12 research outputs found

    Two-Fluid Wetting Behavior of a Hydrophobic Silicon Nanowire Array

    No full text
    The two-fluid wetting behavior of surfaces textured by an array of silicon nanowires is investigated systematically. The Si nanowire array is produced by a combination of colloidal patterning and metal-catalyzed etching, with control over its roughness depending upon the wire length. The nanowires are made hydrophobic and oleophobic by treatment with hydrocarbon and fluorinated self-assembled monolayers, respectively. Static, advancing, and receding contact angles are measured with water, hexadecane, and perfluorotripentylamine in both single-fluid (droplet on solid in an air environment) and two-fluid (droplet on solid in a liquid environment) configurations. The single-fluid measurements show wetting behavior similar to that expected by the Wenzel and Cassie–Baxter models, where the wetting or non-wetting behaviors are amplified with increasing roughness. The two-fluid systems on the rough surface exhibit more complex configurations because either the droplet or the environment fluid can penetrate the asperities depending upon the wettability of each fluid. It is observed that, when the Young contact angles are significantly increased or reduced from single-liquid to two-liquid systems, the effect of roughness is relatively minimal. However, when the Young contact angles are similar, roughness has almost identical influence on apparent contact angles in single- and two-liquid systems. The Wenzel and Cassie–Baxter models are modified to describe various two-fluid wetting states. In cases where metastable behavior is observed for the droplet, advancing and receding measurements are performed to suggest the equilibrium state of the droplet

    Demonstration of Hexagonal Phase Silicon Carbide Nanowire Arrays with Vertical Alignment

    No full text
    SiC nanowire based electronics hold promise for data collection in harsh environments wherein conventional semiconductor platforms would fail. However, the full adaptation of SiC nanowires as a material platform necessitates strict control of nanowire crystal structure and orientation for reliable performance. Toward such efforts, we report the growth of hexagonal phase SiC nanowire arrays grown with vertical alignment on commercially available single crystalline SiC substrates. The nanowire hexagonality, confirmed with Raman spectroscopy and atomic resolution microscopy, displays a polytypic distribution of predominantly 2H and 4H. Employing a theoretical growth model, the polytypic distribution of hexagonal phase nanowires is accurately predicted in the regime of high supersaturation. Additionally, the reduction of disorder-induced phonon density of states is achieved while maintaining nanowire morphology through a postgrowth anneal. The results of this work expand the repertoire of SiC nanowires by implementing a low-temperature method that promotes polytypes outside the well-studied cubic phase and introduces uniform, vertical alignment on industry standard SiC substrates

    Atomic-Scale Electronic Characterization of Defects in Silicon Carbide Nanowires by Electron Energy-Loss Spectroscopy

    No full text
    The atomic-level resolution of scanning transmission electron microscopy (TEM) is used for structural characterization of nanomaterials, but the resolution afforded by TEM also enables electronic characterization of defects in these materials through electron energy-loss spectroscopy (EELS). Here, the power of EELS is harnessed to characterize the local band gap of inclusion defects in hexagonal silicon carbide nanowires with a high density of stacking faults. The band gaps we extract from the EELS data align within 0.1 eV of expected values for hexagonal silicon carbide and stacking faults within hexagonal silicon carbide. These experiments show that individual cubic phase inclusions in hexagonal silicon carbide significantly alter the local electronic structure, in particular, the band gap, in contrast to the polarizability tensor that retains the characteristic signature of the global hexagonal crystal structure

    In Situ Localized Growth of Ordered Metal Oxide Hollow Sphere Array on Microheater Platform for Sensitive, Ultra-Fast Gas Sensing

    No full text
    A simple and versatile strategy is presented for the localized on-chip synthesis of an ordered metal oxide hollow sphere array directly on a low power microheater platform to form a closely integrated miniaturized gas sensor. Selective microheater surface modification through fluorinated monolayer self-assembly and its subsequent microheater-induced thermal decomposition enables the position-controlled deposition of an ordered two-dimensional colloidal sphere array, which serves as a sacrificial template for metal oxide growth via homogeneous chemical precipitation; this strategy ensures control in both the morphology and placement of the sensing material on only the active heated area of the microheater platform, providing a major advantage over other methods of presynthesized nanomaterial integration via suspension coating or printing. A fabricated tin oxide hollow sphere-based sensor shows high sensitivity (6.5 ppb detection limit) and selectivity toward formaldehyde, and extremely fast response (1.8 s) and recovery (5.4 s) times. This flexible and scalable method can be used to fabricate high performance miniaturized gas sensors with a variety of hollow nanostructured metal oxides for a range of applications, including combining multiple metal oxides for superior sensitivity and tunable selectivity

    Selective Ultrathin Carbon Sheath on Porous Silicon Nanowires: Materials for Extremely High Energy Density Planar Micro-Supercapacitors

    No full text
    Microsupercapacitors are attractive energy storage devices for integration with autonomous microsensor networks due to their high-power capabilities and robust cycle lifetimes. Here, we demonstrate porous silicon nanowires synthesized via a lithography compatible low-temperature wet etch and encapsulated in an ultrathin graphitic carbon sheath, as electrochemical double layer capacitor electrodes. Specific capacitance values reaching 325 mF cm<sup>–2</sup> are achieved, representing the highest specific ECDL capacitance for planar microsupercapacitor electrode materials to date

