Carrier dynamics in ion-implanted GaAs studied by simulation and observation of terahertz emission

We have studied terahertz (THz) emission from arsenic-ion implanted GaAs both experimentally and using a three-dimensional carrier dynamics simulation. A uniform density of vacancies was formed over the optical absorption depth of bulk GaAs samples by performing multi-energy implantations of arsenic ions (1 and 2.4MeV) and subsequent thermal annealing. In a series of THz emission experiments the frequency of peak THz power was found to increase significantly from 1.4 to 2.2THz when the ion implantation dose was increased from 10^13 to 10^16 cm-3. We used a semi-classical Monte-Carlo simulation of ultra-fast carrier dynamics to reproduce and explain these results. The effect of the ion-induced damage was included in the simulation by considering carrier scattering at neutral and charged impurities, as well as carrier trapping at defect sites. Higher vacancy concentrations and shorter carrier trapping times both contributed to shorter simulated THz pulses, the latter being more important over experimentally realistic parameter ranges.Comment: 6 pages, 7 figure

Three-dimensional carrier-dynamics simulation of terahertz emission from photoconductive switches

A semi-classical Monte Carlo model for studying three-dimensional carrier dynamics in photoconductive switches is presented. The model was used to simulate the process of photoexcitation in GaAs-based photoconductive antennas illuminated with pulses typical of mode-locked Ti:Sapphire lasers. We analyzed the power and frequency bandwidth of THz radiation emitted from these devices as a function of bias voltage, pump pulse duration and pump pulse location. We show that the mechanisms limiting the THz power emitted from photoconductive switches fall into two regimes: when illuminated with short duration (<40 fs) laser pulses the energy distribution of the Gaussian pulses constrains the emitted power, while for long (>40 fs) pulses, screening is the primary power-limiting mechanism. A discussion of the dynamics of bias field screening in the gap region is presented. The emitted terahertz power was found to be enhanced when the exciting laser pulse was in close proximity to the anode of the photoconductive emitter, in agreement with experimental results. We show that this enhancement arises from the electric field distribution within the emitter combined with a difference in the mobilities of electrons and holes.Comment: 7 pages, 7 figure

Charge trapping in polymer transistors probed by terahertz spectroscopy and scanning probe potentiometry

Terahertz time-domain spectroscopy and scanning probe potentiometry were used to investigate charge trapping in polymer field-effect transistors fabricated on a silicon gate. The hole density in the transistor channel was determined from the reduction in the transmitted terahertz radiation under an applied gate voltage. Prolonged device operation creates an exponential decay in the differential terahertz transmission, compatible with an increase in the density of trapped holes in the polymer channel. Taken in combination with scanning probe potentionmetry measurements, these results indicate that device degradation is largely a consequence of hole trapping, rather than of changes to the mobility of free holes in the polymer.Comment: 4 pages, 3 figure

Polarisation-sensitive terahertz detection by multicontact photoconductive receivers

We have developed a terahertz radiation detector that measures both the amplitude and polarization of the electric field as a function of time. The device is a three-contact photoconductive receiver designed so that two orthogonal electric-field components of an arbitrary polarized electromagnetic wave may be detected simultaneously. The detector was fabricated on Fe+ ion-implanted InP. Polarization-sensitive detection is demonstrated with an extinction ratio better than 100:1. This type of device will have immediate application in studies of birefringent and optically active materials in the far-infrared region of the spectrum.Comment: 3 pages, 3 figure

Spectral fluctuations of Schr\"odinger operators generated by critical points of the potential

Starting from the spectrum of Schr\"odinger operators on $\mathbb{R}^n$, we propose a method to detect critical points of the potential. We argue semi-classically on the basis of a mathematically rigorous version of Gutzwiller's trace formula which expresses spectral statistics in term of classical orbits. A critical point of the potential with zero momentum is an equilibrium of the flow and generates certain singularities in the spectrum. Via sharp spectral estimates, this fluctuation indicates the presence of a critical point and allows to reconstruct partially the local shape of the potential. Some generalizations of this approach are also proposed.\medskip keywords : Semi-classical analysis; Schr\"odinger operators; Equilibriums in classical mechanics.Comment: 18 pages, Final versio

