Angiogenesis in urinary bladder carcinoma as defined by microvessel density (MVD) after immunohistochemical staining for Factor VIII and CD31

Background: Among the patients with bladder cancer, a group is still at risk of disease recurrence, progression, and death from their cancer after curative treatment. Angiogenesis is a crucial pathogenic mechanism for this type of urothelial carcinoma and is a potential therapeutic target. Objectives: To quantify tumor angiogenesis in bladder cancer and determine whether it correlates with tumor stage and grade. Patients and methods: A series of 42 archival samples from carcinomas of the urinary bladder were graded, staged, and analyzed for microvessel density (MVD) by a double immunohistochemical technique using Factor VIII (FVIII) and CD31 antibodies. The correlation between MVD and histopathological grade and tumor stage was evaluated. Results: FVIII and CD31 immunoreactivity was observed in 100% of cases and more intensely with CD31. Significantly higher MVD was determined in invasive tumors than in superficial tumors (p<0.05). MVD increased with tumor grade and stage (p<0.05); MVD was not affected by age or sex of the patients. Conclusion: These data demonstrate that MVD in bladder carcinoma correlates with the tumor grade and stage. Quantification of tumor angiogenesis may allow selection of the type of treatment for bladder cancer patients

Tunable External Cavity Semiconductor Lasers.

In this study, we propose a new method to tune the semiconductor laser lasing frequency and reducing the laser linewidth using an external deriving field. We redeveloped Floquet S-matrix which determines the transmission probabilities and the shape and position of the induced quasibound state, which accumulated incident electrons. We explored the S-matrix numerically for various system parameters. We found that the oscillating field amplitude V1 plays a curial rule in defining the profile of electrons accumulations in the quasibound state and the field’s strength made sift the position of the quasibound state. This sift in the bound state energy due field’s strength is used to tune the lasing frequency and the output of the semiconductor laser linewidth is improved by changing the field’s amplitude the deriving field. By narrowing down the electron accumulations profile the laser linewidth would be narrower