Expériences des publics du Quai

Rapport d\u27étude pour Le Quai Forum des Arts Vivants (Angers), portant sur le rôle du lieu culturel dans l\u27expérience vécue par les publics

Scène/hors scène : le rapport des publics aux lieux de diffusion de spectacle vivant

Scène/hors scène : le rapport des publics aux lieux de diffusion de spectacle vivant

Carrier dynamics in ion-implanted GaAs studied by simulation and observation of terahertz emission

We have studied terahertz (THz) emission from arsenic-ion implanted GaAs both experimentally and using a three-dimensional carrier dynamics simulation. A uniform density of vacancies was formed over the optical absorption depth of bulk GaAs samples by performing multi-energy implantations of arsenic ions (1 and 2.4MeV) and subsequent thermal annealing. In a series of THz emission experiments the frequency of peak THz power was found to increase significantly from 1.4 to 2.2THz when the ion implantation dose was increased from 10^13 to 10^16 cm-3. We used a semi-classical Monte-Carlo simulation of ultra-fast carrier dynamics to reproduce and explain these results. The effect of the ion-induced damage was included in the simulation by considering carrier scattering at neutral and charged impurities, as well as carrier trapping at defect sites. Higher vacancy concentrations and shorter carrier trapping times both contributed to shorter simulated THz pulses, the latter being more important over experimentally realistic parameter ranges.Comment: 6 pages, 7 figure

Polarization-dependence of anomalous scattering in brominated DNA and RNA molecules, and importance of crystal orientation in single- and multiple-wavelength anomalous diffraction phasing

In this paper the anisotropy of anomalous scattering at the Br K-absorption edge in brominated nucleotides is investigated, and it is shown that this effect can give rise to a marked directional dependence of the anomalous signal strength in X-ray diffraction data. This implies that choosing the correct orientation for crystals of such molecules can be a crucial determinant of success or failure when using single- and multiple-wavelength anomalous diffraction (SAD or MAD) methods to solve their structure. In particular, polarized absorption spectra on an oriented crystal of a brominated DNA molecule were measured, and were used to determine the orientation that yields a maximum anomalous signal in the diffraction data. Out of several SAD data sets, only those collected at or near that optimal orientation allowed interpretable electron density maps to be obtained. The findings of this study have implications for instrumental choices in experimental stations at synchrotron beamlines, as well as for the development of data collection strategy programs

Atypical hepatic vacuolated cell lesion in the white perch \u3cem\u3eMorone americana\u3c/em\u3e

This report details histopathological findings of atypical vacuolated hepatocytes in the white perch Morone americana. Vacuolated cell lesions have been reported from a number of species in association with degraded habitats, often in the presence of hepatic neoplasms. Extensive atypical vacuolated cell lesions assuming characteristic acinar or ductular configurations have been reported previously only from the winter flounder Pseudopleuronectes americanus. Light microscopic findings, utilizing a variety of histochemical stains, suggest the identical nature of this lesion to that of winter flounder. The discovery of this lesion in a free-swimming species, feeding throughout the water column, is in direct contrast to that of the bottom dwelling pleuronectid, feeding from and constantly in contact with potentially contaminated sediments. While the winter flounder has become the sentinel fish species for pollution monitoring on the northeast coast, increased surveillance of other species may prove atypical vacuolated cell lesions represent a common mechanism of chronic cellular injury in relation to impacted environments

Polarisation-sensitive terahertz detection by multicontact photoconductive receivers

We have developed a terahertz radiation detector that measures both the amplitude and polarization of the electric field as a function of time. The device is a three-contact photoconductive receiver designed so that two orthogonal electric-field components of an arbitrary polarized electromagnetic wave may be detected simultaneously. The detector was fabricated on Fe+ ion-implanted InP. Polarization-sensitive detection is demonstrated with an extinction ratio better than 100:1. This type of device will have immediate application in studies of birefringent and optically active materials in the far-infrared region of the spectrum.Comment: 3 pages, 3 figure

Fundamental solutions for semidiscrete evolution equations via Banach algebras

We give representations for solutions of time-fractional differential equations that involve operators on Lebesgue spaces of sequences defined by discrete convolutions involving kernels through the discrete Fourier transform. We consider finite difference operators of first and second orders, which are generators of uniformly continuous semigroups and cosine functions. We present the linear and algebraic structures (in particular, factorization properties) and their norms and spectra in the Lebesgue space of summable sequences. We identify fractional powers of these generators and apply to them the subordination principle. We also give some applications and consequences of our results

Influence of surface passivation on ultrafast carrier dynamics and terahertz radiation generation in GaAs

The carrier dynamics of photoexcited electrons in the vicinity of the surface of (NH4)2S-passivated GaAs were studied via terahertz (THz) emission spectroscopy and optical-pump THz-probe spectroscopy. THz emission spectroscopy measurements, coupled with Monte Carlo simulations of THz emission, revealed that the surface electric field of GaAs reverses after passivation. The conductivity of photoexcited electrons was determined via optical-pump THz-probe spectroscopy, and was found to double after passivation. These experiments demonstrate that passivation significantly reduces the surface state density and surface recombination velocity of GaAs. Finally, we have demonstrated that passivation leads to an enhancement in the power radiated by photoconductive switch THz emitters, thereby showing the important influence of surface chemistry on the performance of ultrafast THz photonic devices.Comment: 4 pages, 3 figures, to appear in Applied Physics Letter