102 research outputs found

    The Physics of the B Factories

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    A time-domain smart temperature sensor without an explicit bandgap reference in SOI CMOS operating up to 225°C

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    10.1109/ASSCC.2013.6691010Proceedings of the 2013 IEEE Asian Solid-State Circuits Conference, A-SSCC 2013173-17

    Interfacial properties of silicon nitride grown on epitaxial graphene on 6H-SiC substrate

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    10.1021/jp304054uJournal of Physical Chemistry C1164222315-2231

    Impact of interface structure on Schottky-barrier height for NiZr O2 (001) interfaces

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    10.1063/1.1891285Applied Physics Letters86131-3APPL

    Sample-and-hold circuit with dynamic switch leakage compensation

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    10.1049/el.2013.2092Electronics Letters49211323-1325ELLE

    Band alignment and thermal stability of HfO2 gate dielectric on SiC

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    10.1063/1.2969061Applied Physics Letters935-APPL

    In situ X-ray photoelectron spectroscopy studies of HfO2 gate dielectric on SiC

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    10.1016/j.tsf.2010.03.116Thin Solid Films51824 SUPPL.e31-e33THSF

    Atomic N modified rutile TiO2(110) surface layer with significant visible light photoactivity

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    10.1021/jp408798fJournal of Physical Chemistry C1182994-100

    High temperature bandgap reference in PDSOI CMOS with operating temperature up to 300°C

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    10.1109/RFIT.2012.6401630Proceedings of the 2012 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2012110-11
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