79 research outputs found
Diameter and Chirality Dependence of Exciton Properties in Carbon Nanotubes
We calculate the diameter and chirality dependences of the binding energies,
sizes, and bright-dark splittings of excitons in semiconducting single-wall
carbon nanotubes (SWNTs). Using results and insights from {\it ab initio}
calculations, we employ a symmetry-based, variational method based on the
effective-mass and envelope-function approximations using tight-binding
wavefunctions. Binding energies and spatial extents show a leading dependence
with diameter as and , respectively, with chirality corrections
providing a spread of roughly 20% with a strong family behavior. Bright-dark
exciton splittings show a leading dependence. We provide analytical
expressions for the binding energies, sizes, and splittings that should be
useful to guide future experiments
Electric Field Control of Shallow Donor Impurities in Silicon
We present a tight-binding study of donor impurities in Si, demonstrating the
adequacy of this approach for this problem by comparison with effective mass
theory and experimental results. We consider the response of the system to an
applied electric field: donors near a barrier material and in the presence of
an uniform electric field may undergo two different ionization regimes
according to the distance of the impurity to the Si/barrier interface. We show
that for impurities ~ 5 nm below the barrier, adiabatic ionization is possible
within switching times of the order of one picosecond, while for impurities ~
10 nm or more below the barrier, no adiabatic ionization may be carried out by
an external uniform electric field. Our results are discussed in connection
with proposed Si:P quantum computer architectures.Comment: 18 pages, 6 figures, submitted to PR
Selection Rules for One- and Two-Photon Absorption by Excitons in Carbon Nanotubes
Recent optical absorption/emission experiments showed that the lower energy
optical transitions in carbon nanotubes are excitonic in nature, as predicted
by theory. These experiments were based on the symmetry aspects of free
electron-hole states and bound excitonic states. The present work shows,
however, that group theory does not predict the selection rules needed to
explain the two photon experiments. We obtain the symmetries and selection
rules for the optical transitions of excitons in single-wall carbon nanotubes
within the approach of the group of the wavevector, thus providing important
information for the interpretation of theoretical and experimental optical
spectra of these materials.Comment: 4 pages, 1 figure, 1 tabl
Intersubband decay of 1-D exciton resonances in carbon nanotubes
We have studied intersubband decay of E22 excitons in semiconducting carbon
nanotubes experimentally and theoretically. Photoluminescence excitation line
widths of semiconducting nanotubes with chiral indicess (n, m) can be mapped
onto a connectivity grid with curves of constant (n-m) and (2n+m). Moreover,
the global behavior of E22 linewidths is best characterized by a strong
increase with energy irrespective of their (n-m) mod(3)= \pm 1 family
affiliation. Solution of the Bethe-Salpeter equations shows that the E22
linewidths are dominated by phonon assisted coupling to higher momentum states
of the E11 and E12 exciton bands. The calculations also suggest that the
branching ratio for decay into exciton bands vs free carrier bands,
respectively is about 10:1.Comment: 4 pages, 4 figure
Tight-binding study of the influence of the strain on the electronic properties of InAs/GaAs quantum dots
We present an atomistic investigation of the influence of strain on the
electronic properties of quantum dots (QD's) within the empirical tight-binding (ETB) model with interactions up to 2nd nearest neighbors
and spin-orbit coupling. Results for the model system of capped pyramid-shaped
InAs QD's in GaAs, with supercells containing atoms are presented and
compared with previous empirical pseudopotential results. The good agreement
shows that ETB is a reliable alternative for an atomistic treatment. The strain
is incorporated through the atomistic valence force field model. The ETB
treatment allows for the effects of bond length and bond angle deviations from
the ideal InAs and GaAs zincblende structure to be selectively removed from the
electronic-structure calculation, giving quantitative information on the
importance of strain effects on the bound state energies and on the physical
origin of the spatial elongation of the wave functions. Effects of dot-dot
coupling have also been examined to determine the relative weight of both
strain field and wave function overlap.Comment: 22 pages, 7 figures, submitted to Phys. Rev. B (in press) In the
latest version, added Figs. 3 and 4, modified Fig. 5, Tables I and II,.and
added new reference
Electronic and structural properties of vacancies on and below the GaP(110) surface
We have performed total-energy density-functional calculations using
first-principles pseudopotentials to determine the atomic and electronic
structure of neutral surface and subsurface vacancies at the GaP(110) surface.
The cation as well as the anion surface vacancy show a pronounced inward
relaxation of the three nearest neighbor atoms towards the vacancy while the
surface point-group symmetry is maintained. For both types of vacancies we find
a singly occupied level at mid gap. Subsurface vacancies below the second layer
display essentially the same properties as bulk defects. Our results for
vacancies in the second layer show features not observed for either surface or
bulk vacancies: Large relaxations occur and both defects are unstable against
the formation of antisite vacancy complexes. Simulating scanning tunneling
microscope pictures of the different vacancies we find excellent agreement with
experimental data for the surface vacancies and predict the signatures of
subsurface vacancies.Comment: 10 pages, 6 figures, Submitted to Phys. Rev. B, Other related
publications can be found at http://www.rz-berlin.mpg.de/th/paper.htm
Resonance Raman spectroscopy (n,m)-dependent effects in small-diameter single-wall carbon nanotubes
Silicon-based spin and charge quantum computation
Silicon-based quantum-computer architectures have attracted attention because
of their promise for scalability and their potential for synergetically
utilizing the available resources associated with the existing Si technology
infrastructure. Electronic and nuclear spins of shallow donors (e.g.
phosphorus) in Si are ideal candidates for qubits in such proposals due to the
relatively long spin coherence times. For these spin qubits, donor electron
charge manipulation by external gates is a key ingredient for control and
read-out of single-qubit operations, while shallow donor exchange gates are
frequently invoked to perform two-qubit operations. More recently, charge
qubits based on tunnel coupling in P substitutional molecular ions in Si
have also been proposed. We discuss the feasibility of the building blocks
involved in shallow donor quantum computation in silicon, taking into account
the peculiarities of silicon electronic structure, in particular the six
degenerate states at the conduction band edge. We show that quantum
interference among these states does not significantly affect operations
involving a single donor, but leads to fast oscillations in electron exchange
coupling and on tunnel-coupling strength when the donor pair relative position
is changed on a lattice-parameter scale. These studies illustrate the
considerable potential as well as the tremendous challenges posed by donor spin
and charge as candidates for qubits in silicon.Comment: Review paper (invited) - to appear in Annals of the Brazilian Academy
of Science
- …