The Diabolo photometer and the future of ground-based millimetric bolometer devices

The millimetric atmospheric windows at 1 and 2 mm are interesting targets for cosmological studies. Two broad areas appear leading this field: 1) the search for high redshift star-forming galaxies and 2) the measurement of Sunyaev-Zel'dovich (SZ) effect in clusters of galaxies at all redshifts. The Diabolo photometer is a dual-channel photometer working at 1.2 and 2.1 mm and dedicated to high angular resolution measurements of the Sunyaev--Zel'dovich effect towards distant clusters. It uses 2 by 3 bolometers cooled down to 0.1 K with a compact open dilution cryostat. The high resolution is provided by the IRAM 30 m telescope. The result of several Winter campaigns are reported here, including the first millimetric map of the SZ effect that was obtained by Pointecouteau et al. (2001) on RXJ1347-1145, the non-detection of a millimetric counterpart to the radio decrement towards PC1643+4631 and 2 mm number count upper limits. We discuss limitations in ground-based single-dish millimetre observations, namely sky noise and the number of detectors. We advocate the use of fully sampled arrays of (100 to 1000) bolometers as a big step forward in the millimetre continuum science. Efforts in France are briefly mentionned.Comment: 7 pages, 6 figures, to appear in the Proceedings of the 2K1BC ``Experimental Astronomy at millimeter wavelengths'', Breuil-Cervinia (AO) Italy - July 9 - 13, 2001, Eds. M. De Petris et a

Influence of surface passivation on ultrafast carrier dynamics and terahertz radiation generation in GaAs

The carrier dynamics of photoexcited electrons in the vicinity of the surface of (NH4)2S-passivated GaAs were studied via terahertz (THz) emission spectroscopy and optical-pump THz-probe spectroscopy. THz emission spectroscopy measurements, coupled with Monte Carlo simulations of THz emission, revealed that the surface electric field of GaAs reverses after passivation. The conductivity of photoexcited electrons was determined via optical-pump THz-probe spectroscopy, and was found to double after passivation. These experiments demonstrate that passivation significantly reduces the surface state density and surface recombination velocity of GaAs. Finally, we have demonstrated that passivation leads to an enhancement in the power radiated by photoconductive switch THz emitters, thereby showing the important influence of surface chemistry on the performance of ultrafast THz photonic devices.Comment: 4 pages, 3 figures, to appear in Applied Physics Letter

Factors associated with repetitive violent behavior of psychiatric inpatients.

A small number of psychiatric inpatients displays a large proportion of Violent Behaviors (VB). These can have a major impact on both victims and patients themselves. This study explored personal, situational and institutional risk factors and their combined effects, which could lead to repetitive VB (three or more assaults). Data from 4518 patients, aged 18 to 65, admitted to an acute psychiatric care facility, were included in the analysis. VB, defined as physical aggressions against another person, were assessed by the Staff Observation Aggression Scale-Revised. 414 VB were reported during the study period, involving 199 patients. 0.75 % of all patients were repetitively violent and committed 43% of all VB. Factors that were linked to repetitive VB were living in sheltered housing before hospitalization, suffering from schizophrenia with substance abuse comorbidity, cumulating hospitalization days and some situational factors, like the fact of being in nursing offices and pharmacies. When all personal, situational and institutional factors were considered together, the combined effects of length of stay and living in sheltered housing increased the risk of repetitive VB. We have identified a small group of vulnerable patients for whom new modalities of inter-institutional networking should be developed to prevent repetitive VB

Evolution of dopant-induced helium nanoplasmas

Two-component nanoplasmas generated by strong-field ionization of doped helium nanodroplets are studied in a pump-probe experiment using few-cycle laser pulses in combination with molecular dynamics simulations. High yields of helium ions and a pronounced, droplet size-dependent resonance structure in the pump-probe transients reveal the evolution of the dopant-induced helium nanoplasma. The pump-probe dynamics is interpreted in terms of strong inner ionization by the pump pulse and resonant heating by the probe pulse which controls the final charge states detected via the frustration of electron-ion recombination