The Challenges of Organizational Factors in Collaborative Artificial Intelligence Projects

Despite the current popularity of AI and a steady increase in publications over time, few studies have investigated artificial intelligence (AI) in public contexts. As a result, assumptions about the drivers, challenges, and impacts of AI in government are far from conclusive. By using a case study that involves a large research university in England and two different county councils in a multi-year collaborative project around AI, we study the challenges that interorganizational collaborations face in adopting AI tools and implementing organizational routines to address them. Our findings reveal the most important challenges facing such collaborations: a resistance to sharing data, due to privacy and security concerns; insufficient understanding of the required and available data; a lack of alignment between project interests and expectations around data sharing; and a lack of engagement across organizational hierarchy. Organizational routines capable of overcoming such challenges include working on-site, presenting the benefits of data sharing, re-framing problems, designating joint appointments and boundary spanners, and connecting participants in the collaboration at all levels around project design and purpose

Reorientation Transition in Single-Domain (Ga,Mn)As

We demonstrate that the interplay of in-plane biaxial and uniaxial anisotropy fields in (Ga,Mn)As results in a magnetization reorientation transition and an anisotropic AC susceptibility which is fully consistent with a simple single domain model. The uniaxial and biaxial anisotropy constants vary respectively as the square and fourth power of the spontaneous magnetization across the whole temperature range up to T_C. The weakening of the anisotropy at the transition may be of technological importance for applications involving thermally-assisted magnetization switching.Comment: 4 pages, 4 figure

Optical orientation of spins in GaAs:Mn/AlGaAs quantum wells via impurity-to-band excitation

The paper reports optical orientation experiments performed in the narrow GaAs/AlGaAs quantum wells doped with Mn. We experimentally demonstrate a control over the spin polarization by means of the optical orientation via the impurity-to-band excitation and observe a sign inversion of the luminescence polarization depending on the pump power. The g factor of a hole localized on the Mn acceptor in the quantum well was also found to be considerably modified from its bulk value due to the quantum confinement effect. This finding shows the importance of the local environment on magnetic properties of the dopants in semiconductor nanostructures

Strain dependence of the Mn anisotropy in ferromagnetic semiconductors observed by x-ray magnetic circular dichroism

We demonstrate sensitivity of the Mn 3d valence states to strain in the ferromagnetic semiconductors (Ga,Mn)As and (Al,Ga,Mn)As, using x-ray magnetic circular dichroism (XMCD). The spectral shape of the Mn $L_{2,3}$ XMCD is dependent on the orientation of the magnetization, and features with cubic and uniaxial dependence are distinguished. Reversing the strain reverses the sign of the uniaxial anisotropy of the Mn $L_3$ pre-peak which is ascribed to transitions from the Mn 2p core level to p-d hybridized valence band hole states. With increasing carrier localization, the $L_3$ pre-peak intensity increases, indicating an increasing 3d character of the hybridized holes.Comment: 4 pages plus 2 figures, accepted for publication in Physical Review

Search For Hole Mediated Ferromagnetism In Cubic (Ga,Mn)N

Results of magnetisation measurements on p-type zincblende-(Ga,Mn)N are reported. In addition to a small high temperature ferromagnetic signal, we detect ferromagnetic correlation among the remaining Mn ions, which we assign to the onset of hole-mediated ferromagnetism in (Ga,Mn)N.Comment: 2 pages, 1 figure, proc. ICPS 27, Flagstaff '0

Surface morphology and magnetic anisotropy in (Ga,Mn)As

Atomic Force Microscopy and Grazing incidence X-ray diffraction measurements have revealed the presence of ripples aligned along the $[1\bar{1}0]$ direction on the surface of (Ga,Mn)As layers grown on GaAs(001) substrates and buffer layers, with periodicity of about 50 nm in all samples that have been studied. These samples show the strong symmetry breaking uniaxial magnetic anisotropy normally observed in such materials. We observe a clear correlation between the amplitude of the surface ripples and the strength of the uniaxial magnetic anisotropy component suggesting that these ripples might be the source of such anisotropy.Comment: 3 pages, 4 figures, 1 table. Replaced with published versio