9 for an enhanced thermoelectric performance

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    Cu3Ga5Te9-based compounds Cu3-xGa5MnxTe9 (x=0-0.2) with Mn substitution for Cu have been synthesized. The engineered energy gap (∆EA) between impurity and valence band is reduced from 44.4 meV at x=0 to 25.7 meV at x=0.1, which is directly responsible for the reduction of potential barrier for thermal excitation of carriers and enhancement in carrier concentration. However, the Seebeck coefficient shows an increasing tendency with the increasing of determined Hall carrier concentration (n). This anomalous behavior suggests that the Pisarenko plots under assumed effective masses do not fit the current relationship between the Seebeck coefficient and carrier density. With the combination of enhanced electrical conductivities and reduced thermal conductivities at high temperatures, the maximum thermoelectric (TE) figure of merit (ZT) of 0.81 has been achieved at 804 K with x=0.1, which is about 1.65 and 2.9 times the value of current and reported intrinsic Cu3Ga5Te9. The remarkable improvement in TE performance proves that we have succeeded in engineering the energy gap near the valence band edge upon Mn incorporation in Cu3Ga5Te9

    Engineering band structure via the site preference of Pb2+ in the In+ site for enhanced thermoelectric performance of In6Se7

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    Although binary In-Se based alloys as thermoelectric (TE) candidates are of interests in recent years, little attention has been paid into In6Se7 based compounds. With substituting Pb in In6Se7, the preference of Pb2+ in the In+ site has been observed, allowing the Fermi level (Fr) shift towards the conduction band and the localized state conduction becomes dominated. Consequently, the Hall carrier concentration (nH) has been enhanced significantly with the highest nH value being about 2~3 orders of magnitude higher than that of Pb-free sample. Meanwhile, the lattice thermal conductivity (κL) tends to be reduced as nH value increases, owing to an increased phonon scattering on carriers. As a result, a significantly enhanced TE performance has been achieved with the highest TE figure of merit (ZT) of 0.4 at ~850 K. This ZT value is 27 times that of intrinsic In6Se7 (ZT=0.015 at 640 K), which proves a successful band structure engineering through site preference of Pb in In6Se7

    The role of excess Sn in Cu4Sn7S16 for modification of the band structure and a reduction in lattice thermal conductivity

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    In this work, we have investigated the band structures of ternary Cu4Sn7+xS16 (x = 0–1.0) compounds with an excess of Sn, and examined their thermoelectric (TE) properties. First principles calculations reveal that the excess Sn, which exists as Sn2+ and is preferentially located at the intrinsic Cu vacancies, unpins the Fermi level (Fr) and allows Fr to enter the conduction band (CB) at x = 0.5. Accordingly, the Hall carrier concentration (nH) is enhanced by about two orders of magnitude when the x value increases from x = 0 to x = 0.5. Meanwhile, the lattice thermal conductivity (κL) is reduced significantly to 0.39 W K−1 m−1 at 893 K, which is in reasonably good agreement with the estimation using the Callaway model. As a consequence, the dimensionless TE figure of merit (ZT) of the compound Cu4Sn7+xS16 with x = 0.5 reaches 0.41 at 863 K. This value is double that of the stoichiometric Cu4Sn7S16, proving that excess Sn in Cu4Sn7S16 is beneficial for improving the TE performance

    Complementary stabilization by core/sheath carbon nanofibers/spongy carbon on submicron tin oxide particles as anode for lithium-ion batteries

