Simultaneous Acquisition of Ultrasound and Gamma Signals with a Single-Channel Readout

We propose an integrated front-end data acquisition circuit for a hybrid ultrasound (US)-gamma probe. The proposed circuit consists of three main parts: (1) a preamplifier for the gamma probe, (2) a preprocessing analog circuit for the US, and (3) a digitally controlled analog switch. By exploiting the long idle time of the US system, an analog switch can be used to acquire data of both systems using a single output channel simultaneously. On the nuclear medicine (NM) gamma probe side, energy resolutions of 18.4% and 17.5% were acquired with the standalone system and with the proposed switching circuit, respectively, when irradiated with a Co-57 radiation source. Similarly, signal-to-noise ratios of 14.89 and 13.12 dB were achieved when US echo signals were acquired with the standalone system and with the proposed switching circuit, respectively. Lastly, a combined US-gamma probe was used to scan a glass target and a sealed radiation source placed in a water tank. The results confirmed that, by using a hybrid US-gamma probe system, it is possible to distinguish between the two objects and acquire structural information (ultrasound) alongside molecular information (gamma radiation source)

Scintillation characteristics of chemically processed Ce:GAGG single crystals.

We investigated the correlation between the surface finish and luminescence properties of chemically polished cerium-doped single-crystal Gd3Al2Ga3O12 scintillators (Ce:GAGG), from the crystallographic perspective. The intrinsic defects in the crystals were identified via photoluminescence spectroscopy followed by scanning electron microscopy and X-ray diffraction to analyze their surface morphologies. Finally, the samples were individually wrapped with an enhanced specular reflector (ESR), coupled with a photomultiplier tube, placed inside a dark box, connected to a digitizer, and irradiated with a 137Cs radioactive source to evaluate the relative light (signal) output and energy resolution of each sample. The as-cut (rough) Ce:GAGG single-crystal samples, that were chemically polished with phosphoric acid at 190°C in air for 60 min, demonstrated a 33.1% increase in signal amplitude (light output to photosensor) and 2.4% (absolute value) improvement in energy resolution, which were comparable to those obtained for the mechanically polished sample. For these samples, the surface roughness was found to be ~430 nm, which was approximately half of that of the mechanically polished sample. The chemical polishing method used in this study is a cost-effective and straightforward technique to improve structural imperfections and can facilitate the treatment of inorganic scintillators with complex shapes and/or on a large scale

A Review of Inorganic Scintillation Crystals for Extreme Environments

In the past, the main research and use of scintillators in extreme environments were mainly limited to high energy physics and the well-logging industry, but their applications are now expanding to reactor monitoring systems, marine and space exploration, nuclear fusion, radiation therapy, etc. In this article, we review and summarize single-crystal inorganic scintillator candidates that can be applied to radiation detection in extreme environments. Crucial scintillation properties to consider for use in extreme environments are temperature dependence and radiation resistance, along with scintillators’ susceptibility to moisture and mechanical shock. Therefore, we report on performance change, with a focus on radiation resistance and temperature dependence, and the availability of inorganic scintillator for extreme environments—high radiation, temperature, humidity and vibration—according to their applications. In addition, theoretical explanations for temperature dependence and radiation resistance are also provided

Performance Comparison of CdTe:Na, CdTe:As, and CdTe:P Single Crystals for Solar Cell Applications

We compared thermal stability, open-circuit voltage, short-circuit current, and fill factor values of single-crystal Cadmium telluride (CdTe) grown using the vertical Bridgman (VB) technique and doped with group V elements (phosphorus and arsenic), and group Ⅰ element (sodium), followed by an annealing process. The sodium-doped CdTe maintained a hole density of 1016 cm−3 or higher; after annealing for a long time, this decreased to 1015 cm−3 or less. The arsenic-doped CdTe maintained a hole density of approximately 1016 cm−3 even after the annealing process; however its bulk minority carrier lifetime decreased by approximately 10%. The phosphorus-doped CdTe maintained its properties after the annealing process, ultimately achieving a hole density of ~1016 cm−3 and a minority carrier lifetime of ~40 ns. The characteristics of a single-crystal solar cell were evaluated using a solar cell device that contained single-crystal CdTe with various dopants. The sodium-doped sample exhibited poor interfacial properties, and its performance decreased rapidly during annealing. The samples doped with group V elements exhibited stable characteristics even during long-term annealing. We concluded, therefore, that group V elements dopants are more suitable for CdTe single-crystal-based solar cell applications involving thermal stress conditions, such as space missions or extreme fabrication temperature environments

Synaptic characteristics with strong analog potentiation, depression, and short-term to long-term memory transition in a Pt/CeO2/Pt crossbar array structure

A crossbar array of Pt/CeO2/Pt memristors exhibited the synaptic characteristics such as analog, reversible, and strong resistance change with a ratio of similar to 10(3), corresponding to wide dynamic range of synaptic weight modulation as potentiation and depression with respect to the voltage polarity. In addition, it presented timing-dependent responses such as paired-pulse facilitation and the short-term to long-term memory transition by increasing amplitude, width, and repetition number of voltage pulse and reducing the interval time between pulses. The memory loss with a time was fitted with a stretched exponential relaxation model, revealing the relation of memory stability with the input stimuli strength. The resistance change was further enhanced but its stability got worse as increasing measurement temperature, indicating that the resistance was changed as a result of voltage-and temperature-dependent electrical charging and discharging to alter the energy barrier for charge transport. These detailed synaptic characteristics demonstrated the potential of crossbar array of Pt/CeO2/Pt memristors as artificial synapses in highly connected neuron-synapse network