23 bits optical sensor based on nonvolatile organic memory transistor

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Nonvolatile organic transistor-memory devices using various thicknesses of silver nanoparticle layers

Author name used in this publication: C. W. LeungAuthor name used in this publication: P. K. L. Chan2010-2011 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

Effect of poling procedure on the properties of lead zirconate titanate/vinylidene fluoride-trifluoroethylene composites

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Investigating the uneven current injection in perovskite-based thin film bipolar resistance switching devices by thermal Imaging

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Physical mechanisms for hot-electron degradation in GaN light-emitting diodes

Author name used in this publication: W. K. FongAuthor name used in this publication: P. K. L. ChanAuthor name used in this publication: C. Surya2009-2010 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

Resistive switching in perovskite-oxide capacitor-type devices

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Molecular dynamics study of thermal transport in dinaphtho[2,3-b:2’,3’-f]thieno[3,2-b]thiophene (DNTT) organic semiconductor

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Interfacial defects in resistive switching devices probed by thermal analysis

Author name used in this publication: C. W. LeungAuthor name used in this publication: W. H. HuAuthor name used in this publication: P. K. L. Chan2008-2009 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

Thermal annealing and temperature dependences of memory effect in organic memory transistor

We investigate the annealing and thermal effects of organic non-volatile memory with floating silver nanoparticles by real-time transfer curve measurements. During annealing, the memory window shows shrinkage of 23 due to structural variation of the nanoparticles. However, by increasing the device operating temperature from 20 to 90 °C after annealing, the memory window demonstrates an enlargement up to 100. The differences in the thermal responses are explained and confirmed by the co-existence of electron and hole traps. Our findings provide a better understanding of organic memory performances under various operating temperatures and validate their applications for temperature sensing or thermal memories. © 2011 American Institute of Physics.published_or_final_versio

Experiences of adolescents and young adults with ADHD in Hong Kong: treatment services and clinical management

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