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    To limit the pulverization of tin-based anode materials during lithiation/delithiation, submicron tin oxide/tin particles are fixed on core/sheath carbon nanofiber/spongy carbon via hydrothermal and carbothermal reduction treatment in this work. During carbothermal reduction, SnO2 nanosheets are converted to spherical Sn submicron particles and simultaneously the hollow spongy carbon is produced and still enwrap on carbon nanofiber. The as-produced flexible film is used for a binder-free anode for lithium ion batteries, without the polymer binder and conductive carbon. At 0.1, 0.5, 1 and 2 A g-1, the composite electrode respectively displays a discharging capacity of 1393.0, 738.2, 583.6 and 382.6 mAh g-1. Moreover, it delivers specific capacity of 726.9 mAh g-1 and coulombic efficiency of 99.45 % after 300 cycles at 0.1 A g-1. The comparison sample of carbon nanofiber/SnOx film without the presence of spongy carbon displays much lower rate performance and worse cyclic performance. The integrated structure of carbon nanofiber/SnOx/spongy carbon results in the remarkable Li-storage performance, in which the carbon nanofiber and spongy carbon synergistically provide conductive channel and buffer zone to hinder the pulverization and peeling of SnOx particles during charging-discharging processes

    Post-combustion carbon capture

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    Energy-Efficient Algorithm for Sensor Networks with Non-Uniform Maximum Transmission Range

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    In wireless sensor networks (WSNs), the energy hole problem is a key factor affecting the network lifetime. In a circular multi-hop sensor network (modeled as concentric coronas), the optimal transmission ranges of all coronas can effectively improve network lifetime. In this paper, we investigate WSNs with non-uniform maximum transmission ranges, where sensor nodes deployed in different regions may differ in their maximum transmission range. Then, we propose an Energy-efficient algorithm for Non-uniform Maximum Transmission range (ENMT), which can search approximate optimal transmission ranges of all coronas in order to prolong network lifetime. Furthermore, the simulation results indicate that ENMT performs better than other algorithms

    Significantly Enhanced Thermoelectric Performance of γ-In2Se3 through Lithiation via Chemical Diffusion

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    γ-In2Se3 is selected as a thermoelectric candidate because it has a unique crystal structure and thermal stability at relatively high temperatures. In this work we have prepared lithiated γ-In2Se3 through chemical diffusion and investigated its band structures and thermoelectric performance. After lithiation of γ-In2Se3 in lithium acetate (CH3COOLi) solution at 50oC, we have observed a high Hall carrier concentration (nH) up to ≤1.71×1018 cm-3 at room temperature (RT), which is about ∼4 orders of magnitude compared to that of pristine γ-In2Se3. The enhancement in nH is directly responsible for the remarkable improvement in electrical conductivity, and can be elucidated as the Fermi level (Fr) unpinning and moving towards the conduction band (CB) through the dominant interstitial occupation of Li+ in the γ-In2Se3 lattice. Combined with the minimum lattice thermal conductivity (κL=0.30-0.34 WK-1m-1) at ~923 K, the highest ZT value of 0.62-0.67 is attained, which is about 9-10 times that of pristine γ-In2Se3, proving that the lithiation in γ-In2Se3 is an effective approach on the improvement of the thermoelectric performance

    Luminescent downshifting silicon quantum dots for performance enhancement of polycrystalline silicon solar cells

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    Silicon quantum dots (Si-QDs) with luminescent downshifting properties have been used for the efficiency enhancement of solar cells. In this study, Phenylacetylene-capped silicon quantum dots (PA Si-QDs) have been fabricated and applied as luminescent downshifting material on polycrystalline silicon solar cells, by dropcasting. The PA Si-QD coated solar cell samples presented an average increase in the short circuit current (Isc) of 0.75% and 1.06% for depositions of 0.15 mg and 0.01 mg on 39 mm × 39 mm pc-Si solar cells, respectively. The increase was further enhanced by full encapsulation of the sample leading to overall improved performance of about 3.4% in terms of Isc and 4.1% in terms of power output (Pm) when compared to the performance of fully encapsulated reference samples. The PA Si-QD coating achieved a reduction in specular reflectance at 377 nm of 61.8%, and in diffuse reflectance of 44.4%. The increase observed in the Isc and Pm is a promising indicator for the use of PA Si-QDs as luminescent downshifting material to improve the power conversion efficiency of pc-Si solar cells
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