    Templated 3D Ultrathin CVD Graphite Networks with Controllable Geometry: Synthesis and Application As Supercapacitor Electrodes

    No full text
    Three-dimensional ultrathin graphitic foams are grown via chemical vapor deposition on templated Ni scaffolds, which are electrodeposited on a close-packed array of polystyrene microspheres. After removal of the Ni, free-standing foams composed of conjoined hollow ultrathin graphite spheres are obtained. Control over the pore size and foam thickness is demonstrated. The graphitic foam is tested as a supercapacitor electrode, exhibiting electrochemical double-layer capacitance values that compare well to those obtained with the state-of-the-art 3D graphene materials

    Direct Organization of Morphology-Controllable Mesoporous SnO<sub>2</sub> Using Amphiphilic Graft Copolymer for Gas-Sensing Applications

    No full text
    A simple and flexible strategy for controlled synthesis of mesoporous metal oxide films using an amphiphilic graft copolymer as sacrificial template is presented and the effectiveness of this approach for gas-sensing applications is reported. The amphiphilic graft copolymer poly­(vinyl chloride)-<i>g</i>-poly­(oxyethylene methacrylate) (PVC-<i>g</i>-POEM) is used as a sacrificial template for the direct synthesis of mesoporous SnO<sub>2</sub>. The graft copolymer self-assembly is shown to enable good control over the morphology of the resulting SnO<sub>2</sub> layer. Using this approach, mesoporous SnO<sub>2</sub> based sensors with varied porosity are fabricated in situ on a microheater platform. This method reduces the interfacial contact resistance between the chemically sensitive materials and the microheater, while a simple fabrication process is provided. The sensors show significantly different gas-sensing performances depending on the SnO<sub>2</sub> porosity, with the highly mesoporous SnO<sub>2</sub> sensor exhibiting high sensitivity, low detection limit, and fast response and recovery toward hydrogen gas. This printable solution-based method can be used reproducibly to fabricate a variety of mesoporous metal oxide layers with tunable morphologies on various substrates for high-performance applications

    Air-Stable n‑Doping of WSe<sub>2</sub> by Anion Vacancy Formation with Mild Plasma Treatment

    No full text
    Transition metal dichalcogenides (TMDCs) have been extensively explored for applications in electronic and optoelectronic devices due to their unique material properties. However, the presence of large contact resistances is still a fundamental challenge in the field. In this work, we study defect engineering by using a mild plasma treatment (He or H<sub>2</sub>) as an approach to reduce the contact resistance to WSe<sub>2</sub>. Material characterization by X-ray photoelectron spectroscopy, photoluminescence, and Kelvin probe force microscopy confirm defect-induced n-doping, up to degenerate level, which is attributed to the creation of anion (Se) vacancies. The plasma treatment is adopted in the fabrication process flow of WSe<sub>2</sub> n-type metal-oxide–semiconductor field-effect transistors to selectively create anion vacancies at the metal contact regions. Due to lowering the metal contact resistance, improvements in the device performance metrics such as a 20× improvement in ON current and a nearly ideal subthreshold swing value of 66 mV/dec are observed. This work demonstrates that defect engineering at the contact regions can be utilized as a reliable scheme to realize high-performance electronic and optoelectronic TMDC devices

    In Situ Localized Growth of Porous Tin Oxide Films on Low Power Microheater Platform for Low Temperature CO Detection

    No full text
    This paper reports a facile method for creating a nanostructured metal oxide film on a low power microheater sensor platform and the direct realization of this structure as a gas sensor. By fast annealing the deposited liquid precursors with the microheater, a highly porous, nanocrystalline metal oxide film can be generated in situ and locally on the sensor platform. With only minimal processing, a high performance, miniaturized gas sensor is ready for use. A carbon monoxide sensor using the in situ synthesized porous tin oxide (SnO<sub>2</sub>) sensing film is made as a demonstration of this technique. The sensor exhibits a low detection limit and fast response and recovery time at a low operating temperature. This facile fabrication method is highly flexible and has great potential for large-scale gas sensor fabrication

    Programming Nanoparticles in Multiscale: Optically Modulated Assembly and Phase Switching of Silicon Nanoparticle Array

    No full text
    Manipulating and tuning nanoparticles by means of optical field interactions is of key interest for nanoscience and applications in electronics and photonics. We report scalable, direct, and optically modulated writing of nanoparticle patterns (size, number, and location) of high precision using a pulsed nanosecond laser. The complex nanoparticle arrangement is modulated by the laser pulse energy and polarization with the particle size ranging from 60 to 330 nm. Furthermore, we report fast cooling-rate induced phase switching of crystalline Si nanoparticles to the amorphous state. Such phase switching has usually been observed in compound phase change materials like GeSbTe. The ensuing modification of atomic structure leads to dielectric constant switching. Based on these effects, a multiscale laser-assisted method of fabricating Mie resonator arrays is proposed. The number of Mie resonators, as well as the resonance peaks and dielectric constants of selected resonators, can be programmed. The programmable light-matter interaction serves as a mechanism to fabricate optical metasurfaces, structural color, and multidimensional optical storage devices
    corecore